emitting material 中文意思是什麼

The polyester fibre of resisting bacterium is one without which people can t live in modern times, but how to restrain the bacterium propagating excessively and keep people in health is a most important goal that fabrics and clothing industry are striving for. fibre of resisting bacterium can kill the bacterium effectively with the ratio of more than 99 % and it can restrain microbes. the polyester fibre of resisting ultraviolet radiation is also widely used. with the decreasing of ozonospheres in the atmosphere, there are more ultraviolet radiation in the sunlight which do harm to our skin, especially for those men working outdoors, it is more important to think about the way to lessen the harm. the polyester of burning - resisting has attracted more attention at home and abroad and burning - resisting textiles has been advanced definitely by law in many countries. our nation has also made strict claims in some special areas, such as fabrics in vehiciles and vessels, decorative fabrics in hotels. the everlasting burning - resisting fibres and textiles are badly needed. infrared ray fibre is also a new functional one that can absorb and reflect infrared ray after being processed physically. it s functions include physical therapy wet - ejecting and bacterium - restraining. this warm - preserving material can absorb the emitting heat from our bodies, at the same time it can also absorb and reflect the needed 4 - 14 urn wavelength ultraviolet radiation and accelerate netaboiism. fibre of resisting infrared ray is important in military areas

抗菌纖維具有永久的抗菌性，對金黃色葡萄球菌、大腸桿菌殺菌率大於99 ，能有效抑制細菌繁殖，起到抗菌防臭作用；抗紫外線聚酯纖維的用途也是異常廣泛的，隨著大氣層中臭氧層的日漸稀薄，日光中的紫外線日益增加，對人體皮膚形成極大危害，尤其對于長期從事野外工作的人，因此設法減少紫外線對人體的傷害顯得尤為重要；阻燃聚酯纖維則是一種倍受國內外人士密切關注的纖維，紡織品阻燃在許多國家已有明確法令規定，我國也逐漸在某些特殊使用范圍做嚴格要求，如車船內用紡織品，高級賓館的內裝飾織物等，而且具持久性阻燃性的纖維和織物是現在更為需要的，真可謂用途非常廣泛；遠紅外纖維也是一種經過物理改性后具有吸收並反射遠紅外線的新型功能性纖維，是一種具有優良理療功能、熱效應功能和排濕透氣抑菌功能的新型紡織材料及保溫材料，能吸收人體自身向外散發的熱量，吸收並反射回人體最需要的4 14 m波長的遠紅外線，促進人體的新陳代謝；抗紅外線纖維，則在軍事上有著重要的作用。

Although many achievements have been acquired in oled structure material, production technology, drive methods, oled technology is just at the beginning, oled has given an equal chance for every company and country, and it is very important for our country to develop displaying technology of our own. the research direction of oled is managing to improve the device lifetime, at the same time found a perfect production technological flow and the global standard production mode. it is still a arduous mission that we want to live up to a batch production of oled displays in the future some years. active matrix organic light emitting diode ( am - oled ) adopts a circuit structure based on matrix addressing, and its driving circuit includes pixel driving circuit and peripheral driving circuit

在文中，首先，分析和研究了有源oled的像素驅動電路，闡述了amoled顯示屏及其周邊驅動電路的結構和原理;其次，提出了qvga解析度的有源oled顯示屏列電極數據引線的分塊（ block ）方法，確定屏上驅動電路所需要的控制信號之間時序關系和幅值要求;最後，以fpga控制器的設計為核心，對外圍控制ic進行了具體設計，建立控制器電路模塊模型和演算法流程，通過quartus軟體對其內部的各個電路模塊進行綜合設計和模擬，得到了正確的模擬波形，完成了解析度為qvga （ 320 3 240 ）的amoled專用驅動電路的設計。

Silicon ( si ) is the leading material of microelectronic devices, but the nature of indirect band gap of si hinders its applications in integrated optoelectronics. to develop si - based optoelectronic integration by coupling the mature technology of si microelectronic integration with si - based light - emitting material will essentially meet the increasing demand of the great progress in the information technology

硅是微電子器件的主要材料，但硅的間接能隙特性嚴重製約了其在光電子領域的應用，如果能在硅基材料的基礎上制備發光材料，就可利用已有成熟的硅集成技術發展硅光電子集成，從而有可能完全改變信息技術的面貌。

Aln is an important compound semiconductor material with wide band - gap, which has wurtzite structure too. because of their many excellent physical properties, aln thin films were applied in blue - uv emitting materials, epitaxy buffer layer, soi material and saw device with ghz band

Aln具有許多優異的物理性能，在藍光、紫外發光材料及熱釋電材料、外延過渡層、 soi材料的絕緣埋層和ghz級聲表面波器件等方面有著重要的應用。

Porous silicon ( ps ) is a new type silicon - based material developed in recent years, which has different properties compared with the crystalline materials. porous silicon can luminescence efficiently across the whole range from the near infrared, through the visible region, to the near uv region. this characteristic makes it possible to fabricate light - emitting devices and solve the key problem of the optoelectronic integrated circuit ( qeic ), opening up the bright future for the vlic

多孔硅（ ps ）是近年來發展起來的一種新型硅基材料，具有與單晶硅材料大不相同的特性，例如，多孔硅可在近紅外和可見，甚至近紫外區輻射強烈的熒光，使得它可用來製造發光器件，並可望在解決光電子集成電子學的關鍵問題，為製造帶有光源的大規模集成電路等方面開辟新的途徑。

A large number of attempt and painstaking experiment have been done in this paper according to existing project. we also do lots of chemical and electrochemical etching research in material of lab6, and find out three kind of methods to produce the field emitting cold cathode including reactive ion etching ( rie ) with oxygen, wet process etching and electrochemical etching. through produce some field emitting cold cathode single tip including lab6 field emitting cold cathode, molybdenum field emitting cold cathode, tungsten field emitting cold cathode, tungsten rhenium field emitting cold cathode, molybdenum covered with lab6 film field emitting cold cathode

而且，目前可借鑒的參考文獻較少，圍繞著前人做過的方案，本文做了大量工作，在已有文獻介紹的基礎上，結合原有的理論和實踐基礎，摸索出了包括高溫氧作用反應離子（ rie ）刻蝕法、濕法腐蝕法和電化學腐蝕法在內的三種制備工藝，運用電化學腐蝕工藝成功制備了單尖的六硼化鑭場發射冷陰極尖錐、鉬場發射冷陰極尖錐、鎢場發射冷陰極尖錐、鎢錸合金場發射冷陰極尖錐以及有六硼化鑭薄膜覆蓋的鉬場發射冷陰極尖錐。

In this paper, micro - cavity semiconductor laser ( mcsl ) with pillar vertical - cavity surface - emitting structure ( vcsel ) which has potential applications in optical communication and optical interconnect is theoretically analyzed, the calculation model that used to discuss the modal performance of rectangular columnar and cylinder vcsel with oxidized aperture is established by using vector field model. the numerical simulations in the case of cylinder structure show oscillating wavelength and threshold gain against inside and outside radius of laser, the layer refractive index and pair number of bragg mirror, thickness, position and oxidized material ' s refractive index of oxidized aperture, in detail. more practically, considering dos shell of laser as non - perfect one, or supposing that dos shell is separated from the laser, we can obtain more significative results

本工作以矢量場模型出發，對具有誘人應用前景的柱形垂直腔面發射結構（ vcsel ）的微腔半導體激光器（ mcsl ）進行了理論分析，建立了用於分析方柱形和圓柱形結構具有氧化孔徑層的激光器的模式特性的理論模型；對圓柱形結構情況進行了數值模擬，得到了振蕩波長、閾值增益隨激光器內外半徑、 bragg反射鏡層折射率、周期數以及氧化孔徑層厚度、位置和氧化物折射率的詳細變化規律；為使理論計算更接近實際，將外加金屬包殼視為非理想導體，或將金屬包殼與激光器結構隔開，分別對這兩種情況下的結果進行了討論。

The image source is the hard core of hmd, the r & d of lcos ( liquid crystal on silicon ) and oled ( organic light emitting diode ) microdisplays needs to conquer many difficulties which related with material, fabrication, electronic circuit, optics and so on, these means a high technology barrier. the research on their control and drive technology is essential for the performance and operation, it is also very helpful for us to get our own intelligence property during the process of the hmd system design. the first chapter in this paper makes a full scale introduction about the concept, history, configuration & structure of hmd

Hmd的像源器件（即微型顯示晶元）是整個hmd系統中最重要的組分，現階段的主流像源「硅基液晶」 （ liquidcrystalonsilicon ， lcos ）與「有機發光」 （ organiclightemittingdiode ， oled ）微顯晶元在研發中需克服材料、工藝、電路、光學等諸多方面的困難，有較高的技術門檻，其驅動及控制技術的研究是整個hmd系統中不可或缺的一環，對hmd的性能、功能及使用方式等具有決定性作用，這同時也是開發具有自主知識產權樣機的必備基礎。

The main work can be summed up as follows : firstly, we studied the thermal - field properties of vcsels, and analyzed the influences of current spreading, material parameters and operating conditions on the temperature distributions. secondly, we began with the electrode voltage and calculated the equipotential s distributions, compared the distributions of voltages and current densities in different depths of vcsels, and then studied the influences of the oxide - confining region with different position or thickness, and the different sizes of the gain - guided aperture and emitting window on the distributions of the injected current density, carrier concentration and temperature in the active region. thirdly, we realized the coupling of electricity, optical and thermal - fields, worked out the threshold voltage, calculated the distributions of the injected current density, carrier concentration and temperature under different offset voltages, and analyzed the impacts of temperature profile and carrier density on the refractive index, fermi levels and optical - field

具體工作可以概括如下：首先，研究了vcsel的熱場特性，分析了電流擴展，材料參數和工作條件對于溫度分佈的影響；其次，從電極電壓入手，計算出激光器中的等勢線分佈，並對不同深度處的電壓和電流分佈進行比較，研究了高阻區的不同位置和不同厚度、限制層和出射窗口半徑的大小對電流密度、載流子濃度和溫度分佈的影響；再次，實現了電、光、熱耦合，求出了閾值電壓，計算了不同偏置電壓下的電流密度分佈、載流子濃度分佈和熱場分佈，分析了溫度和載流子濃度變化對折射率、費米能級和光場的影響；最後，給出了考慮n - dbr和雙氧化限制層時激光器中的等勢線分佈，分析了n - dbr和雙氧化限制層對vcsel電流密度、載流子濃度、溫度和光場分佈的影響。

At present, the material of emitting cathode is mostly present with big escaping powers low reliability 1ow uniformity and emission capability

摘要目前，陰極發射體材料多存在逸出功大，可靠性及均勻性低，發射性能低、不能自動調節活性物質更替的速度等方面的問題。

At present, lots of material and preparation methods of field emitting cold cathodes are being developed. but the material of emitting cathode is mostly present with big escaping power 、 low reliability 、 low uniformity and emission capability

目前，場發射陰極材料多種多樣，但都存在逸出功大，穩定性及均勻性不理想，發射性能低等方面的問題。

Lab6, as one kind of better material, is so perfect that it is important to research its chemical etching in the arts and crafts to be used in the preparation of emitting cathode, we simply state the chemical etching technical research in material of lab6 and have gainded graphics surface of lab6

而對六硼化鑭的化學腐蝕在以其為陰極的陰極發射體制備工藝中起著至關重要的作用，本文簡述了對材料的化學腐蝕工藝的初步研究，並得到了圖形化的六硼化鑭表面。

This lamp is the sources of energy with monocrystalline silicon solar energy cell or polycrystalline silicon solar energy cell ; the storage battery is nickel hydrogen battery or nickel cadmium battery ; that lamp holder and the lamp pole adopts casts aluminium or the stainless steel material manufacturing ; the lampcover adopts the toughened glass manufacturing, and the light source is the light source with high brightness led ' s light emitting diode ; the colour can be divided into the white and yellow, redness, orange, green and blue and seven colours become light

該燈以單晶硅太陽能電池或多晶硅太陽能電池為能源；蓄電池為鎳氫電池或鎳鎘電池；燈座和燈桿採用鑄鋁或不銹鋼材料製造；燈罩採用鋼化玻璃製造，光源以高亮度led發光二極體為光源；顏色可分為白色、黃色、紅色、橙色、綠色、藍色和七彩變光。

Carbon nanotubes ( cnts ) have attracted great attention in material science and technology for their semi - one - dimension structure, good electrical conductivity, excellent chemical and mechanical properties. especially for their high aspect ratio and emitting electron at low voltage, cnts have been considered as one of the most promising material for field electron source

碳納米管具有準一維的結構、良好的導電能力、化學穩定性和機械強度，由於其極高的長徑比而且能在較低的宏觀電場下發射電子，因此被認為是較為理想的場發射材料。

Active emitting material

放射活性材料

Due to its intrinsic merits, such as wide band gap, high electron saturated drift velocity, high melting point, good coefficient of thermal conductivity, anti - radiation and good chemical stability, gallium nitride as a direct band gap semiconductor has become the promising material for the application of short - wave light - emitting devices and high temperature, high frequency and high power electronic devices

Gan是直接帶隙半導體材料，以其禁帶寬度大、電子飽和漂移速度大、熔點高、熱導率高、抗輻射能力強和化學穩定性好等優點成為製造短波長光發射器件及高溫、高頻、大功率電子器件的理想材料。

However, fc derivatives could not be used as functional molecules directly in many high - tech fields such as nonlinear optics, light emitting devices, sensors and so on. only when they are organized with some structure or dispersed homogeneously into solid matrix to form functional material, their function could be fully brought into play

在許多領域，如非線性光學、發光器件、傳感器等，二茂鐵衍生物並不能直接應用，但將具有光電活性的二茂鐵基團引入到兩親分子中，形成特定性能的成膜分子，就能真正發揮其作用。

Investigations are made of porous sic ( psc ), both as a potentially attractive material for fabricating uv light emitting diodes ( leds ), efficient photodetectors and hydrocarbon gas sensors, and as a novel substrate for epitaxy, chiefly because of its much higher photoluminescence ( pl ) emission efficiency than that from bulk sic

作為一種有潛在吸引力的材料，多孔sic （ psc ）可以用來制備紫外發光二極體、靈敏光探測器、碳氫氣體探測器和新穎的外延材料，目前被廣泛研究。引起大家感興趣的一個原因就是psc比晶體sic有更高的發光強度。

The whole performance of device depends on the capability of field emitting cold cathodes which act as the kernel of all kinds of vacuum micro - electronics device. people take much measure constantly to improve the whole performance of device through mending the cathode structure and optimizing cathode preparation methods. among them, finding new material of emitting cathode is a central way to enhance the performance which be given a favorable condition offered by development of science and researching of new material

人們通過不斷的改進陰極結構，優化陰極的制備工藝等各種措施和手段來提高陰極的總體性能，其中，新材料在陰極發射體中的運用是提高陰極性能的主要途徑之一，近代科學技術的高速發展以及對新材料的進一步開發和研究為場發射陰極性能的改善提供了廣闊的發展空間和開發潛力。

This thesis holds that via the material betterment measures it can greatly decrease material cost, sufficiently jam the losing, emitting and spillage

本論文認為，通過物料改進措施的實施，大大降低了物料成本，充分堵塞了物料管理過程中的跑、冒、漏。