electron traps 中文意思是什麼
electron traps
解釋
電子陷阱-
As shallow electron traps ( sets ) dopants, the action of k4fe ( cn ) 6 that can increase photoelectron lifetime and photographic efficiency is analyzed. optimization concentration of k4fe ( cn ) 6 in cubic agcl emulsion is affirmed
分析了k _ 4fe （ cn ） _ 6摻雜物作為一種淺電子陷阱摻雜劑對于提高光電子壽命、改善感光性能的作用機理。 -
The luminescence theorem of aluminates strontium is studied, too. ce transfers energy to tb in ce and tb co - activated phosphors. light emission of phosphors is led by 4f - 4f - electron leap of tb ; its long lasting persistence is related to electron traps in sraljo, host lattice
鉚對錨有能量傳遞和敏化作用，該磷光體的光發射是杴的4f 4ffh于躍遷發射的結果：其餘輝特性與鋁酸鋸晶格的電子陷階等有關。 -
The total number of defects induced by electron irradiation in 4h - sic is calculated theoretically. the deep level defect of eh6 / eh7 is considered to play the most important role in carrier recombination from the comparison of all kinds of possible electron traps
在輻照的位移效應方面：從理論上對電子輻照在4h - sic中引入的缺陷數量和各種缺陷能級進行了計算和分析，其中只有eh6 / eh7缺陷能級在sic中起著有效的復合中心的作用。 -
This model described relationship of current collapse and traps in buffer layer, and the normalized product of electron mobility and 2deg density with and without current collapses was 0. 95 vgs
該模型描述了電流崩塌效應與緩沖層中陷阱的相互關系，並獲得了電流崩塌前後遷移率與二維電子氣濃度乘積的歸一化值0 . 95 vgs 。 -
Then through the optimization of the code, we can get the dependence of free electron ' s lifetime and the number of recombination events on the density and depth of traps
通過對所得數據的分析，我們得到了光電子壽命以及復合事件的數量和速率對勢阱密度和深度的依賴關系。 -
When such a powerful laser pulse propagates through the plasma, it becomes both shorter and narrower, creating a large electron bubble that traps electrons from the plasma
當如此強大的雷射脈沖傳遞到電漿的時候，脈沖會變得更短更窄，創造出一個很大的電子泡泡，而可以從電漿中抓住電子。
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