electron frequency drift 中文意思是什麼
electron frequency drift
解釋
電子頻移-
Algan / gan hemt has high breakdown electric field, fast electron drift velocity and large electron concentration, so it has been used more and more in high frequency and large power fields
Algan / ganhemt由於具有擊穿電壓高、電子漂移速度快和電子濃度大等特點,已被越來越多地應用於高頻及大功率領域。 -
Due to its intrinsic merits, such as wide band gap, high electron saturated drift velocity, high melting point, good coefficient of thermal conductivity, anti - radiation and good chemical stability, gallium nitride as a direct band gap semiconductor has become the promising material for the application of short - wave light - emitting devices and high temperature, high frequency and high power electronic devices
Gan是直接帶隙半導體材料,以其禁帶寬度大、電子飽和漂移速度大、熔點高、熱導率高、抗輻射能力強和化學穩定性好等優點成為製造短波長光發射器件及高溫、高頻、大功率電子器件的理想材料。
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