doped silicon 中文意思是什麼
-
Practice for conversion between resistivity and dopant density for boron - doped and phosphorus - doped silicon
摻硼磣磷硅單晶電阻率與摻雜劑濃度換算規程 -
Doped silicon and germanium are technologically the most important types of semiconducting material.
添加硅和鍺在工藝上是半導體物質中最重要的類型。 -
Preferred growth of nanosized crystal silicon in doped hydrogenated nanocrystalline silicon film
薄膜中納米硅晶粒的擇優生長 -
The dependence of oxygen precipitation and induced - defects in heavily as - doped silicon on heat treatment process was studied by annealing and ig process, chemical etching, scanning electron micrograph ( sem ) and transmission electron microscopy ( tem ). a developed ig technique was suggested and the mechanism of the influence of as on oxygen precipitation formation in heavily as - doped silicon was discussed
本文通過化學腐蝕、光學顯微鏡、掃描電鏡（ sem ） 、透射電境（ tem ）等分析技術，對重摻砷硅單晶在單步退火工藝和內吸雜退火工藝中氧沉澱及誘生缺陷的形態，形核與熱處理溫度、時間的關系等進行了研究。 -
It seems the ncz silicon has a higher bdt temperature compared with cz silicon ' s. it is suggested that the elastic effects and the electronic effects of nitrogen doped in silicon made the bdt temperature higher. the observation of fracture surface showed that it was curves at high temperature in brittle fracture, but smooth planes at room temperature
當溫度升高達到硅材料的脆塑轉變時，材料的斷裂強度有個很大的提高，但是首次發現含氮硅單晶卻不明顯，而且摻氮的硅單晶脆塑轉變溫度比普通單晶高，可能是氮的摻入改變了硅材料的內部晶體結構及電子結構。 -
Then, the effect of heavily doped boron on ig of czochralski silicon was also investigated. it is found that no dz ( denuded zones ) were observed in the hb samples subjected to high one - step temperature, ramping annealing respectively. for conventional high - low - high three - step ig annealing, the dz becomes narrower and bmd density is higher in hb samples than that in lb samples, as a result of hb enhancing oxygen precipitation
結果顯示，單步高溫熱處理時重摻硼樣品不能形成潔凈區；降溫退火中，降溫速度較為緩慢（ 3 / min ）時能生成一定量的氧沉澱，但沒有潔凈區形成；普通高?低?高三步熱處理過程中，形成明顯的潔凈區，但相對輕摻樣品而言，潔凈區較窄，氧沉澱密度明顯偏高，說明重摻硼樣品吸雜能力強。 -
We have found the best ways to optimize the growth of quality zno films and got highly c - axis oriented zno films. the microstructures of the films were observed by afm. after analyzing the crystal structures, the crystal tropism and the surface conformation flatness, we found the result that the substrate temperature of 400 ? is ideal for silicon substrates, which conforms to the result of the structure analyse. by analyzing the magnetism of zno films, we found that the films appropriately doped with fe, co ions have magnetism at room temperature and their magnetism can be improved by doping other little cu ion, but it is not certain that the content of cu is higher, the film has more magnetism, so it has the best content of cu. moreover, the films which have best crystal structures may not have the best magnetism
我們採用原子力顯微鏡（ afm ）方法觀察薄膜的顯微結構，利用所得的圖象信息對薄膜的晶粒結構、晶粒取向、表面形態平整度等進行分析討論，認為400的襯底溫度對硅襯底薄膜是合適的，與結構分析的結果一致。通過對薄膜磁性能的分析和研究，我們得出一些有意義的結果：適量過渡金屬離子fe 、 co摻雜的zno薄膜，在室溫下具有鐵磁性，而在此基礎上摻入少量的cu離子能改善薄膜的磁性。摻cu量有個最佳值，而且結構最好的薄膜磁性不一定最好。 -
Surface chemical analysis - secondary ion mass spectrometry - determination of boron atomic concentration in silicon using uniformly doped materials
表面化學分析.次級離子質譜法.利用均勻摻雜材料測定硅中硼原子濃度 -
In this thesis, recent research of the er3 + - doped luminescence materials as well as its applications is reviewed, the main problems in this area are identified, related theories about luminescence of rare earth ions are introduced, and the near infrared and visible luminescen - ce of er3 + - doped borosilicate glasses and silicon oxynitride films have been studied in detailed
本論文主要研究了硼硅酸鹽稀土玻璃和sin _ xo _ y薄膜材料中er ~ （ 3 + ）的可見和近紅外發光的性質，主要內容和得到的結果如下： 1通過變化玻璃的配料組分，合成了含a1和w的硼硅酸鹽玻璃系列樣品。 -
Our requirement of the specification for the crystalline silicon solar battery material is following : silicon doped in all of materials must be not less than 99. 9999 %
大家好！我公司長期采購各類廢硅料，如果您或您的公司有，請聯系我！因為我公司是生產廠家需要長期供貨！謝謝！ -
( 3 ) the free - standing porous silicon films with continuous porous structure were prepared on single crystal silicon wafer by the method of anodic oxidation and electrochemical etching - electropolishing, and firstly used as the anode materials for lithium ion secondary batteries. the capacities of lithium ions storage and the process of charge and discharge of this nano - silicon anode materials as well as the influence of the structure of ps on behavior of storing lithium ions were inspected at length. on the other hand, through the process of charge and discharge in cells, the lithium of light metal element could be electrochemically doped into ps at different doping levels
胡勁松河北師死大學碩士學位論文（ 3 ）利用陽極氧化法在單晶硅基底上制備了多孔硅自支撐膜，並首次將這種具有連續多孔結構的硅材料用作了理離子電池的陽極材料，考察了這種納米級硅陽極的儲鉀性能和充放電過程，分析了材料結構對其儲理行為的影響；另一方面，利用這種電池充放電過程在多孔硅中電化學引入了不同點綴程度的輕金屬鉀元素，考察了鉀點綴對多孔硅自身結構，及至性質所帶來的影響，提供了一種通過電化學方法插入埋離子從而連續調整多孔硅發光性質的有效方法。 -
Boron - doped silicon nanowires grown by plasma - enhanced chemical vapor deposition
等離子體增強化學氣相沉積法實現硅納米線摻硼 -
In the new structure, a n + buffer layer is introduced into the bulk silicon substrate with a triple - diffusion process. the new structure has two features : one is the feature of npt - igbt : the thin and lightly - doped p + layer and the high lifetimes of the carriers ; the other is the feature of pt - igbt : n7n + structure which can make the n " region very thin
新結構用三重擴散的方法在n ~ -單晶片上引入了n ~ +緩沖層，仍然保留了npt - igbt中薄而輕摻雜p層和高載流子壽命的本質優點，同時又具有pt - igbt中n ~ - （ n ~ + ）雙層復合的薄耐壓層（即薄基區）的優點。 -
Effects of germanium on oxygen precipitation in heavily boron - doped czochralski silicon
鍺對重摻硼直拉硅中氧沉澱的影響 -
Heavily as - doped silicon substrates are adopted by many device manufactories because of higher as - doping density. therefore, quantitative determination of oxygen precipitation and induced - defects in heavily as - doped silicon is important to the realization of ig
重摻砷硅襯底片正日益受到器件廠家的青睞，所以研究重摻砷硅單晶中的氧沉澱及誘生缺陷對實現重摻襯底的內吸除有重大意義。 -
Surface chemical analysis - secondary - ion mass spectrometry - determination of boron atomic concentration in silicon using uniformly doped materials
表面化學分析.次級離子質光譜測定法.採用均勻塗料的硅中硼原子濃度測定 -
Investigation on optical properties of p - type lightly doped porous silicon
型輕摻多孔硅的發光特性研究 -
Silicon is doped into the shell - carbon material by coating the graphite with mixture of phenol resin and polysilicone and pyrolyzing at high temperature
將人造石墨、改性石墨、復合炭材料及石墨化mcmb應用於理離子電池。 -
Also, the ncz ( nitrogen doped silicon ), which is my laboratory research characteristic, is research focus at present because it has strong mechanical strength and advantage intrinsic gettering property
同時微氮硅單晶由於其較強的機械強度和內吸雜能力等優點是目前研究的熱點，也是我們實驗室的特色。 -
Therefore, it is desirable to investigate and enhance the mechanical property of silicon single crystal. in this paper, the fracture property of czochralshi ( cz ) and nitrogen - doped silicon ( ncz ) were investigated at room temperature by three - point bending method
尤其在當今隨著矽片直徑不斷增大的情況下，提高矽片的機械強度，減少矽片損傷、翹曲、位錯及其滑移等帶來的損失變得十分重要。
分享友人