doping content 中文意思是什麼
doping content
解釋
摻雜濃度-
The 3d electrons increased with the content of mn doping increasing, and the electrical property increased accordingly as the electron transport path improved. it is confirmed that all the orthorhombic perovskite phase which is formed initially at the heat treatment temperature of about 600c and thoroughly above 850c are observed in the lcmto thin film deposited on si ( 100 ) substrate by rf magneto - controlled sputtering
確認了採用射頻磁控濺射法于si （ 100 ）基板上生長的薄膜至多在600熱處理已開始形成晶相，形成的晶相全部是正交晶系鈣欽礦相，提高熱處理溫度，薄膜中晶相含量相對增大，高於850后晶相基本形成完畢。 -
The other was to research new li - al solid solution alloy material and use it as anode in lithium battery. by the trace alloy component, aluminum, doping in lithium metal, it was hoped to improve the sei film stability of lithium / electrolyte interface and consequentially enhance the performances of lithium anode. meanwhile, different form the previously studied lial alloy that had very high content of aluminum, such alloy should not decrease the mass specific energy and electrochemical potential of lithium electrode
方法二:研究新型鋰鋁固溶體合金材料並將其應用於鋰二次電池中，通過微量合金成份鋁的摻雜提高鋰電極/電解質界面sei膜的穩定性，進而提高鋰負極性能;而該合金不會像以往高鋁含量的鋰鋁合金那樣降低鋰電極的質量比能量和電化學反應電勢。 -
The voltage of lithium - intercalation reaction, impedance and structural stability of intercalation - type cathode material were analysed and calculated. theoritical results show that the reaction voltage depends on the content of lithium and the bond energy, and that the key ways to lower the electrode impedance are to increase the electronic conductivity of the electrode and the diffusion coefficient of lithium ion in the host and to decrease the size of powder. in addition, the thermal stability of lithium - insertion structure can be improved by using crystallographic co - lattice theory and doping treatment
本文從嵌入式陰極材料的嵌鋰反應的電壓、阻抗及結構穩定性的分析和理論計算著手，得到了電壓取決于基體中各種離子間的鍵能及鋰含量、降低電極阻抗的關鍵是提高電子型導電性和li ~ +在基體中的擴散系數及減小粉末粒度的理論依據及其利用晶體的共格原理和摻雜改性的方式來提高材料嵌鋰結構的熱穩定性的設計思路。 -
We have found the best ways to optimize the growth of quality zno films and got highly c - axis oriented zno films. the microstructures of the films were observed by afm. after analyzing the crystal structures, the crystal tropism and the surface conformation flatness, we found the result that the substrate temperature of 400 ? is ideal for silicon substrates, which conforms to the result of the structure analyse. by analyzing the magnetism of zno films, we found that the films appropriately doped with fe, co ions have magnetism at room temperature and their magnetism can be improved by doping other little cu ion, but it is not certain that the content of cu is higher, the film has more magnetism, so it has the best content of cu. moreover, the films which have best crystal structures may not have the best magnetism
我們採用原子力顯微鏡（ afm ）方法觀察薄膜的顯微結構，利用所得的圖象信息對薄膜的晶粒結構、晶粒取向、表面形態平整度等進行分析討論，認為400的襯底溫度對硅襯底薄膜是合適的，與結構分析的結果一致。通過對薄膜磁性能的分析和研究，我們得出一些有意義的結果：適量過渡金屬離子fe 、 co摻雜的zno薄膜，在室溫下具有鐵磁性，而在此基礎上摻入少量的cu離子能改善薄膜的磁性。摻cu量有個最佳值，而且結構最好的薄膜磁性不一定最好。 -
The sol - gel method and solid - state thermal reaction technique were used to prepare the composite oxides with variable lithium content. the doping treatments of some compounds were conducted. dta and tg were used to analyse synthesis mechanism, xrd to analyse phase composition, sem to observe morphology, li - b / licl - kcl / oxide simulated thermal cells to analyse the lithium - intercalation mechanism and properties of cathode material
實驗中採用溶膠?凝膠工藝和固相熱反應技術制取相應的不同鋰含量的復合氧化物，並嘗試對某些化合物進行適當的摻雜處理，應用dta和tg分析合成機制、 xrd分析所得物的物相組成、 sem觀察其形貌，模擬li - b / licl - kcl /氧化物的單體熱電池來分析陰極材料的嵌鋰機制及其電極性質。 -
Influences of the parameters on device performance such as thickness of strained si, ge content, channel doping and thickness of buried oxide are discussed based on given models. the models could be very helpful for device design
根據所建立的模型，針對硅膜厚度、 ge組分、摻雜濃度和埋氧層厚度等參量對薄膜全耗盡型strained - soimosfet器件性能的影響進行詳細討論，為器件結構設計提供了理論基礎。 -
Along with the doping content increases, the dielectric constant initially increased and then decreased. the dielectric loss was on the contrary. 4. bt _ 4 doped with bi _ 2o _ 3 or v2o5 got a lower sintering temperature. a babi4ti4o15 phase raised when bi _ 2o _ 3 was doped and the dielectric properties ruined
3 . bst中摻雜zro _ 2 ，晶粒尺寸增大，摻雜量較大時會產生第二相bazro _ 3 ，介電常數隨摻雜量的增大呈現先增大后減小的趨勢，介電損耗則先減小后增大。 -
Results show that the increase of semiconductor - metal phase transition temperature and the decrease extent of resistance is linear to zr ~ ( 4 + ) doping content, while the hysteresis width of vo _ 2 thin film fluctuates with zr ~ ( 4 + ) doping content
實驗結果表明:隨zr含量的增加， vo _ 2薄膜的半導體-金屬轉變溫度和電阻突變數量級呈線性下降，同時，隨摻雜量的增加， vo _ 2薄膜的熱滯寬度的變化規律是先減小后增大。 -
No second phase exists when bt _ 4 doped with nd and the dielectric properties increased when the doping content is small
Bt _ 4摻雜nd沒有第二相生成且摻雜量較少時能提升樣品的介電性能。 -
It shows that the interface energy and the heterogeneous nucleation barrier were changed by the doping of tb. so the relationship between crystal content and tb doped concentration can be " described as : y = 1 - exp ( k1 exp ( k cos ( ( x + ) 3 ) it shows that the crystal content will reach a maximum with increasing tb doped concentration because of the influence of heterogeneous nucleation barrier variation
本文在分析界面能的基礎上，推導了在一定條件下薄膜受摻tb影響的鈣鈦礦相析晶含量的理論表達式為： y 1 yxp （ k ； xxp （ kcos （ s ? （ x a ） 』 ）該式表明了受體系成核界面能的變化影響，晶體生長受摻tb濃度影響出現極值。 -
There are some creations in this paper. first, the relationship among the physical property, crystal structure, preparation method and doping content is established to be a parabola equation. the extreme value of this equation determines the optimum doping content
本論文工作的創新點在於：從半導體發光材料的晶體結構出發，建立起材料的物理性能、晶體結構中原子配位數、最佳摻雜含量和制備方法之間的關系，歸納出材料摻雜的最佳摻雜含量的理論表達式。 -
Influence of oxygen content and titanium doping on electrochromic properties of wo3 films
3電致變色性能的影響 -
Experiments results were not different. too much doping content will destroy the materials properties
確定最佳摻雜含量是各種電子功能材料科學研究當中最基本的內容之一。 -
The quantitative theory of optimum doping content of electrical film materials was introduced, and an expression was obtained
這一結論是根據現有的初步的試驗結果得出的，關于這一問題，還有待于進一步的深入研究。 -
The problem of optimum doping content must imply some rules undiscovered and the optimum doping content may be a very fundamental problem almost in all the fields of research work for material science
本研究工作對研究發光材料的摻雜改性以及摻雜對材料性能影響的機理認識有著一定的理論意義和實用價值。 -
Second, in luminescence materials hole or electron concentration will change with the doping content. so we expand the hole or electron concentration in taylor expansion and calculat the optimum doping contents. for several semiconductor materials such as zns : mn, silicon doped er and gaas, gap, gan doped different materials, we calculat their optimum doping contents which arc close to some experimental results
應用該表達式，給出了各種不同的制備方法zns摻mn 、硅基摻鉺、以及gaas 、 gap 、 gan摻不同元素制出的發光材料，對最佳摻雜含量進行了理論上的計算，理論計算值與實驗數據相符合。 -
( 2 ) doping a little of ag to tio2 film is good for increasing the content of hydroxy and bridging oxygen on the film surface, and improving the photocatalytic activity and hydrophilicity. but the hydrophilicity decreases as the doping ag increases to a certain content. the surface bridging oxygen has a larger impact on the film hydrophilicity than the hydroxy
3 、在本文所研究的膜材料及膜結構中， tioz / （ tio2一a1203一sno戶復合疊層膜與同等條件下制得的純tio :膜及其它所薄膜相比，既具有高的光催化活性，又具有優良的超親水特性，這是本論文最重要的研究結果。 -
It is concluded that for cvd method the cubic phase content and adhesion are highly effected by the crystal lattice mismatch between c - bn and substrate materials, however, for sputter method the crystal lattice mismatch between c - bn and substrate materials affects the quality of c - bn thin films very little. 5 n - type doping of bn thin films and preparing of bn ( n - type ) / si ( p - type ) heterojunctions adding s into the mixture of argon and nitrogen used as working gas, we sputtered 1ibn target to deposit bn thin films so as to study the n - type doping of bn thin films, and bn ( n - type ) / si ( p - type ) heterojunctions were prepared
5實現了氮化硼薄膜的n型摻雜，成功制備出bn型）乃…型）異質結並且首次系統研究了其卜v和cv特性我們用射頻濺射法濺射六角氨化硼靶，在工作氣體氮和氮中混入s ，沉積氮化硼薄膜，以研究氮化硼薄膜的n型摻雜，並得到bnh型）侶i …型）異質結。
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