field electron emission 中文意思是什麼

field electron emission 解釋
場致電子發射
  • field : n 菲爾德〈姓氏〉。n 1 原野，曠野；（海、空、冰雪等的）茫茫一片。2 田地，牧場；割草場；〈pl 〉〈集...
  • electron : n. 【物理學】電子。 the electron beam 電子束。 the electron theory 電子（學）說。
  • emission : n. 1. （光、熱、氣體等的）發出，發射，射出，放射；傳播。2. （紙幣等的）發行；發行額。3. 發出物，放射物。4. 【醫學】排出；遺精。
  1. In chapter two, we fabricated r - ni - fe / al2o3 nanocomposites successfully by using ball - milling mixing method plus hot - pressing process. meanwhile, their microstructures are characterized by x - ray diffraction ( xrd ) analyser, transmission electron microscopy ( tem ), field emission scanning electron microscopy ( fe - sem ) and brunauer - emmett - teller ( bet ). the results indicate that ni - fe particles are homogenously dispersed in the matrix in the composites

    在第二章中，我們採用高能球磨混合方法加上熱壓燒結工藝，成功制備了ni - 20fe al _ 2o _ 3納米復合材料，並通過x射線衍射儀（ xrd ） 、透射電鏡（ tem ） 、場發射掃描電鏡（ fe - sem ） 、比表面孔隙儀（ bet ）對該復合材料的微結構進行了表徵。
  2. The numerical computing methods of the equations involving the static electric - magnetic field, electronic motion in the static electric - magnetic field, and so on are detailed. the methods of the boundary disposal are introduced. the phenomenon of secondary electron emission has also been studied

    介紹了數值計算方法，包括靜電磁場的數值計算、在靜電靜磁場中電子運動軌跡的數值計算、空間電荷密度的數值計算和空間電位分佈的數值計算;介紹了邊界處理方法。
  3. The reason to cause this phenomenon is due to the change of electric field in the blue oled to induce the probality of the carrier shifted and the hole - electron recombination zone changed, which was a possible alternative to achieve color display. 3 ) device with the structure of ito / npb / adn : balq3 / alq3 / mg : ag was fabricated. when the balq3 dopant concentration was about 25 mol %, a high performance devcie with luminous efficiency of 1. 0 lm / w, the peak of emission spectrum at 440 nm, the cie coordinate at ( 0. 18, 0. 15 ), and half lifetime of unencapsulated device about 950 hrs was achieved

    導致本現象的原因是由於各有機層電場強度的變化影響了空穴和電子的隧穿幾率，從而導致載流子的復合區域發生改變而發出不同顏色的光; 3 ）制備了結構為ito / npb / adn : balq3 / alq3 / mg : ag的藍光oled ，空穴阻擋材料balq3的摻入顯著影響了oled的光電性能，當balq3的摻雜濃度為25mol %時， oled的發光效率為1 . 0lm / w ，發光光譜的峰值為440nm ，色純度為（ 0 . 18 ， 0 . 15 ） ，未封裝器件的半衰期達到了950小時; 4 ）在藍光材料adn中摻雜npb 、 balq3和tbp三種材料時，不僅改善了器件的發光亮度和色純度，而且提高了器件的發光效率和壽命。
  4. The cenosphere particles were characterized with optical microscope, field emission scanning electron microscopy ( fesem ), energy - dispersive spectroscopy ( eds ) and x - ray diffraction ( xrd ) in and after the plating

    用光學顯微鏡、場發射掃描電子顯微鏡、能譜儀和x射線衍射儀對其進行了分析表徵。
  5. The corrosion behavior of nanocrystalline ( nc ) copper bulks with various grain sizes prepared from igc ( inert gas condemsation ) and vacuum annealing in comparison with conventional microcrystalline ( mc ) copper ( as - rolled and electrolytic ) in acid copper sulphate solution and neutral solution containing chlorides under free corrosion conditions and anodic polarizations has been studied using potentiodynamic polarization, potentiometric analysis, cyclic voltammetry and electrochemical impedance spectroscopy. x - ray diffraction was used to estimate the grain size of the annealed nc copper. field emission gun scanning electron microscopy and x - ray energy - dispersive spectroscopy was used to characterize the surface morphology and analyze the surface composition after the polarization and potentiometric test of both nc and mc copper

    本文研究了用igc （惰性氣體蒸發凝聚原位溫壓法）制備並真空退火到不同晶粒尺寸的納米晶銅和微米晶銅（冷軋紫銅、電解銅）在酸性硫酸銅溶液和中性含氯溶液中，在自腐蝕狀態和陽極極化狀態下的腐蝕性能。使用了動電勢極化、電位測定、循環伏安法（ cv ）和電化學阻抗譜（ eis ）等方法。 x -射線衍射（ xrd ）的方法用來估算納米晶銅晶粒尺寸。
  6. Fabrication of 10 inch field assistant hot - electron emission display

    10英寸場助熱電子發射顯示屏的製作
  7. Its linear f - n curve shows the electron emission was field emission

    F - n曲線呈線性關系證明電子發射確為場致發射。
  8. The factors which influenced the process include the insulator ' s material, structure, the distribution of space electrical field, the way to deal with the surface, the characteristic of voltage waveform, pulse width etc. there are two kinds of theory for the vacuum surface flashover : secondary electron emission avalanche ( seea ) and electron triggered polarization relaxation ( etpr )

    影響該過程的因素包括絕緣材料結構、空間電場分佈、表面處理方法、所加電壓特徵，脈沖寬度等。研究真空表面閃絡過程有兩類理論：二次電子發射崩潰（ seea ）和電子引發極化鬆弛（ etpr ） 。
  9. The result showed that the composite had excellent field emission characters. the star - up field intensity was 4. 4v / um and the f - ncurve indicated that the electron emission was leaded by tunnel effect

    材料的場發射性能良好，其發射開啟場強約為4 . 4v um ， f ? n曲線表明該材料的電子發射主要是由隧道效應引起的。
  10. Due to their high aspect ratios and small tip radii of curvature, carbon nanotubes possess marvelous electron field emission properties, viz. low turn - on voltage ( e0 ) and large emission current density ( je ), and have good potential for using as materials in electron emitters of flat panel display

    由於奈米碳管具有極高的縱橫比與極小的尖端曲率半徑，因此奈米碳管有著超乎常態的電子場發射特性，低的場發射起始電壓與大的場發射電流密度，使其為電子場發射平面顯示器的良好材料。
  11. Films of the cnx nanotube were produced by thermal decomposition on fe - coated si substrates, and their low field emission properties have been investigated. a high - emission current density of 1. 28ma / cm2 for an applied field of 2. 54v / u m was achieved, implying cnx nanotubes have better electron field emitter properties than the films of carbon tubes and bcn tubes do under same experiment conditions

    860熱解乙二胺，在沉積有鐵催化劑的矽片上生長出cn _ x納米管薄膜，並進行了低場致電子發射特性測試，外加電場2 . 54v / m時，發射電流達到1 . 28ma / cm ~ 2 ，比相同實驗條件下制備出的碳管、硼碳氮管薄膜的場致電子發射性能優越。
  12. As compared with amorphous diamond on si, the reduction of the applied electric field for the electron emission can be effectively improved by using sm / amorphous diamond contact

    我們發現非晶鉆石長在鍍釤的硅基板比單純長在硅基板上的場發射特性更好，主要是因為金屬有相對較低的功函數，可以降低金屬鉆石接面的位障高度。
  13. Field emission scanning electron microscope

    場發射掃描電子顯微鏡
  14. Surface morphology and composition of the a1 film were characterized with field emission scanning electron microscopy ( fesem ) and energy dispersive spectroscopy ( eds ) to optimize a1 film growth conditions

    利用場發射掃描電鏡（ fesem ）及能量散射譜（ eds ）分析儀對沉積的鋁層進行了表面形貌的表徵和化學組分的分析。
  15. Influence of ni particle on field electron emission from carbon nanotubes

    顆粒對碳納米管場致電子發射的影響
  16. The structure of field emission triode is first simulated by magic. the tip height, tip position, tip curvature, gate aperture, and gate voltage are changed, to observe the emission current and the electron congregation

    本課題首先採用magic軟體對三極體結構的尖錐場發射陰極進行了模擬計算，分別改變尖錐高度，錐尖位置，尖錐曲率半徑，柵極孔徑及柵極電壓，觀察陽極收集電流及電子束的會聚情況。
  17. Emission of relativistic electron in spiral magnetic field

    相對論電子在螺旋磁場中的輻射
  18. Field emission electron image

    場發射電子象
  19. Zinc oxide is a kind of excellent multi - functional semiconductor materials, zinc oxide nanowires have a lot of new optical and electronic characteristics, and one of its functions in the electronic frontier is worked as field emission electron source

    氧化鋅是一種非常優異的多功能半導體材料，氧化鋅納米線具有很多新穎的光學與電學特性，它在電子學領域的用途之一是作為場發射電子源。
  20. It can be seen from the experiment results that field emission performance of pure diamond is not very good. after eptitaxy and silver coating, its field emission performance can be well improved. it is expecting to realize low - voltage electron and high current density field emission

    從實驗數據上看，電泳金剛石的場發射效果不十分理想，但經過外延生長和包銀處理后，場發射特性得到了明顯的改善，這說明金剛石表面修飾對金剛石場發射有重要意義。
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