electron diffraction pattern 中文意思是什麼

electron diffraction pattern 解釋
電子衍射花樣
  • electron : n. 【物理學】電子。 the electron beam 電子束。 the electron theory 電子（學）說。
  • diffraction : 分解
  • pattern : n 1 模範，榜樣；典範。2 型，模型；模式；雛型；【冶金】原型。3 花樣；式樣；（服裝裁剪的）紙樣；圖...
  1. This calibration is usually carried out by employing a double exposure technique in which the diffraction pattern and electron image of a crystal of molybdenum trioxide are successively exposed

    這個標準通常利用使得衍射模型和一個三氧化鉬的結晶體的電子成像成功展現的雙投照技術來執行。
  2. For xrd, ellipsometry examinations, single - side - polished si ( lll ) wafers were used as substrates and for resistance measurement, glass was used and for infrared examination, double - side - polished si ( lll ) wafers were used and for ultraviolet - visible spectrophotometry, double - side - polished quartz wafers were used and for tem micrograph and electron diffraction pattern observation, cu nets deposited by formvar film were used. the cu - mgf2 cermet films were from 50 to 600nm thick

    用於xrd分析、橢偏測量的單拋si （ 111 ）晶片和電阻測試的載玻片上淀積膜厚約為600nm ；用於ir測試的雙拋si （ 111 ）晶片和uv測試的石英玻璃片上淀積膜厚約為250nm ；用於透射電鏡分析的樣品則淀積在400目銅網上的支撐formvar膜上，膜厚約為50 100nm 。
  3. The enhanced photoconductive effect from small amount of tnf facilitates the preparations of new organic photoconductive devices under the drive of low fields. in the fourth chapter, inclpc nanoparticles embedded in poly ( n - vinylcarbzaole ) ( pvk ) were prepared successfully by dissolving inclpc in aprotic organic solvent / lewis acid with great concentration for the formation of electron donor - acceptor complexes, i. e., the method of complexation - mediated solubilization. the fabricated inclpc nanoparticles were characterized by means of uv / vis absorption, x - ray diffraction pattern, and tem

    論文的最後一章中，我們合成了具有較好的電子傳輸性能的化合物』一二苯基四竣酸花酚亞胺（ ddp ） ；研究了其溶解性、熱穩定性、晶體結構、紅外光譜、紫外吸收光譜和蒸鍍薄膜的屬性，並用量子化學計算方法模擬其單分子的空間構型；載流子遷移率測試的結果約為ix10 「 、 m 』 v 」 』 ? s 「 』 。
  4. The morphologies of powder were observed by using high - resolution transmission electron microscopy ( hrtem ) ; x - ray diffraction ( xrd ) pattern was used to analyze the phases of the powder ; energy dispersive x - ray spectroscopy ( edx ) was used to analyze the component of composite powder

    用高分辨電鏡觀察復合粉體的形貌，進行電子衍射分析；用d / 3ax3b型x射線衍射儀作復合粉體的物相分析；用pv9900型能譜儀作復合粉末的成分分析。
  5. The magnitude and sense of this rotation need to be established for all operating conditions of the microscope so that the information contained in a diffraction pattern can be correlated with the electron micrograph

    這個旋轉的大小和意義需要為所有的顯微鏡操作條件建立，然後一個衍射模型包含的信息就能夠與電子顯微圖相匹配。
  6. The transmission electron microscopy ( tem ) images show that ceo2 nanowires are about 60 nm in diameter, which correspond to the pore sizes of the membranes used. the selected - area electron diffraction ( saed ) pattern indicates that the nanowires selected are single crystals

    從透射電鏡（幾瑪圖像可以得知ceo :納米線直徑大約60nln ，與所用膜的孔徑相符，電鏡選區衍射（ saed ）顯示所選的ceo :納米線為單晶結構。
  7. Since magnetic lenses produce an image rotation that is related to the strength of the lens, then it is clear that there will be a relative rotation between the diffraction pattern and the corresponding electron micrograph

    由於磁性透鏡通過透鏡的磁力產生一個映像旋轉，然後很明顯的，在衍射模型和相應的電子顯微圖之間就會產生一個相關的旋轉。
  8. Whether the 180 inversion appears in the relation between the electron - optical image, i. e. the micrograph, and diffraction pattern seen on the final screen, depends on the number of inversions that the image and diffraction pattern undergo by the lenses following the objective lens in the microscope column

    電子光學映像比如顯微圖和最終屏幕所見衍射模型之間180度倒置的出現是否有聯系，取決于顯微鏡柱中目標通過透鏡產生的映像的倒置數量。
  9. The morphology of powders is observed, with scanning electron microscopy ( sem ) and transmission electron microscopy ( tem ). x - ray diffraction ( xrd ) pattern is used to analyze the phase of the composite powders. the copper nanoparticles / paraffin thermosensitive composite materials are obtained by the compress moulding

    用掃描電鏡（ sem ）對復合顆粒的表面形貌進行觀察，分析顆粒的粒度、團聚情況等，用透射電鏡（ tem ）觀察分析了復合顆粒中銅的形貌、粒徑及復合顆粒的精細結構， x射線衍射（ xrd ）分析復合顆粒物相組成。
  10. An optimized cvi - pip process has been achieved, by which the c / sic composites with 2. 1 ig / cm3 high density and uniformity are fabricated in 200 hours. the microstructure and composition of pyrolytic carbon interphase and cvi - pip silicon carbide matrix in the c / sic composites are investigated with the help of polarization microscope, scanning electron microscope, and x - ray diffraction technique, etc. the structure characteristic of pyrolytic carbon interphase and cvi - pip silicon carbide matrix, and effects of cvi - pip process on it are summarized and discussed. by growth course and feature of pyrolytic carbon interphase and cvi - pip silicon carbide matrix analyzed, a whole - course densification mechanism of lamellar - growth - pattern is proposed to explain the densification phenomenon, which makes a systematic understanding on the feature of pyrolytic carbon interphase and cvi - pip silicon carbide matrix, and the multiple stitching interface binding

    根據熱解碳中間相、 cvi - pip系sic基體相的組織構成與外貌特徵，通過對熱解碳中間相、 cvi - pip系sic基體相的生長過程和生長特徵進行分析，提出了基於層生長模式的緻密化過程理論，解釋了熱解碳中間相、 cvi - pip系sic基體相以及釘扎誘導結構多重界面的形成： （ 1 ）在1150下， cvi - sic亞基體相遵從「過飽和?凝聚?融合」機理沉積，以8f型? sic為主，同時還會有少量4h型? sic ，無游離si和游離c存在； （ 2 ） pip - sic亞基體相由非晶態sic以及彌散分佈的- sic微晶、 si - o - c和游離c組成； （ 3 ）熱解碳中間相與碳纖維增強相之間、 cvi - sic亞基體相之間形成滲透釘扎結構過渡界面， pip - sic亞基體相與摘要cvi一sic亞基體相之間形成誘導結構過渡界面。
  11. The reflection high - energy electron diffraction ( rheed ) was used to monitor the surface of insb in situ during the epitaxial growth, rheed diffraction pattern indicates volmer - weber growth at the very early stage of nucleation

    低溫insb緩沖層在生長初期顯示明顯的島狀生長，通過rheed強度振蕩的觀察，確定低溫insb緩沖層的生長速率為0 . 26 m / h 。
  12. With older microscopes and with less expensive modern microscopes there are generally only two lenses below the objective, each of which inverts the diffraction pattern and the electron image

    電子光學映像比如顯微圖和最終屏幕所見衍射模型之間180度倒置的出現是否有聯系，取決于顯微鏡柱中目標通過透鏡產生的映像的倒置數量。
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