etching angle 中文意思是什麼

etching angle 解釋
蝕痕角
  • etching : n. 1. 蝕刻法；蝕刻（銅）版畫；蝕鏤術。2. 蝕刻畫，蝕刻版，蝕刻版印刷品。
  • angle : n 【英史】盎格魯人〈cf Angles〉。n 1 角，隅，角落；棱，嬗角。2 【數學】角，角位，角的度數。3 【機...
  1. Influence of ion - beam etching incidence angle on slope of pattern sidewall

    光線斜入射對光柵常數測量的影響
  2. The feasibility that kaufman ion source is applied in reactive ion beam etching is discussed. etching characteristics of materials, including pr, cr, quartz, are investigated. the etch rate and mechanisms of such materials are measured and analyzed as a function of ion energy, ion beam density and ion incidence angle in pure ar and chf3, respectively. the etch rate has shown a square root dependence on variation versus

    深入研究了光刻膠、鉻薄膜、石英等光學材料離子束刻蝕特性，分別以ar氣和chf3為工作氣體，研究光刻膠、鉻薄膜、石英等的刻蝕速率隨離子能量，束流密度和離子入射角度的變化關系，得到刻蝕速率與影響因素的擬合方程，為掩模的製作工藝路線提供了實驗依據和理論指導。
  3. In the present works, a self - consistent model describing the dynamics of radio - frequency ( rf ) sheath was established. the effects of collisions on the rf sheath dynamics, distributions of ion energy and angle incident on the substrate and the etching profiles were investigated numerically

    本文建立了一套自洽的碰撞射頻等離子體鞘層理論模型，系統地研究了碰撞效應對等離子體鞘層的物理特性、離子入射到基板上的能量分佈和角度分佈以及刻蝕剖面的影響。
  4. In the section of fabricating technology, i first discuss the ion beam technology. through the analysis of the effects of each parameter on the surface smoothness, profile fidelity and linewidth resolution in the process of ion etching, the suitable angle of incident ion beam, ion energy, density of ion beam and time of etching are selected combining the actual status of the mask

    在製作工藝的研究方面，首先研究了離子束刻蝕技術，通過對離子束刻蝕過程中各個參數對刻蝕元件的表面光潔度、輪廓保真度和線寬分辨的影響分析，結合掩膜的實際情況選擇出了合適的離子束入射角、離子能量、束流密度和刻蝕時間等參數。
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