emission component 中文意思是什麼
emission component
解釋
發射子線-
With strong fluorescence lppp showed a broad pl and el emission with a maximum at 560nm and was regarded as a white light emitter with a strong blue component, thus allowing tunability over the full visible region. the enhanced light - emitting devices were fabricated. microcavity effects were observed both in el and pl
熒光效率高，並具有從紫外到近紅外十分寬闊的光致和電致發光光譜，最大峰值在560nm左右，是一種具有較強藍光成分的白光發光材料，允許在整個可見光范圍內進行調諧發光，可作為高穩定的發光材料。 -
The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate
採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。 -
The control system includes two modules, one named the input module which acquires data digitally, and the other, named the output module, controls the emission of the laser, the gating function of the single photon counting module ( spcm ) and the synchronization of the input and output modules. each of them uses a complex programmable logic device ( cpld ) as the core component, and is devided into three parts : the hardware circuit, the programming logic circuit and the software
該控制系統主要包括控制單光子發射、單光子探測器、數據採集接收系統的輸出系統和數據採集系統兩個模塊，它們都採用復雜可編程邏輯器件cpld作為核心功能晶元，由硬體電路設計、晶元編程和高級軟體編程三部分組成。 -
We researched the influences of systhesis temperature, heat preservation time, eu + concentration, reduction surrounding feeling and flux on luminescent properties of sral2o4 : eu2 + phosphors, optimized the experiment conditions and reduced systhesis temperature about 100 c. we found that the systhesized sample ' s luminescent brightness is better with increasing systhesis temperature, but the phase component is more complex. we found that the luminescence brightness of sample appear a increasing process at first, and then a reducing one with the raise of eu2 + concentration, it indicated that the luminescence brightness is not better if the eu2 + concentration is too high or low. we found that the systhesized sample can not bright at too long heat preservation time, and the luminescence brightness is lower at too short heat preservation time. we found that particle diameter is bigger, the wavelength of emission peak is longer
研究發現合成溫度高，合成樣品的發光效果好，但物相組成也較復雜； eu ~ （ 2 + ）離子在一定摻雜濃度范圍內，合成樣品的發光亮度先是出現一個提高過程，然後是一個降低過程，說明eu ~ （ 2 + ）離子濃度高或低都不利於合成樣品發光；保溫時間較長，合成樣品不發光，保溫時間較短，合成樣品發光效果不好，只有合適的保溫時間才能合成發光效果好的樣品；合成樣品的粒徑大小與發射峰的位置具有一定的關系，粒徑越大，發射峰越偏向長波方向；助熔劑對樣品的合成溫度和發光性能都有影響，助熔劑的量較低時，主要表現為助熔作用，對發光影響不大，助熔劑的量較高時，使得樣品發光亮度降低和余輝時間縮短；還原方式的不同，合成樣品的發光性能也不一樣。 -
2003 : can produce component meet the euro iii emission standards
2003 :可以生產符合歐iii級排放標準的部件
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