emitter current 中文意思是什麼

emitter current 解釋
發射極電流，射極電流
  • emitter : n. 1. 輻射體，輻射源。2. 發射體，發射極。
  • current : adj. 1. 通用的，流行的。2. 現在的，現時的，當時的。3. 流暢的；草寫的。n. 1. 水流；氣流；電流。2. 思潮，潮流；趨勢，傾向。3. 進行，過程。
  1. We have been considering the transistor with a current fed into the emitter.

    我們所研究的晶體管都是把電流饋入發射極。
  2. Standard test method of measurement of common - emitter d - c current gain of junction transistors

    結型晶體管共射極直流增益測量的標準試驗方法
  3. A particular over - current protection and drive circuit is given, the impact of resistance between gate and emitter on gate voltage dropping is discussed, and an adjustable gate - emitter resistance circuit is put forward

    設計了過電流保護驅動電路，討論了柵射集電阻對降柵壓過程的影響，並提出一種可變柵射集電阻電路。
  4. It is found that the current amplification coefficient strongly depends on the spin polarization of the electrons injected from the emitter to the base, the spin relaxation time and the width of the base

    自旋晶體管中的電流放大系數主要取決于注入基區的自旋極化電子的極化程度，基區中自旋的馳豫時間及基區的寬度。
  5. In the experiment we also observed negative differential resistance characteristics of gesi hbts with heavily doped base at high collector - emitter voltage and high current. a new interpretation to this phenomenon was given. this

    在實驗中我們還觀察到，在高vce和大電流下，重摻雜基區gesihbt出現負阻現象，我們對這一現象進行了新的解釋，認為這是由熱電負反饋導致的。
  6. Films of the cnx nanotube were produced by thermal decomposition on fe - coated si substrates, and their low field emission properties have been investigated. a high - emission current density of 1. 28ma / cm2 for an applied field of 2. 54v / u m was achieved, implying cnx nanotubes have better electron field emitter properties than the films of carbon tubes and bcn tubes do under same experiment conditions

    860熱解乙二胺，在沉積有鐵催化劑的矽片上生長出cn _ x納米管薄膜，並進行了低場致電子發射特性測試，外加電場2 . 54v / m時，發射電流達到1 . 28ma / cm ~ 2 ，比相同實驗條件下制備出的碳管、硼碳氮管薄膜的場致電子發射性能優越。
  7. In contrast with conventional thermo - ionic cathode, field emitter array ( fea ) cathode has many special advantages, such as room - temperature operation without a cathode heater, high current density, low power dissipation, excellent on / off isolation characteristics and instant turn - on characteristics

    與傳統的熱陰極相比，場發射陣列陰極具有許多獨特的優點，如無需加熱，可以在室溫下工作;電流密度比熱陰極高幾個數量級，並可工作在低電壓調制下;功耗低;極好的開關特性;可瞬時啟動等。
  8. With respect to a bipolar transistor, the condition in which the gate current equals or exceeds the value necessary to provide full emitter collector conduction

    就雙極型晶體管而言，其門電流等於或超過必要的值，使發射極集電極充分導通的一種狀態。
  9. Remember, the transistor ' s collector current is almost equal to its emitter current, as the ratio of a typical transistor is almost unity ( 1 )

    不要忘了，通常典型晶體管的系數幾乎是1 ，因此晶體管集電極電流與發射極電流也幾乎是相等的。
  10. Meanwhile, the relatioship between al ' s width of emitter and collector current, which called " extended electrode enhancing current ", has been presented

    同時，也給出了大面積鋪鋁的橫向pnp管中發射極電極鋁條寬度與集電極電流的關系，稱之為「電極擴展增強電流法」 。
  11. If we have control over the transistor ' s emitter current by setting diode current with a simple resistor adjustment, then we likewise have control over the transistor ' s collector current

    我們只要簡單的調節電阻，設定二極體電流，就能控制晶體管的發射極電流，於是也就能控制晶體管集電極電流。
  12. Well, the ratio works similarly : if emitter current is held constant, collector current will remain at a stable, regulated value so long as the transistor has enough collector - to - emitter voltage drop to maintain it in its active mode

    系數的作用與之類似：如果發射極電流保持恆定，只要集電極發射極電壓足以使其保持在放大區，集電極電流也將穩定保持。
  13. In the diagram, the output of the error amp is connected to the base of an npn transistor : when the error amp drives current into this transistor ' s base, it allows current to flow from collector to emitter, and that transistor in turn pulls current from the base of the pass transistor

    在這個圖里，誤差放大器的輸出端連接到了一個npn三極體的基極上：當誤差放大器輸出電流到了三極體的基極上，三極體允許電流從集電極向發射極流動，這個傳輸三極體工作時就是就是從基極吸取電流的過程。
  14. The vertical structure optimization through simulation of the new structure, low loss igbt ( lpl - igbt ) has been discussed in detail in this paper. in comparison with the prevalent igbt, lpl - igbt has not only the merit of transparent back emitter and high lifetime of carriers owned by npt - igbt but also the complex n7n + voltage sustain layer structure owned by pt - igbt. not only possesses lpl - igbt lower power loss but also the other capacities are no better than npt - igbt such as break down voltage, current capacities, safe operation area and cost

    與現有igbt相比較， lpl - igbt在結構上保留了npt - igbt中的透明發射區和高載流子壽命的本質優點，同時又具有pt - igbt中n ~ - n ~ +復合薄耐壓層的優點；在器件性能上， lpl - igbt不僅具有比npt - igbt更低的能量損耗（包括通態損耗和開關損耗） ，而且其餘性能如器件耐壓、電流密度、安全工作區以及製造成本等相對現有npt - igbt均有明顯改善。
  15. Therefore, if we have a way of holding emitter current constant through a transistor, the transistor will work to regulate collector current at a constant value

    於是，只要我們能讓晶體管的發射極電流保持恆定，它就能保持發射極電流為恆定值。
  16. In bjt devices, a small current flow at the base moderates a much larger current between the emitter and collector

    在bjt器件中，基極小的電流調節發射極和接收極之間大得多的電流。
分享友人
分享到 Line

分享到臉書