edge absorption 中文意思是什麼

edge absorption 解釋
邊緣吸收
  • edge : n 1 刀口，（刀）刃；鋒；端；銳利。2 邊，棱，邊緣，邊界，界線，界限。3 優勢，優越條件。4 （聲調、...
  • absorption : n. 1. 吸收，合併。2. 專心，一心不亂，熱中 （in）。3. 〈口語〉飲食。
  1. The absorption characteristics was that the surface plasma absorption peak appeared around 570 nm shifted to a short wavelength and strengthened as the cu composition increased. but the maximal shift range of the absorption - edge preponderated over 500 nm, and leaded that the dipolar plasma resonance absorption peak were covered up and gradually disappeared in the absorption spectrum. we theoretically explained the mechanism of the modulating action

    實驗觀察到cu表面等離子體共振吸收峰位在570lun附近的吸收邊頻移量超過了500nln .理論分析表明，吸收峰位的移動主要源於偶極共振，而峰形的寬化主要由納米粒子的表面效應和量子尺寸效應引起
  2. With the annealing temperature increasing, the average optical transmittance increases and the absorption edge of the transmission curve of the films moves toward short wavelength

    Azo薄膜的塞貝克效應的結果表明: azo薄膜具有明顯的塞貝克效應，溫差電動勢隨著溫差（ ? t ）的增大而呈線性增大。
  3. The absorption edge shifted to the longest wavelengh when n2o flux was 40sccm, then it shifted back to the shorter wavelengh with the n2o flux rising

    Tio _ 2薄膜的吸收限隨著n _ 2o流量的增加，先紅移后藍移。
  4. The ultraviolet absorption edge becomes steep and moves to longer wavelength, and the optical band gap decreases. the optimal quality and ultra - violet absorption property of the zno thin film annealed at 450 are obtained

    中性氣氛中退火薄膜的電阻率基本不變，在真空和還原氣氛中薄膜的導電能力增強，而在氧化氣氛中薄膜的電阻顯著增加了七個數量級，成為絕緣薄膜。
  5. X - ray absorption near edge structure, xanes

    射線吸收近邊結構
  6. The ir cut - off wavelengths are around 12. 8 m due to the ge - o impurities, the transmittance is up to 80 %. the short - wavelength absorption edge shifts from 453nm towards ultraviolet region to 410nm with increasing cscl content, the transmittance in visible region also increases in the same sequence

    由雜質基團ge - o鍵引起的紅外截止波長在12 . 8 m附近，紅外透過率達80 ；隨cscl含量的增加，紫外吸收限向短波方向位移，從453nm移至410nm ，且透過率增加。
  7. The shifts of absorption edge of nanocrystsls compared with that of bulk have been calculated by means of effect - mass approximation model. the calculation and experimental results looked almost same

    用有效質量近似模型（ ema ）計算了半導體納米晶體的吸收邊相對體材料的移動，並將理論結果和實驗結果進行了比較，兩者相符較好。
  8. The results show that the differences between the two composites are very large. although the micrograph of the ni nano - wire and the co nano - wire are nearly the same, as the metal composition increased, the absorption band - edge of the ni / aao composite is small red - shifted ( 13 run ), however, the absorption band - edge of the co / aao composite is strongly red - shifted ( 80 nm ). meanwhile, the ni / aao and co / aao composite exhibit the optical features of the semiconductor with indirect and direct band gap respectively

    或no組份比的增加， ni / aao吸收邊的紅移量僅約13nln ，而co / aao的吸收邊紅移量卻超過了80lun ，分析發現ni / aao復合體系具有間接帶隙半導體的光學特徵，而co從ao復合結構則具有直接帶隙半導體的光學特徵; 5 .實驗研究了a創aao納米有序陣列復合結構的光吸收特性，在其光吸收譜上出現了較強的ag表面等離子體振蕩吸收峰，隨ag沉積量的減少，吸收峰位發生紅移，且逐漸展寬
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