electron trapping 中文意思是什麼

electron trapping 解釋
電子陷落
  • electron : n. 【物理學】電子。 the electron beam 電子束。 the electron theory 電子(學)說。
  • trapping : (油墨轉移力)疊印
  1. The electron - trapping breakdown is the main reason accelerating the thermal breakdown, and the thermal breakdown is the fundamentality factor of the breakdown of pcss

    電子俘獲擊穿機制是導致熱擊穿的主要原因,而熱擊穿是導致開關徹底失效的根本因素。
  2. Application of electron trapping material in image information processing

    電子俘獲材料在光信息處理中的應用
  3. Electron trapping center

    電子俘獲中心
  4. So people call this kind material as electron trapping infrared up - conversion and optical storage material, too

    故人們又根據其特性稱之為電子俘獲型紅外上轉換及光存儲材料( etm ? electrontrappinginfraredup - conversionandopticalstoragematerials ) 。
  5. We modified the electron trapping theory to be consistent with our simulation results. 2. in the mp - lwfa simulation, we studied the influence of multiple pulses with various arrangements of the position of the pulses

    在mp - lwfa中,我們研究不同的脈沖長度、不同的脈沖間隔對產生尾流場的影響,著重討論尾流場的飽和機制。
  6. The systematically study of the preparation of alkaline earth sulfide system doped with rare earth and its optical storage properties not only expand new synthesize technology of electron trapping optical storage materials but also afford basis for improving materials properties and application in different application fields

    稀土摻雜硫化物體系的制備及其光學性能的系統研究,不但為電子俘獲型光存儲材料拓展了新的合成技術,也為進一步提高材料的性能及其在不同領域的應用提供了依據。
  7. Firstly it is shown that the thermal breakdown and electron - trapping breakdown theories are the main reason causing the breakdown of pcss

    指出電子俘獲擊穿機制與熱擊穿是開關擊穿的主要原因。
  8. The first step is the creation of trap centers in ultra - thin gate oxides by hot electron injection, and the second step is oxides breakdown induced by hole trapping

    首先注入的熱電子在超薄柵氧化層中產生陷阱中心,然後空穴陷入陷阱導致超薄柵氧擊穿。
  9. Passivation on the surface of nanocrystalline zno was responsible for an energy potential high enough to prevent surface states trapping the electrons or holes photogenerated, it should block the pathway to form the luminescence centers as the vo * * and [ vo *, electron ] or [ vo * *, two electrons ] complex. a new visible luminescence mechanism was presented

    納米氧化鋅( zno )表面的鈍化實際上是在氧化鋅( zno )的核和表面之間形成了大的勢壘阻止表面缺陷捕獲光生電子或光生空穴形成發光中心vo * *和[ vo * , electron ]或[ vo * * , twoelectrons ]復合體,同時,提出了一種新的可見發光機制,很好地解釋了實驗中觀察到的現象。
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