doping temperature 中文意思是什麼
-
Iron and zinc doping can lower the transformation temperature of anatase to rutile
鐵及鋅的摻雜會降低銳鈦晶向金紅石的轉變溫度。 -
The 3d electrons increased with the content of mn doping increasing, and the electrical property increased accordingly as the electron transport path improved. it is confirmed that all the orthorhombic perovskite phase which is formed initially at the heat treatment temperature of about 600c and thoroughly above 850c are observed in the lcmto thin film deposited on si ( 100 ) substrate by rf magneto - controlled sputtering
確認了採用射頻磁控濺射法于si （ 100 ）基板上生長的薄膜至多在600熱處理已開始形成晶相，形成的晶相全部是正交晶系鈣欽礦相，提高熱處理溫度，薄膜中晶相含量相對增大，高於850后晶相基本形成完畢。 -
While still not evidenced in our experiment, liquid - phase doping of ammonium molybdate solution has been broadly agreed to be able to significantly increase the yield of swnts. we have developed another doping method, solid - phase doping of metal molybdenum at elevated temperature, and discovered that sol - gel prepared catalyst with such doping can be used to grow multi - wall carbon nanotube bundles in a very large scale
對催化劑進行摻鉬處理表明，它可顯著提高催化劑催化裂解甲烷合成納米碳管的能力：作者在高溫下進行了催化劑摻入金屬鉬的實驗，得到了一種性能優異的催化劑，以此制備的多壁納米碳管的呈束狀分佈，所得的粗產物與催化劑之間的重量比達15倍以上。 -
The components, microstructure, luminousness, thickness and surface topography of the films were analysised via xrd, uv ? vis, xps, ellipsometric examination and stm. the photocatalytic properties of these fims are characterized by the decomposition rate of methylene blue or rhodamine b. the effect of sputtering power, temperature, o2 mass flow, bias, w - doping and sputtering time on photocatalytic properties are discussed
採用x射線衍射儀、紫外-可見光分光光度計、 x光電子能譜儀、薄膜厚度測試儀及掃描探針顯微鏡等測試手段，研究分析了薄膜的組分、結構、透光率、膜厚和表面形貌等。 -
The diffusion carrier concentration profile and junction depth were measured and compared with conventional furnace processing diffusion ( cfd ). it presented following conclusions : 1 ) the temperature distribution in quartz chamber of rtd furnace is uniform because square resistance is uniform after rtd ; 2 ) the diffusion velocity of rtd furnace by a factor of three compare to conventional furnace processing diffusion ( rtd ) ; 3 ) if diffusion temperature and doping phosphorus are equivalent, doping phosphorus of rtd are more than of cfd in equivalent distance to the silicon surface
實驗研究了快速熱擴散（ rtd ） ：通過旋塗磷膠和印刷磷漿兩種方式考查了2 4和103 103單晶硅的快速熱擴散特性，發現： 1 ）此樣機的溫度場在空間分佈上是均勻的； 2 ）快速熱擴散可以比傳統擴散快3倍的速度進行擴散； 3 ）在擴散溫度和摻雜磷源相同的條件下，與傳統擴散相比，快速熱擴散將雜質向結更深的地方推進。 -
We have found the best ways to optimize the growth of quality zno films and got highly c - axis oriented zno films. the microstructures of the films were observed by afm. after analyzing the crystal structures, the crystal tropism and the surface conformation flatness, we found the result that the substrate temperature of 400 ? is ideal for silicon substrates, which conforms to the result of the structure analyse. by analyzing the magnetism of zno films, we found that the films appropriately doped with fe, co ions have magnetism at room temperature and their magnetism can be improved by doping other little cu ion, but it is not certain that the content of cu is higher, the film has more magnetism, so it has the best content of cu. moreover, the films which have best crystal structures may not have the best magnetism
我們採用原子力顯微鏡（ afm ）方法觀察薄膜的顯微結構，利用所得的圖象信息對薄膜的晶粒結構、晶粒取向、表面形態平整度等進行分析討論，認為400的襯底溫度對硅襯底薄膜是合適的，與結構分析的結果一致。通過對薄膜磁性能的分析和研究，我們得出一些有意義的結果：適量過渡金屬離子fe 、 co摻雜的zno薄膜，在室溫下具有鐵磁性，而在此基礎上摻入少量的cu離子能改善薄膜的磁性。摻cu量有個最佳值，而且結構最好的薄膜磁性不一定最好。 -
Along with the doping content increases, the dielectric constant initially increased and then decreased. the dielectric loss was on the contrary. 4. bt _ 4 doped with bi _ 2o _ 3 or v2o5 got a lower sintering temperature. a babi4ti4o15 phase raised when bi _ 2o _ 3 was doped and the dielectric properties ruined
3 . bst中摻雜zro _ 2 ，晶粒尺寸增大，摻雜量較大時會產生第二相bazro _ 3 ，介電常數隨摻雜量的增大呈現先增大后減小的趨勢，介電損耗則先減小后增大。 -
In this thesis, the mechanism of high conductivity along c direction in ktp crystal grown by high temperature solution method was firstly elucidated. a scheme of doping certain elements to reduce the conductivity of ktp crystal along c direction was put forward
本文首先闡述了導致高溫溶液法生長的ktp晶體c向電導率較高的形成機理，提出採用摻入特定元素的離子來降低ktp晶體c向電導率的方案。 -
On this condition, based on the experimental results gotten by the microwave absorption dielectric - spectrum measure technique, the photographic process at room temperature in agcl cubic microcrystals doped with k4fe ( cn ) 6 is simulated. through the optimization of simulating parameters, not only the cross - section and trap depth of the shallow electron trap induced by the dopant, but also the optimal doping amount is obtained
在此基礎上，以微波吸收介電譜檢測技術的實驗結果為依據，對摻有k _ 4fe （ cn ） _ 6的agcl立方體微晶在室溫下的曝光過程進行了模擬，通過調節模擬參數，不但計算出由摻雜劑引入的淺電子陷阱的俘獲截面和陷阱深度，而且得到了這種摻雜乳劑的最佳摻雜濃度。 -
It shows that the particle number will fluctuate with the recombination coefficient ; 3 ) the dynamic process of the n - type doped diamond film is simulated. the particle distributions of s, s + and ar + are gotten. the result has important reference to the investigation of n - type diamond film doping at low temperature
（ 3 ）對不同氣壓、偏壓和不同的配比情況下n型硫摻雜的金剛石薄膜的動力學過程進行了模擬，得出了摻雜元素s和s ~ +以及惰性氣體ar ~ +的粒子數分佈，計算結果對摻雜過程的研究有重要的參考價值。 -
Another possible reason for this phenomenon is that with higher temperature, the mobility near defects of carbon atoms in grown carbon nanotubes would be also elevated, which gave carbon atoms higher mobility and have chance to readjus to decrease or eliminate some defects. a series of pretreatments and modifications including purification, annealing and doping were performed before hydrogen storage experiments carried out at room temperature under modest pressure ( 12mpa )
在氮氣中進行退火處理納米碳管的儲氫性能高於在空氣中退火的納米碳管，主要原因是在空氣中退火時，納米碳管的表面引入了大量的氧官能團，而氧官能團能夠占據納米碳管的缺陷位，減少了氫的可吸附位置，阻礙氫進入納米碳管，從而降低了納米碳管的儲氫能力。 -
On the other hand, relationship between doping concentration, phase transition temperature, magnitude of resistance change and hysteresis width was investigated
在此基礎上，本文進一步探討了摻雜濃度與vo _ 2薄膜相變溫度、電阻突變數量級以及熱滯寬度的關系。 -
Then, the effect of vacuum annealing temperature on vo _ 2 thin film phase transition temperature, magnitude of resistance change and hysteresis width by doping zr ~ ( 4 + ) was discussed
（ 2 ）本文以摻鋯為例，探討了不同的真空退火溫度對vo _ 2薄膜的相變溫度、電阻突變數量級以及熱滯寬度有何影響。 -
Results show that the increase of semiconductor - metal phase transition temperature and the decrease extent of resistance is linear to zr ~ ( 4 + ) doping content, while the hysteresis width of vo _ 2 thin film fluctuates with zr ~ ( 4 + ) doping content
實驗結果表明:隨zr含量的增加， vo _ 2薄膜的半導體-金屬轉變溫度和電阻突變數量級呈線性下降，同時，隨摻雜量的增加， vo _ 2薄膜的熱滯寬度的變化規律是先減小后增大。 -
The results show that these three kind of materials are effective to reduce the a - phase - transformation temperature and accelerate the a - phase - transformation process. no bough - like structure was found in the doping production of heat - treatment
結果表明：這三種物質均有明顯的降低氧化鋁相變溫度，促進氧化鋁相變的作用，得到的焙燒產物中基本上沒有「樹枝狀」結構。 -
On the basis of photoelectronic dynamics, an energy model at room temperature that describes the cubic silver halide microcrystals not doped or doped with metal ion complex at deferent doping amounts is proposed, and then a series of differential equations describing the relationship between carriers number are set up
本工作以光電子動力學理論為依據，建立了一種描述純鹵化銀微晶及摻有不同濃度金屬離子絡合物的鹵化銀立方體微晶在室溫下的能級模型，由此生成了一組描述粒子數關系的微分方程。 -
The appropriate calcinations temperature is about 700, and the tetragonal sno2 phase crystal structure of the particles remained unchanged when sb was doped to it. as the calcinations temperature increasing and the calcinations time prolong, the size of particles grows and the crystallization tend to be complete. study on the electrical properties of ato powders prepared by hydrothermal synthesis was performed in - depth, the most optimal electrical properties are obtained at doping ratio of 11 percent
水熱法制備的ato納米粉體在熱處理溫度700左右較為適宜，銻的摻雜並未改變粉體的四方相金紅石結構，隨銻摻雜量的增加，粉體的粒度變小；隨熱處理溫度的升高和熱處理時間的延長， ato粉體的粒度增大，晶體結構趨于完整。 -
The hydropilicity and photocatalysis of the samples were studied. the effects of the substrate temperature, carrier gas flux, o2 flux and n doping level on the microstructure, composition and properties of the films have been studied synthetically
文章系統研究了基板溫度、載氣流量、 o _ 2流量和n摻雜量等工藝參數對tio _ 2薄膜微結構、組成和性能的影響。 -
Influence of doping boron on synthesis temperature and properties of sral2o4 : eu, dy phosphor
長余輝發光材料合成溫度及性能的影響 -
Thus it is considered that the technique of dz formation by means of rtp may not be suitable for heavily boron - doping cz silicon. since the higher concentration vacancy could decrease the stress inducing by oxygen precipitates, the size of the oxygen precipitation with higher density was smaller in the hb si samples in comparison with the samples without rtp pre - annealing. moreover, as for the technique to generate dz by rtp in lightly boron - doping samples, it was found that the behavior of oxygen precipitation and dz was determined by the annealed temperature, followed annealing and ambient of rtf as well
結果顯示，對于普通輕摻矽片能形成明顯的很寬的潔凈區的rtp預處理工藝，應用於重摻硼樣品時沒有潔凈區形成，所以rtp預處理獲得潔凈區的工藝不適用於重摻硼矽片，硼的大量摻雜對氧沉澱促進效果大於高濃度的空位對氧沉澱的洲排浙江大學碩士學位論文李春龍：直拉重摻硼硅單晶中氧沉澱的研究促進效果；大量空位的引入，有利於釋放氧沉澱生長過程的內應力，適當增加重摻硼樣品氧沉澱密度，減少其尺寸，並伴有層錯生成。
分享友人