fast-neutron irradiation 中文意思是什麼
fast-neutron irradiation
解釋
快中子照射- fast : adj 1 緊 （opp loose）， 牢實的，堅牢的，粘得緊的，堅固的；固定的。2 忠實的，可靠的。3 耐久的；不...
- neutron : n. 【物理學】中子。n. -ics 中子（物理）學。
- irradiation : n. 1. 照耀；發光。2. 闡明，啟發。3. 【物理學】光滲，照光，輻照。4. 【醫學】照射。5. 擴散。
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Irradiation defects decompounded and recombined with oxygen impurity and large quantity of nucleation centers were introduced in czsi bulk during annealing at 1100. in nitrogen atmosphere, more defects were induced in fast neutron irradiated czsi than in argon atmosphere
不同氣氛下快中子輻照直拉硅中缺陷形成的差異很大， 1100的高溫退火中，與氬氣氛相比，氮氣氛退火樣品中出現了更多缺陷。 -
Moreover, concentrations of interstitial oxygen in samples changed after fast neutron irradiation. the interstitial oxygen concentration of the samples decreased with increasing of irradiation dosage. this result can be explained in terms of higher generation rates of ( v - o ) complex
另外，快中子輻照對于直拉硅的間隙氧含量有很大影響，間隙氧含量隨著輻照劑量的增加而減少，這主要歸于樣品中產生了大量的（ v - o ）復合體。 -
In czochralski silicon crystals ( czsi ) through fast neutron irradiation, formation and conversion of defects were investigated using fourier transform infrared spectroscopy ( ftir ), positron annihilation technology ( pat ) and scanning electron microscope ( sem ). the results showed that fast neutron irradiation induced large quantity of metastable defects which can be the capture centers of positron, positron annihilation average lifetime of samples increased with increasing of irradiation dosage. positron annihilation average lifetime of irradiation samples through dosage up to 1 1018 n. cm - 2 tended to constant
本文對直拉硅樣品進行了不同劑量的快中子輻照，在硅中引入大量的亞穩態缺陷，研究這些亞穩態缺陷的形成，並在較寬的溫度范圍內對輻照樣品進行了退火處理，研究退火后亞穩態缺陷的轉化及同硅中氧的相互作用，應用傅立葉變換紅外光譜技術（ ftir ） 、正電子湮沒技術（ pat ）和掃描電鏡（ sem ）進行了測試。 -
Interact of fast - neutron irradiation defects and oxygen impurity in cz - silicon was investigated in this paper. the result suggested that oxygen precipitation formed at high temperature was promoted by fast - neutron irradiation obviously. compared with ntdczsi, fast neutron irradiation accelerated precipitation in czsi much more
本文對快中子輻照直拉硅中的缺陷和氧的相互作用進行了研究，快中子輻照促進了直拉硅中的氧沉澱，與以往ntdczsi研究結果相比，其促進作用更加明顯。
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