electron semiconductor 中文意思是什麼
electron semiconductor
解釋
電子半導體- electron : n. 【物理學】電子。 the electron beam 電子束。 the electron theory 電子（學）說。
- semiconductor : n. 【物理學】半導體。
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Single crystal silicon is the semiconductor material which is used mostly in the present electronic industry, it play a very important role in the field of aviation - astronavigation, optics, electron and micro - electronics
單晶硅材料是當代電子工業中應用最多的半導體材料，它在航空航天、光學、電子和微電子等領域發揮著十分重要的作用。 -
In lab the most often used is electron multiplier and semiconductor type
實驗室常用的是電子倍增器和半導體型光二極體。 -
Its main purpose is to know different kinds of detecting method. generally, euv and soft x - ray photodetector included five types : ionization gas, semiconductor, electron multiplier and film
總的說來極紫外和軟x射線光電探測器的類型有氣體電離型、半導體型、電子倍增器以及極紫外和軟x射線膠片（干板） 。 -
The electron multiplier detector is appropriate to do ordinary detect works for its high sensitive and semiconductor photodiode ( such as silicon diode ) is appropriate to act as transfer standard detect for its high stability
倍增器的靈敏度非常高，適合日常的測量工作；半導體型光電二極體（如si二極體）的穩定性好，適合作傳遞標準探測器。 -
The progress in sensitizer of photosensitized photoisomerization of norbornadiene, including triplet energy transfer photosensitizer, transition metal compounds photosensitizer, electron transfer photosensitizer and semiconductor photosensitizer, is reviewed
論述了光敏化降冰片二烯異構化反應敏化劑的研究進展，包括三重態能量傳遞光敏劑，過渡金屬化合物光敏劑，電子轉移光敏劑，半導體光敏劑等幾種類型。 -
Characterized by wide band gap, high breakage electric field, high thermal conductivity, high saturated electron mobility, cubic silicon carbide ( 3c - sic ), considered as one of the most promising wide band gap semiconductors, is widely utilized in high temperature, high frequency and large power semiconductor devices
3c - sic被譽為最有潛力的寬禁帶半導體材料，具有帶隙寬、臨界擊穿電場高、熱導率高、飽和電子漂移速度大等優點，是高溫、高頻、高功率半導體器件的首選材料。 -
A trend of photo - induced electron transition from p - type pc to n - type organic semiconductor was strongly supported by the data of sps and fisps measurements, the wire - like configuration of the tio2 tubule nanostructure benefited the electron - transport thereby improved the efficiency of the disassociation of the photogenerated carriers
表面光電壓測試結果表明，復合材料中存在著強烈的從p -型酞菁材料到n -型氧化物半導體材料的光致電荷轉移。而且tio _ 2的納米管和線狀結構提高了電子的傳輸效率最為明顯，使光生電荷的分離得到顯著改善。 -
The laps uses photo excitation of the semiconductor to probe the surface potential at the insulator - electrolyte interface. the semiconductor is addressed by a modulated flux of ( infrared ) photons : this flux results in the generation of hole - electron pairs in the semiconductor
Laps的原理是基於電場效應使器件對絕緣層與電解質溶液間界面電位變化敏感，其結構類似於eis （電解質?絕緣層?半導體）結構，它的特殊之處在於用光對半導體進行照射引起電解質?絕緣層界面間電位的變化。 -
This paper studies the application of inductively coupled plasma ( icp ) technology to the etching compound semiconductor insb - in film. by means of single probe and double probe, the ion density and electron temperature of chamber ( 30mm and 50mm in height respectively ) under varied process condition were diagnosed. the spatial distribution of the axial position of the two parameters and the varied curve that the two parameters varies with the power and air pressure are obtained
利用單探針和雙探針診斷30mm高反應室和50mm高反應室在各種工藝條件下的離子密度和電子溫度，得到這兩個參數在反應室軸向位置的空間分佈、隨功率和氣壓的變化曲線、頂蓋接地和反應室體積對它們的影響，結果表明離子密度為10 ~ 8 10 ~ （ 10 ） cm ~ （ - 3 ） ，電子溫度在4 10ev之間；當頂蓋接地時，該處的等離子體密度明顯大於不接地；在同樣條件下， 50mm高反應室內的離子密度明顯大於30mm高反應室。 -
Suitable for the domestic water, food processing water, cool the circulating water, the boiler supplies water, exceed the filtration in advance of the pure water, steam condensation water, build well liquid and water flooding in the oil field, chemical liquid medicine, electroplate the filtration that the liquid, much kinds of acid or alkaline solution, emulsifier wash helping, cleaning solution, medical products, ink and water treatment of the semiconductor, electron trade
水過濾器適用於生活用水食品加工用水冷卻循環水鍋爐供水超純水的預過濾蒸汽冷凝水油田修井液及注水化學藥液電鍍液多種酸性或堿性溶液乳化劑洗滌濟洗滌液醫藥製品墨水的過濾及半導體電子行業的水處理。 -
Sem, transmission electron microscopy ( tem ), x - ray energy - dispersion analysis ( edax ), xrd, electron diffraction ( ed ) and high - resolution electron microscopy ( hrem ) were used to investigate the morphology, atomic composition and crystal structure of the nanowires. the hexagonal cdse nanowires with single crystal structure have been obtained in dmso under 140. ( 3 ) semiconductor te and cdte nanowires embedded in aao templates were fabricated for the first time by dc < wp = 7 > electrodeposition in ethylene glycol
Sem 、 tem 、 edax 、 xrd 、 ed 、 hrem分析的結果表明，所得cdse納米線為六方晶型，晶體的（ 001 ）晶面沿平行於基底的方向擇優生長，且隨沉積溫度的降低，這種擇優生長的趨勢越來越強；納米線晶體在生長時，由於受aao模板孔徑的限制，形成c軸方向拉長的晶粒，其長徑比達5 1以上；晶體的大小和完善程度隨沉積溫度的降低而增大， 185沉積得到多晶六方cdse納米線，而140沉積時可得到六方cdse單晶納米線。 -
Mainly for capacitance, semiconductor, jingzhen, resistance, ic chips, jiechajian procedures, connecting pieces, switching devices, silicon, triode, diode, piezoelectric ceramic base films, tubes, electron tubes, electronic stamping, precision metal parts, production processes between cleansing processes
晶元接插件連接件轉接器矽片三極體二極體壓電陶瓷基片顯象管電真空器件等內精密電子沖壓五金零件，生產加工過程工序間的清洗。 -
By studying and using conventional 1c process in combination with electron beam lithography ( ebl ), reactive ion etching ( rie ) and lift - off process, several efficient results are produced : semiconductor and metal nano - structures are fabricated ; the matching problem of photolithography and electron beam lithography is well solved ; the process efficiency is improved ; the process is offered for the controlled fabrication of nano - structures by repetitious process testing ; several nano - structures such as si quantum wires, si quantum dots, double quantum dot structures and tri - wire metal gate are firstly fabricated by using ebl and rie processes
研究利用常規的硅集成電路工藝技術結合電子束光刻，反應離子刻蝕和剝離等技術制備半導體和金屬納米結構，很好地解決了普通光刻與電子束光刻的匹配問題，提高了加工效率，經過多次的工藝實驗，摸索出一套制備納米結構的工藝方法，首次用電子束光刻，反應離子刻蝕和剝離等技術制備出了多種納米結構（硅量子線、量子點，雙量子點和三叉指狀的金屬柵結構） 。 -
The other has two metal - insulator - semiconductor ( ms ) contacts with lower leakage current ( less than 4 pa, 300v ) and better energy resolution ( about 10 % fwhm for 241am 59. 5kev line ) and poor working stability. in theoretical studies, the analysis on the phase equilibrium in the vapor growth of cdse single crystals shows that the stoichiometry of cdse crystals can be controlled effectively by controlling the stoichiometry of starting materials and the vapor growth temperature. besides, the investigation of the transporting properties of charge carries in cdse detectors indicates that the noise in energy spectrum detected by using the detectors with msm structure is caused by the hole injection, which is induced by electron injection and the light injection
本文把cdse單晶體的生長、單晶體的成分、單晶體的性能以及單晶體在室溫核輻射探測器中表現出來的性能結合起來進行了比較系統的研究；採用垂直無籽晶氣相提拉法生長出了電阻率為10 cm量級、尺寸為中10mm 30mm的單晶體；制備出了能量解析度達10 （ fwhm ） （對~ （ 241 ） am59 . 5kev譜線而言）的cdse室溫核輻射探測器，取得了較好的研究結果。 -
Based on the transferred - electron theory of the iii - v compound semiconductor and the research on the lock - on effect of the si - gaas pcss ' s, this paper proposes the monopole charge domain model similar to the guun or high - field domain to explain the peculiar switching phenomena occurring in the lock - on mode theoretically
本文基於gaas等?族化合物半導體的轉移電子理論，結合半絕緣gaas光電導開關中特有的lock - on效應的研究，提出了類似於耿疇（高場疇或偶極疇）的單極電荷疇理論模型，對光電導開關lock - on效應的各種現象給出了理論解釋。 -
According to the current problems such as low quantum efficiency. limited available sun energy spectrum range, and inefficient recovery, resulted from the practical using of photocatalysis, using the narrowband semiconductor cds ( eg = 2. 5ev ) to compound with tio2 seems to be an effective solution. since it will not only enlarge the region of the absorption with the proper narrow band of cds but also improve the photodegradation efficiency on account of the band overlap of the two, which makes the photo induced electron and holes separate more easily
本文針對光催化技術應用中存在的tio _ 2光催化量子效率低，吸收利用太陽能光譜范圍有限，催化劑回收困難等問題，通過窄禁帶半導體cds （ e = 2 . 5ev ）的復合，對納米tio _ 2進行了改性研究，一方面，由於cds的窄禁帶寬度可以擴展薄膜的光譜吸收范圍，另一方面，由於能帶的交疊，提高了光生電子和空穴的分離效率，從而提高了薄膜的光催化降解效率。 -
In this paper, using surface photovoltage spectroscopy ( sps ) and field induced surface photovoltage spectroscopy ( fisps ) as a dominated tool, we investigated the surface and interfacial electron structure, charge transfer character of two nanostructured composite system and the effect about atmosphere ( water and oxygen ) on the semiconductor nanoparticles
本論文利用表面光電壓譜（ sps ）和場誘導表面光電壓譜（ fisps ）為主要研究手段對兩類納米復合材料的表面和界面電子結構和電荷轉移特性以及空氣中水、氧物種等氣體分子對納米材料表面光伏性質的影響進行了探索性的研究。 -
Thereafter, the current development of the investigation on semiconductor spintronics and its applications in the electron spin devices and realization of quantum computers are reported in this paper
綜述了半導體自旋電子學目前的研究進展及其在自旋電子器件和量子信息處理中的應用。 -
Elements are manufactured of green silicon carbide that is classed as an excess electron type semiconductor
這種硅碳棒由一種新型的碳化硅製成，被歸類為超級半導體。 -
Second, in luminescence materials hole or electron concentration will change with the doping content. so we expand the hole or electron concentration in taylor expansion and calculat the optimum doping contents. for several semiconductor materials such as zns : mn, silicon doped er and gaas, gap, gan doped different materials, we calculat their optimum doping contents which arc close to some experimental results
應用該表達式，給出了各種不同的制備方法zns摻mn 、硅基摻鉺、以及gaas 、 gap 、 gan摻不同元素制出的發光材料，對最佳摻雜含量進行了理論上的計算，理論計算值與實驗數據相符合。
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