etching plasma 中文意思是什麼

etching plasma 解釋
等離子蝕刻法
  • etching : n. 1. 蝕刻法；蝕刻（銅）版畫；蝕鏤術。2. 蝕刻畫，蝕刻版，蝕刻版印刷品。
  • plasma : n. 1. 【生理】血漿；淋巴液。2. 【生物學】原生質。3. （做藥膏用的）膏漿。4. 【礦物】半透明的綠玉髓。5. 【物理學】等離子（體）；等離子區。
  1. Plasma cyro - etching of high aspect ratio silicon crystal structures

    等離子體低溫刻蝕單晶硅高深寬比結構
  2. Etching of sapphire with inductively coupled plasma of cl2 bcl

    刻蝕藍寶石研究靠
  3. Microwave electron cyclotron resonance ( mwecr ) cvd is a newly developed technique for plasma processing and materials fabrication, such as plasma etching and films deposition

    本論文介紹了我們對ecr等離子體cvd系統的測試、 bn薄膜的制備和薄膜光學特性研究。
  4. Yak hairs were treated by the microwave electron cyclotron resonance plasma reactive ion etching ( ecr - rie ) equipment to improve its property of weave

    摘要採用微波電子迴旋共振等離子體反應離子刻蝕（ ecr - rie ）裝置對氂牛毛纖維進行表面改性，從而改善氂牛毛的可紡性。
  5. Influence of process parameters on the etching rate in inductively coupled plasma etcher

    等離子體刻蝕中工藝參數對刻蝕速率影響的研究
  6. Magnetization magneto - microwave plasma etching system

    磁場微波型等離子體蝕刻系統
  7. Hardware and software design for the inductively coupled plasma etching machine " s system are also presented

    介紹了plc控制等離子體刻蝕機的硬體系統和軟體系統的設計。
  8. This paper studies the application of inductively coupled plasma ( icp ) technology to the etching compound semiconductor insb - in film. by means of single probe and double probe, the ion density and electron temperature of chamber ( 30mm and 50mm in height respectively ) under varied process condition were diagnosed. the spatial distribution of the axial position of the two parameters and the varied curve that the two parameters varies with the power and air pressure are obtained

    利用單探針和雙探針診斷30mm高反應室和50mm高反應室在各種工藝條件下的離子密度和電子溫度，得到這兩個參數在反應室軸向位置的空間分佈、隨功率和氣壓的變化曲線、頂蓋接地和反應室體積對它們的影響，結果表明離子密度為10 ~ 8 10 ~ （ 10 ） cm ~ （ - 3 ） ，電子溫度在4 10ev之間；當頂蓋接地時，該處的等離子體密度明顯大於不接地；在同樣條件下， 50mm高反應室內的離子密度明顯大於30mm高反應室。
  9. Due to great advantage of the excimer laser in photoelectron material, photoelectron technology research, so in this thesis, a xecl excimer laser is designed in order to solve some problem in semiconductor film, cmr film, quartz film and other kind of film application, optical etching field, interaction between laser and material, material plasma study. the parameters of the excimer laser is e also measured and analyzed

    因此本文以氣相沉積、外延生長、巨磁薄膜、金剛石及其它薄膜制備及后續的光刻，激光與物質的相互作用，等離子體研究為目的，研製獲得了激光脈寬18ns ，單脈沖能量150mj ，矩形光斑大小2cm 1cm ，束散角3mrad ，最高重復頻率5hz的xecl準分子激光器。
  10. This paper discusses the surface etching of polyester thread through application of plasma and alkali deweighting to enhance the size adhesion to polyester thread and improve the abrasion - resistance of the sized polyester thread

    摘要探索了應用堿減量、低溫等離子體處理方法對滌綸股線表面進行刻蝕處理，以改善上漿前滌綸表面界面，增強漿液對滌綸股線的黏附性，提高上漿后滌綸股線的耐磨性的研究。
  11. The reactor is capable of working in the rie ( reactive ion etching ) mode and also in the plasma etching mode

    反應腔擁有在rie （反應離子刻蝕）模式和等離子刻蝕模式下工作的能力。
  12. Influence of etching parameters on sidewall roughness of silicon based waveguide etched by inductively coupled plasma

    脊形波導側壁粗糙度的影響
  13. In the plasma - etching mode the passivation layer that is formed on the surface is likely to be thicker than in the case of rie

    在等離子刻蝕模式下，表面形成了比使用rie情況下更厚的鈍化層。
  14. Inductively coupled plasma etching system

    感應耦合型等離子體蝕刻系統
  15. Barrel type plasma etching system

    圓筒型等離子體蝕刻系統
  16. The results show that amorphous carbon films have high etching resistance against oxygen plasma, and etch rates of the films correlated not only with etching processing parameters, also with deposition conditions

    結果表明非晶碳膜對于氧離子體具有高的抗刻蝕性，其刻蝕率不僅與刻蝕的過程參量有關，而且決定於膜的沉積條件。
  17. Plasma etching has been widely used in the etching process of si devices. now the study is focused on the microfabrication of compound semiconductor

    等離子體干法刻蝕在硅器件的微細加工中已經得到廣泛應用，目前研究的焦點集中在化合物半導體。
  18. In a word, the two type of voa both have valuable applicability and potential market. the author have done numerous processing to work out new processing such as polymer coating and cure and triple - layer - metal film vaporing. other new processing, polymer ultra - violet ( uv ) cure and inductively - coupled plasma ( icp ) etching were studied

    作者經過反復的工藝實驗，確定了聚合物波導塗膜和固化、三層金屬電極蒸發和腐蝕等新工藝的參數，並得到了聚合物紫外固化、等離子體刻蝕等新工藝的初步數據。
  19. Inductively coupled plasma etching technology and its application in optoelectronic devices fabrication

    刻蝕技術及其在光電子器件製作中的應用
  20. Deposition and etching of amorphous carbon films in ecr plasma

    離子體沉積和刻蝕非晶碳薄膜
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