emitter layer 中文意思是什麼
emitter layer
解釋
發射極層-
On the base of these theory calculations, we passivated the front - surface both of different surface doping concentration solar cells by a thin layer of thermally grown sio2. the results show that the in heavy surface doping concentration cell is lower compared to the cell in light surface doping concentration. the majority of improvement in comes from the emitter surface passivation
接著採用sio2作為鈍化膜，從實驗上比較了在不同表面濃度下單晶硅太陽電池的鈍化效果，結果表明在高表面濃度下其開路電壓比低表面濃度下的開路電壓低，這開路電壓的提高主要來源於降低了前表面復合。 -
Measured results showed that the dl - a device with its structure as following ito / npb / alq / mg : ag was far more superior to sl device with the structure of ito / alq / mg : ag because the dl - a device better balanced energy band between each each layer and the mobility of carriers ( electrons and holes ), which led to the combination of carriers taking place in the bulk of emitter and avoided the excitons being eliminated by the electrodes which easily occurs in sl devices. as to the doped devices, measurements demonstrated an excellent device with its maximum brightness was 25000cd / m2
研究結果表明， dl - a型雙層結構器件ito / npb / alq / mg : ag的各項性能指標明顯優于單層器件ito / alq / mg : ag ，因為前者有更好的載流子遷移率匹配以及能帶匹配，因此平衡了復合的載流子數目，並且能將復合區有效控制在發光層內部，有效避免了表面的大量缺陷以及電極猝滅效應，提高了載流子的復合效率，從而提高了器件的發光性能。 -
The vertical structure optimization through simulation of the new structure, low loss igbt ( lpl - igbt ) has been discussed in detail in this paper. in comparison with the prevalent igbt, lpl - igbt has not only the merit of transparent back emitter and high lifetime of carriers owned by npt - igbt but also the complex n7n + voltage sustain layer structure owned by pt - igbt. not only possesses lpl - igbt lower power loss but also the other capacities are no better than npt - igbt such as break down voltage, current capacities, safe operation area and cost
與現有igbt相比較， lpl - igbt在結構上保留了npt - igbt中的透明發射區和高載流子壽命的本質優點，同時又具有pt - igbt中n ~ - n ~ +復合薄耐壓層的優點；在器件性能上， lpl - igbt不僅具有比npt - igbt更低的能量損耗（包括通態損耗和開關損耗） ，而且其餘性能如器件耐壓、電流密度、安全工作區以及製造成本等相對現有npt - igbt均有明顯改善。 -
Excitation at 493nm, the emission peaks of pff5 in chloroform solution is 540nm and 580nm. using pff5 as the emitter, an efficiency single layer led has been fabricated. 3
利用pff5作為發射層，研製單層高效的聚合物發光二極體，研究器件的伏安特性、電壓亮度特性和電致發光光譜。
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