electron-hole 中文意思是什麼
electron-hole
解釋
電子穴-
In the optimized structure, the electron distribution at the exit hole of the chunnel is more uniform and the electron beam is rather slim
在該結構中，電子在通道出口處的分佈更加均勻，電子束的束徑較小。 -
When primary electrons hit the surface of the chunnel, secondary electrons are generated, which make the electron distribution at the exit hole of the chunnel more uniform
當初始電子碰撞絕緣壁時，會產生二次電子，而二次電子能改善電子在通道出口處的電子能量分佈的均勻性。 -
Exciton is electron-hole pair held together by their mutual coulomb interaction.
激子就是由電子和空穴在相互間的庫侖力作用下，相互維持在一起的電子--空穴對。 -
In chapter 2, the pcss are manufactured and two technics are introduced. the practical flow is given. meanwhile the linear operational mode and nonlinear operational mode of pcss are analyzed in chapter 3, after simulating time - space distribution of electron and hole in photoconductor, the relations of laser energy, laser character and photoconduction are analyzed and the fundamental principles of nonlinear phenomenon is introduced
在第一章中，介紹了本論文的研究背景，簡要回顧了超寬帶光導脈沖源的發展歷史，同時概括了本論文的主要工作。在第二章中，介紹了光導開關的製作及工作原理，詳細闡述了實際的加工流程，並分析了其線性和非線性兩種工作模式。 -
Hole - similar to a positive charge, this is caused by the absence of a valence electron
空穴-和正是，似類荷電由缺少價電子引起的。 -
The other way was to knock a bound electron off a neutral atom creating simultaneously an electron and a hole.
另一種方法是把束膊電子從中性原子中撞出，同時產生電子和空穴。 -
Guangzhou zhuxing foundry machine co., ltd is a professional manufacturer and seller of rivet machine 、 button machine 、 rush hole machine 、 corn machine, which are suitable for bag 、 hardware 、 clothes - making 、 electron 、 handle - bag 、 stationery 、 lamp 、 shoemaking 、 furniture and so on industries
廣州市鑄星機械有限公司，集研發、生產、銷售於一體，專業生產鉚釘機、鈕扣機、沖孔機、雞眼機，適用於箱包、五金、制衣、電子、手袋、文具、燈飾、製鞋、家私等行業。 -
The reason to cause this phenomenon is due to the change of electric field in the blue oled to induce the probality of the carrier shifted and the hole - electron recombination zone changed, which was a possible alternative to achieve color display. 3 ) device with the structure of ito / npb / adn : balq3 / alq3 / mg : ag was fabricated. when the balq3 dopant concentration was about 25 mol %, a high performance devcie with luminous efficiency of 1. 0 lm / w, the peak of emission spectrum at 440 nm, the cie coordinate at ( 0. 18, 0. 15 ), and half lifetime of unencapsulated device about 950 hrs was achieved
導致本現象的原因是由於各有機層電場強度的變化影響了空穴和電子的隧穿幾率，從而導致載流子的復合區域發生改變而發出不同顏色的光; 3 ）制備了結構為ito / npb / adn : balq3 / alq3 / mg : ag的藍光oled ，空穴阻擋材料balq3的摻入顯著影響了oled的光電性能，當balq3的摻雜濃度為25mol %時， oled的發光效率為1 . 0lm / w ，發光光譜的峰值為440nm ，色純度為（ 0 . 18 ， 0 . 15 ） ，未封裝器件的半衰期達到了950小時; 4 ）在藍光材料adn中摻雜npb 、 balq3和tbp三種材料時，不僅改善了器件的發光亮度和色純度，而且提高了器件的發光效率和壽命。 -
The laps uses photo excitation of the semiconductor to probe the surface potential at the insulator - electrolyte interface. the semiconductor is addressed by a modulated flux of ( infrared ) photons : this flux results in the generation of hole - electron pairs in the semiconductor
Laps的原理是基於電場效應使器件對絕緣層與電解質溶液間界面電位變化敏感，其結構類似於eis （電解質?絕緣層?半導體）結構，它的特殊之處在於用光對半導體進行照射引起電解質?絕緣層界面間電位的變化。 -
Under application of an electric field, the electron and hole move in opposite directions at different velocities.
在電場的作用下，電子和空穴以不同的速度沿著相反的方向運動。 -
The first step is the creation of trap centers in ultra - thin gate oxides by hot electron injection, and the second step is oxides breakdown induced by hole trapping
首先注入的熱電子在超薄柵氧化層中產生陷阱中心，然後空穴陷入陷阱導致超薄柵氧擊穿。 -
This dissertation is the first report that points out the cooperation of hot electron and hole is essential for the tddb of ultra - thin gate oxides
首次提出了超薄柵氧化層的經時擊穿是由熱電子和空穴共同作用導致的新觀點。 -
A hole is the absence of an electron from a sea of electrons that behaves in many ways like a positively charged particle
載子可以是電子或電洞，電洞是電子海里缺了一個電子的空洞，它在許多方面都像是帶正電的粒子。 -
This makes the system of orbitals unstable and an electron from an orbital further out rapidly fills the hole
這使得軌道系統不穩定，外一層軌道的電子會迅速躍遷到內層空軌道上，填補空穴。 -
The other has two metal - insulator - semiconductor ( ms ) contacts with lower leakage current ( less than 4 pa, 300v ) and better energy resolution ( about 10 % fwhm for 241am 59. 5kev line ) and poor working stability. in theoretical studies, the analysis on the phase equilibrium in the vapor growth of cdse single crystals shows that the stoichiometry of cdse crystals can be controlled effectively by controlling the stoichiometry of starting materials and the vapor growth temperature. besides, the investigation of the transporting properties of charge carries in cdse detectors indicates that the noise in energy spectrum detected by using the detectors with msm structure is caused by the hole injection, which is induced by electron injection and the light injection
本文把cdse單晶體的生長、單晶體的成分、單晶體的性能以及單晶體在室溫核輻射探測器中表現出來的性能結合起來進行了比較系統的研究；採用垂直無籽晶氣相提拉法生長出了電阻率為10 cm量級、尺寸為中10mm 30mm的單晶體；制備出了能量解析度達10 （ fwhm ） （對~ （ 241 ） am59 . 5kev譜線而言）的cdse室溫核輻射探測器，取得了較好的研究結果。 -
The author ' s main contributions are outlined as following : first, the roles of hot electron and hole in dielectric breakdown of ultra - thin gate oxides have been quantitatively investigated by separately controlling the amounts of hot electron and hot hole injection using substrate hot hole ( shh ) injection method. the changes of threshold voltage have been discussed under different stress conditions
主要研究結果如下：首先，利用襯底熱空穴（ shh ）注入技術分別控制注入到超薄柵氧化層中的熱電子和空穴的數量，定量研究了熱電子和空穴注入對超薄柵氧化層擊穿的影響，討論了不同應力條件下的閾值電壓變化。 -
Compared with green light - emitting device, blue oled has many problems such as brightness, efficiency, stability, and color saturation, in this study we investgaited the blue oleds systemically : 1 ) double heterosturcture oled was charaterized. due to the introducing of electron transport layer alq3 and hole - blocking layer balq3, the energy matching was more reasonable and the carrier injecting was more effective in the double - layer device. the maximum efficiency and luminance of this device attained to 1. 90 lm / w and 10, 000 cd / m2, respectively
其次，由於一直以來藍光oled器件的研究處于相對落後的狀態，其發光亮度、效率、穩定性和色純度都無法綠光器件相比，所以本論文在以下幾個方面對藍光器件的性能進行了系統的研究: 1 ）研究了雙異質型藍光oled器件，由於本研究引入了空穴阻擋層，使得載流子的復合和激子的擴散被限定在發光層內，器件的發光效率達到了1 . 90lm / w ，最大亮度達到了10000cd / m2 ，比傳統結構器件的效率和亮度提高了約一個數量級; 2 ）制備了結構為ito / npb / balq3 / alq3 / mg : ag的oled器件，研究發現，當改變各有機層厚度時，器件的電致發光光譜發生了從綠光到藍光的移動。 -
Electron - hole pairs are created by photo - excitation in the nanoscale silicon units, and then recombined radiatively in the thin oxide layers, giving a green or red pl through the luminescence centers outside the nanoscale
不摻sb的szoz與ax層中的發光中心發射的光子能量為2 zcv ，摻sb的sfloz與引x層中的發光中心發射的光子能量為1 -
Titanium dioxide is a semi - conductor with wide band gap, and its photocatalysis operates only when it is irradiated under the ultraviolet radiation of sunlight, and also, the electron hole of tio _ 2 has very high reunited rate
但由於tio _ 2為寬禁帶半導體，對太陽光的利用僅局限於紫外部分，並且tio _ 2的光生電子空穴復合幾率很高。 -
The photocatalytic action of layered nanocomposite semiconductor is based on the charge rapidly transferring from guest to guest or from guest to host layer to decrease electron - hole recombination, so as to improve photocatalytic activity. especially, this material can be recycled easily, and has potential applications in the area of environmental engineering
層狀光催化納米復合材料是當前光催化材料科學研究領域中最活躍的研究方向之一，它是基於層狀化合物層間區域的納米空間結構，將半導體和貴金屬等客體引入其層間區域形成納米粒子，從而制得光催化納米復合材料。
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