electron beam lithography 中文意思是什麼

electron beam lithography 解釋
電子束光刻
  • electron : n. 【物理學】電子。 the electron beam 電子束。 the electron theory 電子（學）說。
  • beam : n 1 梁，棟梁，桁條；（船的）橫梁。2 船幅；（動物、人的）體幅。3 （秤）桿，杠桿，（織機的）卷軸，...
  • lithography : n. 石印〈平版印刷〉術；平版印刷品。
  1. Electron-beam lithography with a novel multilevel resist structure defines the pattern.

    採用新型的多層抗蝕劑結構的電子束光刻來形成圖形。
  2. Vector scan electron beam lithography

    矢量掃描電子束光刻
  3. Abstract : a new method for determining proximity parameters, and in electron - beam lithography is introduced on the assumption that the point exposure spread function is composed of two gaussians. a single line is used as test pattern to determine proximity effect parameters and the normalization approach is adopted in experimental data transaction in order to eliminate the need of measuring exposure clearing dose of the resist. furthermore, the parameters acquired by this method are successfully used for proximity effect correction in electron - beam lithography on the same experimental conditions

    文摘:在電子散射能量沉積為雙高斯分佈的前提下，提出了一種提取電子束光刻中電子散射參數，和的新方法.該方法使用單線條作為測試圖形.為了避免測定光刻膠的顯影閾值，在實驗數據處理中使用歸一化方法.此外，用此方法提取的電子散射參數被成功地用於相同實驗條件下的電子束臨近效應校正
  4. At present, feas have potential for use as an electron source in a wide variety of applications, including microwave power amplifiers ( such as twts, klystron ), flat panel displays, electron microscopy, and electron beam lithography

    目前，場致發射陣列陰極的應用領域十分廣泛，主要包括微波器件（應用於twts ， klystron等） 、平板顯示器（ feds ） 、電子顯微鏡及電子束刻蝕系統等。其中，應用研究的焦點主要集中在平板顯示器和射頻功率放大器。
  5. By studying and using conventional 1c process in combination with electron beam lithography ( ebl ), reactive ion etching ( rie ) and lift - off process, several efficient results are produced : semiconductor and metal nano - structures are fabricated ; the matching problem of photolithography and electron beam lithography is well solved ; the process efficiency is improved ; the process is offered for the controlled fabrication of nano - structures by repetitious process testing ; several nano - structures such as si quantum wires, si quantum dots, double quantum dot structures and tri - wire metal gate are firstly fabricated by using ebl and rie processes

    研究利用常規的硅集成電路工藝技術結合電子束光刻，反應離子刻蝕和剝離等技術制備半導體和金屬納米結構，很好地解決了普通光刻與電子束光刻的匹配問題，提高了加工效率，經過多次的工藝實驗，摸索出一套制備納米結構的工藝方法，首次用電子束光刻，反應離子刻蝕和剝離等技術制備出了多種納米結構（硅量子線、量子點，雙量子點和三叉指狀的金屬柵結構） 。
  6. The most prevalent procedure is to use photolithography or electron - beam lithography to produce a pattern in a layer of photoresist on the surface of a silicon wafer

    最常用的步驟是用光蝕刻或電子束蝕刻法，在矽晶圓表面的光阻層上製作出圖案。
  7. Although the creation of a finely detailed bas - relief master is expensive because it requires electron - beam lithography or other advanced techniques, copying the pattern on pdms stamps is cheap and easy

    雖然得花上大筆金錢，才能以電子束蝕刻或其他高階技術製作出有精密細節的淺浮雕主片，但要復制pdms壓模的圖案卻是便宜又容易。
  8. This paper introduced the develop level of electron beam lithography in the world and the techniques used in pattern generators

    論文首先簡要介紹了國內外電子束曝光技術的發展水平和圖形發生器的工作原理。
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