etching time 中文意思是什麼

etching time 解釋
刻蝕時間
  • etching : n. 1. 蝕刻法；蝕刻（銅）版畫；蝕鏤術。2. 蝕刻畫，蝕刻版，蝕刻版印刷品。
  • time : n 1 時，時間，時日，歲月。2 時候，時刻；期間；時節，季節；〈常pl 〉時期，年代，時代； 〈the time ...
  1. The silicon plates are formed reverse four wimble array in koh solution by wet - etching technology. then the electrochemical etching experiments are done in three poles electrobath. and some technology questions such as heat oxygenation, light etching, wet etching and electrochemical etching have been analyzed. at the same time sample appearances are analyzed by scanning electron microscope. according to current burst model theory, the electrochemical deep holes etching mechanism are analyzed

    在三極電解槽中，進行了電化學深刻蝕的探索性實驗。對氧化、光刻、濕法刻蝕和電化學刻蝕中的工藝問題進行了初步的理論和實驗研究，同時，採用sem對實驗樣品進行了形貌分析，並採用電流突破模型對電化學深孔刻蝕機理進行了理論分析。
  2. In this paper, the flow pattern defects ( fpds ) were revealed by secco etchant and their shape, distribution on wafer and tip structure were studied in details by optical microscope and atomic force microscope ( afm ). the relationship between etching time and the tip structure of fpds was also discussed. furthermore, by studying the effect of rapid thermal annealing ( rta ) on the density of fpds in ar, the annihilation mechanism of fpds was discussed in this paper

    本文將cz硅單晶片在secco腐蝕液中擇優腐蝕后，用光學顯微鏡和原子力顯微鏡對流動圖形缺陷（ flowpatterndefects ， fpds ）在矽片中的形態、分佈及其端部的微觀結構進行了仔細地觀察和研究，並討論了腐蝕時間對fpds缺陷端部結構的影響；本文還通過研究ar氣氛下快速退火（ rapidthermalannealing ， rta ）對fpds缺陷密度的影響，初步探討了fpds的消除機理。
  3. Moreover, the octahedron voids would change to shallow orbicular pits and vanished at last if the etching time was prolonged. our results were contrasted to the result that the fpds are interstitial type defects concluded by takeno et al and support the views that the fpds are vacancy - type defects

    本次的實驗結果與takenold等人對fpds的研究結果大大相反，他們認為fpds的端部是一些間隙型的位錯環，而本實驗的實驗結果卻支持了fpd缺陷屬空位型缺陷的觀點。
  4. Theoretical analysis and experimental results show that the mentioned methods above can simplify the process condition, improve the etched effect, shorten the etching time and obtain more even etched surface. 2 ) laser - assisted wet sequencially - selective - etching method has been developed this method can be applied when the corrosion solution is mixed solvent

    2 ）提出了激光化學誘導液相次序選擇腐蝕法該方法適用於腐蝕液為混合溶劑的情況，例如， h2so4 - h2o2對gaas基片進行腐蝕時，先採用h2o2對基片進行氧化腐蝕處理，再利用h2so4進行激光化學腐蝕。
  5. This paper mainly aims at the strategic demands for large - aperture lightweight mirror proposed by high - tech development. its main research contents are : select material blank for lightweight mirror according to physical and chemical properties of optical glass ; analyze and calculate the deformation quantity of the mirror with finite element method ; design and optimize mirror body structure of 400 lightweight plane mirror and 450 lightweight spherical mirror, analyze glass cutting principle, design specisl - use grinding wheel structure, select reasonable technological parameters to implement the processing of weight reduction holes on 400 plane mirror ; analyze etching mechanism of hydrofluoric acid, look for the technological parameters such as the optimal acid concentration and etching time etc. ; eliminate the stress of weight reduction holes and micro - cracks on 400 lightweight plane mirror ; discuss the processing principle and

    本論文的研究主要是瞄準國家高技術對大口徑輕型鏡的戰略需求而開展的。主要研究內容是：根據光學玻璃的物理與化學性能，選擇輕型鏡坯材料；用有限元法對鏡子的變形進行分析、計算，找出變形規律，優化設計400mm輕型平面鏡、 450mm輕型球面鏡鏡體結構；分析玻璃切削原理，設計專用磨輪結構，選擇合理工藝技術參數，完成400mm平面鏡輕量化減重孔的加工；分析氫氟酸腐蝕光學玻璃機理，尋找最佳酸濃度、腐蝕作用時間等工藝參數，實現400mm平面鏡減重孔應力與微裂紋的消除；討論分離器加工原理和工藝技術特點，完成400mm平面輕型鏡面形加工。
  6. In the section of fabricating technology, i first discuss the ion beam technology. through the analysis of the effects of each parameter on the surface smoothness, profile fidelity and linewidth resolution in the process of ion etching, the suitable angle of incident ion beam, ion energy, density of ion beam and time of etching are selected combining the actual status of the mask

    在製作工藝的研究方面，首先研究了離子束刻蝕技術，通過對離子束刻蝕過程中各個參數對刻蝕元件的表面光潔度、輪廓保真度和線寬分辨的影響分析，結合掩膜的實際情況選擇出了合適的離子束入射角、離子能量、束流密度和刻蝕時間等參數。
  7. The etching reactor is developed to obtain reproducible tapers of desired diameter and length. an approach for on - line monitoring of etching using the power meter is demonstrated. based on the experimental data, the relationship between the leak - out optical power and change of time and also that between the leak - out power and width of the remaining width of cladding, and the fiber length exposed to hf acid are summarized

    本文對氫氟酸腐蝕法製作光纖耦合器的反應裝置和實驗系統進行了設計，介紹了具體的實驗過程及其注意事項，通過對實驗結果進行分析總結，得出泄漏光功率隨腐蝕時間的變化關系以及泄漏光功率與包層剩餘厚度和腐蝕長度的關系。
  8. Pre - exposure bake ' s time has been extended in light etching course for favorable patterns

    在光刻工藝過程中，適當延長前烘時間可得到良好的顯影圖案。
  9. Meanwhile, the paper also discusses some methods to improve the polishing processes, i. e. using the liquid - drop method to monitor the remaining width of the cladding in time. finally, the feasibility of the three kinds of coupling method ? fbt, hf acid etching and the side - polishing are discussed and compared

    最後，對熔融拉錐法、氫氟酸腐蝕法和邊研磨法三種方法的可行性進行了分析與比較，得出一套比較適用於光纖竊聽的設計方案。
  10. For example, when the gaas substrate is etched by h2so4 - h2o2, h2o2 is adopted to oxidate the substrate first, then the substrate was etched by means of laser wet etching in h2so4 solvent. theoretical analysis and experimental results show that compared with the mixed - solvent - etching, more smooth etched surface can be obtained by this method ; and because the substrate is preprocessed, time of laser induced wet - chemical etching

    理論分析和實驗結果都表明，次序選擇腐蝕法可以有效地提高腐蝕表面的均勻性;因先對基片進行化學腐蝕處理，大大縮短了激光化學腐蝕的時間;使溶劑先後分別作用於基片，可以提高激光化學腐蝕溶劑配比的精度容差，使激光化學腐蝕控制和分析更加簡單。
  11. A different approach, named " two step growth approach " has been applied to fabricate an 8x8 photodiode array in the first time. the micro - processing procedures of this photodiode array including standard photolithography, a number of metallisation, wet - chemical etching and sic2 deposition for insulation were developed in this study

    首次採用「兩步法」制備出了新穎的8 8zns肖特基光電二極體陣列，詳細研究並確定了制備該器件的標準光刻、金屬沉積、濕化學腐蝕、 sio _ 2絕緣層沉積等一系列微電子處理工藝。
  12. For the first time, an integrated waveguide turning mirror ( 1wtm ) in soi was put forward and realized. using anisotropic etching technology with koh solution, the mirror surface was very smooth with root square roughness only 5. 19nm, and the mirror was vertical to the wafer surface because of the crystalline relationship

    論文首次設計並製作了soi上集成波導式轉彎微鏡（ iwtm ） ，利用硅的koh各向異性腐蝕特性製作出的微鏡表面非常光亮，均方根粗糙僅為5 . 19nm ，並且由於鏡面是腐蝕出的晶面，其與晶片表面非常垂直。
  13. The sem and the pl observation showed that the surface of porous silicon prepared by pulsed etching was more uniform and the si particles were smaller. the intensity of pl formed by pulsed etching method was enhanced and the peak had blue shift comparing that formed by dc electrochemical etching method. at the same time, it was observed that the smaller the dimension of the porous silicon, the broader energy gap of the porous silicon

    採用脈沖和直流電化學腐蝕兩種方法制備多孔硅，對這兩種方法制備的多孔硅樣品進行掃描電鏡和熒光光譜的測量，發現脈沖腐蝕制備的多孔硅樣品比直流腐蝕制備的多孔硅樣品表面均勻、顆粒尺寸小、發光強度大，而且發光峰位有明顯的藍移現象。
  14. Etching time has been extended in wet etching course

    在電化學刻蝕過程中，需增加循環裝置。
  15. After a slight chemical etching, carbon cluster tracks, were observed for the first time by atomic force microscope ( afm ) and the clear images were obtained. the track structures for c1 - c4 were analyzed and compared by the offline - analyzing program, of afm. the interaction of the cluster - and solid was discussed

    然後，用其轟擊固體徑跡探測器cr - 39 ，對cr - 39經過腐蝕之後，用先進的原子力顯微鏡（ afm ）對碳微團簇徑跡進行了觀測，得到了清晰的圖像。
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