doped crystal 中文意思是什麼
doped crystal
解釋
摻雜的晶體-
Preferred growth of nanosized crystal silicon in doped hydrogenated nanocrystalline silicon film
薄膜中納米硅晶粒的擇優生長 -
Processing and growth mechanism of al - doped rutile single crystal by flame fusion method
單晶體焰熔法生長實驗及機理 -
It is shown that with increasing doped value x, structures of the crystals change its low symmetry into high symmetry and doping with praseodymium can induce larger crystal structure distortion than other elements
發現塊材樣品隨摻雜量x增加，晶體結構由低對稱向高對稱性轉變。通過摻雜pr元素可以引起晶格較大畸變。 -
We have found the best ways to optimize the growth of quality zno films and got highly c - axis oriented zno films. the microstructures of the films were observed by afm. after analyzing the crystal structures, the crystal tropism and the surface conformation flatness, we found the result that the substrate temperature of 400 ? is ideal for silicon substrates, which conforms to the result of the structure analyse. by analyzing the magnetism of zno films, we found that the films appropriately doped with fe, co ions have magnetism at room temperature and their magnetism can be improved by doping other little cu ion, but it is not certain that the content of cu is higher, the film has more magnetism, so it has the best content of cu. moreover, the films which have best crystal structures may not have the best magnetism
我們採用原子力顯微鏡（ afm ）方法觀察薄膜的顯微結構，利用所得的圖象信息對薄膜的晶粒結構、晶粒取向、表面形態平整度等進行分析討論，認為400的襯底溫度對硅襯底薄膜是合適的，與結構分析的結果一致。通過對薄膜磁性能的分析和研究，我們得出一些有意義的結果：適量過渡金屬離子fe 、 co摻雜的zno薄膜，在室溫下具有鐵磁性，而在此基礎上摻入少量的cu離子能改善薄膜的磁性。摻cu量有個最佳值，而且結構最好的薄膜磁性不一定最好。 -
In this paper, pure and doped ktp crystals were grown from the flux using a top - seeded method, and special technique have been used to lower the electrical conductivity to three orders of magnitude than common flux ktp, the values is up to 10 - 10 ( cm ) - 1, this overcame the shortcoming that common flux ktp cannot be used in e - o application field because of having higher electrical conductivity. the growth condition, doped elements and annealing technology were investigated. single crystals of ktp with high quality and big z - cut cross section were obtained by optimizing the parameter of crystal growth
本實驗採用頂部籽晶熔劑法生長了純的以及不同摻雜的ktp晶體，用特殊工藝處理技術將普通熔劑法ktp的電導率降低了三個數量級，達到了10 ~ （ - 10 ） （ cm ） ~ （ - 1 ） ，解決了普通熔劑法ktp晶體由於離子電導率太大而無法用於電光應用領域的困難；對ktp晶體的生長條件、摻雜元素以及退火工藝等進行了研究，通過優化生長工藝技術參數，突破了工藝技術生長難關，得到了高光學均勻性、具有大z切面的ktp單晶。 -
5 ) optical rectification in a set of doped zn0. 95cd0. 05te < 110 > crystals show an increasing efficiency of thz beam generation with the increasing crystal resistivity, but the efficiency saturates and descended when the doped crystal resistivity goes beyond 106 o - m
Teq10單晶，當晶體的電阻率較大時…入0 『 q ， cmx晶體產生的thz輻射信號逐漸增大。當晶體的電阻率p 106qcm時，晶體產生thz輻射的效率達到飽和甚至可能下降。 -
The recent developments in normal spinel limn2o4 were reviewed, in the process of the solid state synthesis, we researched the effect of materials and synthesis temperature on crystal structure and electrochemical performance, which were characterized by dta - tg, sem, xrd as well as electrochemical performance testing. the structure, electrochemical performance and the correlations between them were all discussed in detail for these doped samples
本文在綜述國內外鋰離子電池尖晶石型材料limn _ 2o _ 4研究進展的基礎上，結合dta - tg 、 sem 、 xrd和電化學性能測試等手段，系統研究了固相法制備鋰離子電池正極材料摻鈷錳酸鋰合成原料、合成溫度對所得材料外觀形貌、晶體結構和電化學性能的影響。 -
( 3 ) the free - standing porous silicon films with continuous porous structure were prepared on single crystal silicon wafer by the method of anodic oxidation and electrochemical etching - electropolishing, and firstly used as the anode materials for lithium ion secondary batteries. the capacities of lithium ions storage and the process of charge and discharge of this nano - silicon anode materials as well as the influence of the structure of ps on behavior of storing lithium ions were inspected at length. on the other hand, through the process of charge and discharge in cells, the lithium of light metal element could be electrochemically doped into ps at different doping levels
胡勁松河北師死大學碩士學位論文（ 3 ）利用陽極氧化法在單晶硅基底上制備了多孔硅自支撐膜，並首次將這種具有連續多孔結構的硅材料用作了理離子電池的陽極材料，考察了這種納米級硅陽極的儲鉀性能和充放電過程，分析了材料結構對其儲理行為的影響；另一方面，利用這種電池充放電過程在多孔硅中電化學引入了不同點綴程度的輕金屬鉀元素，考察了鉀點綴對多孔硅自身結構，及至性質所帶來的影響，提供了一種通過電化學方法插入埋離子從而連續調整多孔硅發光性質的有效方法。 -
The crystal phase of as - deposited znte ( znte : cu ) films depends on the cu concentration in znte. znte films with un - doped cu and low cu doped ( 2. 98 % ) show cubic phases with preferred orientation of ( 111 ). heavily cu - doped films exhibit a mixture of cubic and hexagonal phases
剛沉積的znte （ znte ： cu ）薄膜的晶相結構取決于薄膜中的摻銅濃度，未摻銅和低摻銅（ 2 . 98 ）的薄膜為立方相，重摻銅（ 9 . 9 ）出現六方相和立方相的混合相。 -
After bamgal10o17 doped with sr, ca, the cell volume of each doped phosphors is shrunk and the crystal parameter c is decreased
摻雜少量的sr ， ca后，所得的熒光粉的晶格參數c變小，晶胞體積也隨之變小。 -
The appropriate calcinations temperature is about 700, and the tetragonal sno2 phase crystal structure of the particles remained unchanged when sb was doped to it. as the calcinations temperature increasing and the calcinations time prolong, the size of particles grows and the crystallization tend to be complete. study on the electrical properties of ato powders prepared by hydrothermal synthesis was performed in - depth, the most optimal electrical properties are obtained at doping ratio of 11 percent
水熱法制備的ato納米粉體在熱處理溫度700左右較為適宜，銻的摻雜並未改變粉體的四方相金紅石結構，隨銻摻雜量的增加，粉體的粒度變小；隨熱處理溫度的升高和熱處理時間的延長， ato粉體的粒度增大，晶體結構趨于完整。 -
The seemingly mcnt content in pt can be controlled by repeating the coatings of the film and increasing the mcnt doped concentration of the sol. the heterogeneous nucleation at the interface between mcnt and pt was induced by the doption of mcnt. the films which were calcined at 500 ? had formed perovskite and large crystal content, means that perovskite formed at the lower temperature, in conclusion, the crystalline ability of pt was improved by the doption of tb and mcnt
納米碳管的引入，使得體系在納米碳管和pt之間的界面產生非均態核化，隨pt薄膜成核勢壘的降低，摻納米碳管的pt薄膜在較低溫度下即可形成鈣鈦礦相，在500的較低溫度，就可獲得結晶完整且己具有很大結晶量的薄膜。 -
Sem and tem analysis show that the sample co - doped by nickel and titanium has nano - pellets with morpha like snow and great surface, which the initial discharge capacities in organic electrolyte reached 155. 8mah / g and which were more than theoretic one farad electron discharge capacities ( 148mah / g ). during the charging and discharging cycle, the change rate of the crystal volume was only 0. 233 % and the sample showed long cycle life
樣品在有機電解液的初始電容量（ 155 . 8mah / g ）大於理論1f電子放電容量（ 148mah / g ） ，通過充放電前後xrd衍射圖顯示，放電前後晶胞體積變化僅為0 . 233 ，樣品循環性能好。 -
The rate equations of theb3 + doped crystal laser in cw operation were solved. we analyzed several factorshich influenced the laser output and obtained the optimum value by calculation
建立了摻yb ~ （ 3 + ）晶體激光器的速率方程，對影響連續激光器輸出功率的因素進行了分析，得到了各種優化值。 -
For the substrate of heavily boron doped wafer, it has been proved that oxygen concentration is increased and oxygen precipitation is enhanced by hb ( heavily boron - doping ) during crystal growth, which is beneficial for ig and therefore improve the yield of ulsi
另一方面，在相同的晶體生長條件下，重摻硼硅單晶氧含量升高，氧沉澱被增強，能形成有效吸雜點，提高矽片機械強度，抑制void缺陷，有利於提高ulsi的成品率。 -
Research on gain of doped photonic crystal fiber with raman amplification of soliton
準周期結構一維光子晶體的帶隙特性與濾波特性 -
( 2 ) taking the nonlinear energy transfer property of the photorefractive two - beam coupling in the sbn : 61 crystal doped with 1000ppm cr and the knsbn crystal doped with 0. 07wt % ce, edge - enhancement preprocessing can be achieved, which will results in the larger normalized intensity and narrower width of the correlation peaks. and the discrimination of the jtc is greatly improved
（ 2 ）利用sbn ： 61 ： cr晶體（ 1000ppm ）和knsbn ： ce晶體（ 0 . 07wt ）的二波耦合能量非線性轉移特性，對聯合變換相關器的輸入圖像進行邊緣增強預處理，提高了相關峰的歸一化強度，減小了相關峰的半寬度，從而大大提高了相關器的識別能力。 -
It shows that the interface energy and the heterogeneous nucleation barrier were changed by the doping of tb. so the relationship between crystal content and tb doped concentration can be " described as : y = 1 - exp ( k1 exp ( k cos ( ( x + ) 3 ) it shows that the crystal content will reach a maximum with increasing tb doped concentration because of the influence of heterogeneous nucleation barrier variation
本文在分析界面能的基礎上，推導了在一定條件下薄膜受摻tb影響的鈣鈦礦相析晶含量的理論表達式為： y 1 yxp （ k ； xxp （ kcos （ s ? （ x a ） 』 ）該式表明了受體系成核界面能的變化影響，晶體生長受摻tb濃度影響出現極值。 -
Therefore, it is desirable to investigate and enhance the mechanical property of silicon single crystal. in this paper, the fracture property of czochralshi ( cz ) and nitrogen - doped silicon ( ncz ) were investigated at room temperature by three - point bending method
尤其在當今隨著矽片直徑不斷增大的情況下，提高矽片的機械強度，減少矽片損傷、翹曲、位錯及其滑移等帶來的損失變得十分重要。 -
As is known to all, one of the most important characteristics of sige hbt is the strained sige base growing on the si substrate. generally, the base is required to be very thin so as not to cause the base sige crystal lattice mismatching in subsequent annealing process. also, in order not to increase the thermal noise of device, the base is always heavily doped
眾所周知， sigehbt的主要特點之一就是在si材料襯底上生長的sige材料是應變的，為了在後續的高溫退火工藝中不發生晶格馳豫現象，通常要求器件的基區要做的很薄，同時為了不增加器件的熱噪音，通常sigehbt基區都是高摻雜的。
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