fermi temperature 中文意思是什麼
fermi temperature
解釋
費米溫度- fermi : n. 【物理學】費密〈長度單位，等於10-13厘米〉。
- temperature : n. 1. 溫度，氣溫。2. 體溫。3. 〈口語〉發燒，高燒。
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The main work can be summed up as follows : firstly, we studied the thermal - field properties of vcsels, and analyzed the influences of current spreading, material parameters and operating conditions on the temperature distributions. secondly, we began with the electrode voltage and calculated the equipotential s distributions, compared the distributions of voltages and current densities in different depths of vcsels, and then studied the influences of the oxide - confining region with different position or thickness, and the different sizes of the gain - guided aperture and emitting window on the distributions of the injected current density, carrier concentration and temperature in the active region. thirdly, we realized the coupling of electricity, optical and thermal - fields, worked out the threshold voltage, calculated the distributions of the injected current density, carrier concentration and temperature under different offset voltages, and analyzed the impacts of temperature profile and carrier density on the refractive index, fermi levels and optical - field
具體工作可以概括如下：首先，研究了vcsel的熱場特性，分析了電流擴展，材料參數和工作條件對于溫度分佈的影響；其次，從電極電壓入手，計算出激光器中的等勢線分佈，並對不同深度處的電壓和電流分佈進行比較，研究了高阻區的不同位置和不同厚度、限制層和出射窗口半徑的大小對電流密度、載流子濃度和溫度分佈的影響；再次，實現了電、光、熱耦合，求出了閾值電壓，計算了不同偏置電壓下的電流密度分佈、載流子濃度分佈和熱場分佈，分析了溫度和載流子濃度變化對折射率、費米能級和光場的影響；最後，給出了考慮n - dbr和雙氧化限制層時激光器中的等勢線分佈，分析了n - dbr和雙氧化限制層對vcsel電流密度、載流子濃度、溫度和光場分佈的影響。 -
The pinning of the surface fermi level at 0. 29 ev above its initial value, equivalent to a variation of schottky baxrier height of 0. 67 ev is observed upon deposition of ~ 0. 6 ml er onto the clean p - type si ( 00l ) ( 2xl ) surface at room temperature
通過對測得的硅和鉺的芯能級和價帶的分析，得到了以下結論：隨著鉺覆蓋度的增加至約為0 6單層，表面fermi能級被釘扎在其初始值0 -
In addition, the specific heat c have been manipulated under control of dimensionality, i. e the chemical potential have been discussed in lower - dimension system. the results is interesting that, dose not intend to fermi energy f when temperature is very low in 2d, whereas is a constant in 1d
對于低維情況的化學勢的討論，我們得到：在二維情況下，當溫度很低時，化學勢不再趨于fermi能量；在一維情況下，為常數（諧振子勢場的頻率一定） 。 -
For fermi system, the finite number effect adds a negative correction to the fermi temperature in 3d, 2d cases, whereas has no effect on 1d case
有限粒子數效應降低了體系的實際的fermi溫度，這個差別也是由位勢的頻率分佈和粒子數n決定的。 -
Fermi temperature under thermodynamical limit is proportional to in 3d, in 2d, whereas n in id
且隨著維數的降低，有限粒子數效應愈加不明顯。
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