doping technology 中文意思是什麼
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In the paper we mainly researched space gainp2 / gaas / ge high efficiency tandem cells " making process by home - made low pressure mocvd technology and new solar concentrators. firstly, we presented reseached and development of solar cells in china and foreign countries ; secondly, on the basis of fundamental priciples and theories, we discussed some factors of influcing conversion efficiency of solar cells, and analysed the i - v output feature of two - junction tandem cells ; then the design concept of gainp2 / gaas / ge two - junction tandem cells was discussed, the detailed aspects of gainp2 / gaas / ge tandem cells epitaxy growth by low pressure mocvd was studied, and some questions on epitaxy growth ( such as crystal qualities, interface stress, element interdiffusion, n - and p - type doping et all ) were solved ; after that, the cell fabrication process was described ; finally, we reseached the hot pressing and mould process technology of an arched line - focus fresnel lens made by pmma, designed and fixed new solar concentrators
本文致力於用自製的低壓mocvd裝置進行cainp _ 2 / gaas / ge空間用高效級聯太陽能電池製作的工藝以及聚光太陽能電池組件的研究。首先，介紹了國內外太陽能電池的研究現狀及應用情況；其次，運用太陽能電池基本原理討論影響電池轉換效率的因素，分析了級聯電池的伏安特性；隨后，討論了cainp _ 2 / gaas / ge雙結級聯電池的結構設計理念，研究了採用低壓mocvd技術生長cainp _ 2 / gaas / ge級聯太陽電池材料的工藝過程，解決了異質材料生長的結晶質量、界面應力、材料互擴散以及材料n 、 p型摻雜等一系列問題；然後總結了級聯電池的后工藝製作；最後，研究了以pmma為材料的菲涅耳線聚焦透鏡的熱壓成型工藝及其模具的加工工藝，設計並安裝完成新型聚光太陽能電池組件。 -
It also put forward that how to select appropriate epilayer doping concentration and thickness, pn junction depth and jte technology to increase the breakdown voltage of 4h - sic mps. a power dissipation model of 4h - sic mps was established
通過對4h - sicmps擊穿特性的二維模擬，提出如何選擇合適的pn結深度、外延層摻雜濃度和厚度以及如何運用jte終端技術來提高擊穿電壓。 -
Semiconductor luminescence materials and devices were developed as one of semiconductor technology in 1960. the luminescence devices made with the materials had developed quickly. but the pure semiconductor materials could not better because the luminescence efficiencies were lower. doping is very important in order to improve the luminescence efficiency
半導體發光材料和器件是六十年代發展起來的半導體技術中的一個分支，單一的純凈本徵半導體的性能往往不能滿足實際的需要，發光效率或發光幾率低，發光強度弱，提高發光效率的有效途徑就是進行材料的摻雜改性。 -
With the development of doping technology, the formation of the base region in high - voltage transistor can be made by b diffusion technology, b - a1 paste - layer diffusion technology, close - tube ga - diffusion technology and open - tube gallium - diffusion technology
隨著摻雜工藝的不斷發展，高反壓晶體管基區的形成經歷了擴硼工藝、硼鋁塗層擴散工藝、閉管擴鎵工藝到開管擴鎵工藝的發展。 -
According to the thickness of the soi film, high voltage ic based on soi material ( soi - hvic ) can be divided into thin - film and thick - film. for thin - film soi - hvic, linear drift region doping profile is adopted to satisfy a certain breakdown - voltage, but this process is too complex and its self - heating effect is obvious ; for thick - film soi - hvic, it can take advantage of cmos technology on silicon to obtain the high voltage
Soi高壓集成電路根據頂層硅厚度可分為厚膜和薄膜兩大類。為了滿足一定的擊穿電壓，薄膜soi高壓電路一般採用漂移區線性摻雜技術，但其工藝復雜，且自熱效應嚴重;而厚膜soi高壓集成電路可以通過移植體硅cmos技術來實現高壓，但是由於其硅膜較厚，介質隔離成為厚膜soi高壓集成電路的關鍵技術。 -
This paper with the actual needs of metal physical doping of icf target material and laser - x - ray conversion material is starting point, major for flow - levitation method principle, technology parameter control particle grain size, structure and thermal stability of phase composition that prep aration metal and alloy nanoparticle go deep into research. the principle of preparation metal nanoparticle by flow - levitation method is difference with other evaporate condensation method
本文以icf靶材料金屬物理摻雜和激光- x光轉換材料的實際需要為出發點，主要對自懸浮定向流技術制備金屬與合金納米微粒的原理、過程和工藝參數控制微粒粒徑大小，所制備納米微粒的結構、物相組成以及組成相的熱穩定性等方面進行了深入研究。 -
Polyaniline ( pan ) have potential applications in technology : such as light - emitting diodes ( led ), sensors, rechargeable batteries, photovoltaic cell, electromagnetic interference shielding and metal anti - corrosion because of their variable structure, varied electronic properties through doping and lightweight
聚苯胺由於具有結構多樣化，通過摻雜電導率可調，重量輕等特點，在發光二極體、傳感器、太陽能電池、二次電池、電磁屏蔽、金屬的防腐等領域呈現廣泛的應用前景。 -
Then we grew the material with different active layer growth temperature, different v / ratio, different doping concentration and form. after that, we tested these materials by photoluminescence ( pl ) technology, and got the best growth condition according to the results of photoluminescence spectra. our result was that the active layer growth temperature was 700, v / ratio was 60, waveguide layer doping was gradual changed ( n - type doping with sih4 from 190sccm to 590sccm, p - type doping with dmzn from 90sccm to 490sccm )
然後在不同的有源區生長溫度、 /比、摻雜方式及濃度情況下對激光器材料進行外延生長，並利用光熒光（ pl ）技術對不同生長條件下外延材料的光致發光特性進行了測試對比，結果表明在下列條件下生長出來的材料具有更好的光學和電學性能：有源區生長溫度在700 、波導層/比選擇為60 、 n型波導漸變摻雜190sccm - 590sccm的sih _ 4 、 p型波導漸變摻雜90sccm - 490sccm的dmzn 。
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