extreme ultraviolet lithography 中文意思是什麼

extreme ultraviolet lithography 解釋
超紫外線光刻技術
  • extreme : adj 1 極端的；過激的 （opp moderate）。2 極限的，非常的。3 盡頭的，末端的。4 〈古語〉最後的，臨終...
  • ultraviolet : adj. 【物理學】紫外的；紫外線的；產生[應用]紫外線的。n. 紫外線輻射。
  • lithography : n. 石印〈平版印刷〉術；平版印刷品。
  1. Euv extreme ultraviolet lithography

    極端紫外平版印刷
  2. Extreme ultraviolet lithography is being developed as one of the most important candidates to fabricate a sub - o. lum - pattern. in recent years, several key technologies have been developed rapidly such as laser producing plasma source, extreme ultraviolet multilayer, optical fabrication and metrology, projection - camara alignment, low - defect mask and control technology of stage

    極紫外投影光刻（ extremeultravioletlithography簡稱euvl ）最有可能成為下一世紀生產線寬小於0 . 1 m集成電路的技術，近年來在激光等離子體光源、極紫外多層膜、光學加工和檢測、光學精密裝調、低缺陷掩模、光刻膠技術以及高穩定工作臺系統控制等關鍵技術方面得到了飛速發展。
  3. Extreme ultraviolet lithography ( euvl ) represents one of the promising technologies for supporting integrated circuit ( 1c ) industry ' s lithography needs during the first decade of the 21st century. this technology builds on conventional optical lithography experience and infrastructure, uses 11 - to 14 - nm photon illumination, and is expected to support multiple technology generation from 65 nm to 35 nm

    極紫外投影光刻（ euvl ， extremeultravioletlithography ）技術作為下一代光刻技術中最佳候選技術，建立於可見/紫外光學光刻的諸多關鍵單元技術基礎之上，工作波長為11 14nm ，適用於製造特徵尺寸為65 35nm的數代超大規模集成電路，預計在2006年將成為主流光刻技術。
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