field fabrication 中文意思是什麼

field fabrication 解釋
現場製作
  • field : n 菲爾德〈姓氏〉。n 1 原野，曠野；（海、空、冰雪等的）茫茫一片。2 田地，牧場；割草場；〈pl 〉〈集...
  • fabrication : 成形加工
  1. Beijing huatianyijia wooden industry ltd. co, be special field fabrication the organism ' s habits producing international tidal current, environmental protection baking finish top grade move decoration face plies such as door plank, door board, cupboard door plank

    北京華田京華田意佳木業有限公司，是專業製造生產國際潮流生態、環保烤漆高檔移門板、房門板、櫥櫃門板等裝飾面板。
  2. We developed the series of wrought - iron fabrication machine ? sdzc multi - functional combination wrought iron machine, which performance reach the advanced stage in the world and fill the blank in this field in domestic

    公司研製的系列鐵藝加工設備? sdzc型多功能組合成型機，其性能達到世界先進水平，填補了國內鐵藝加工設備的空白。
  3. The design and implementation of hydrogen sensors using evanescent field fiber is introduced in this thesis. the research work mainly includes the hydrogen sensing principle of pd film, the principle of surface plasmon resonance, study of highly steady laser light, fabrication of the tapered fiber and etched fiber, the deposition of pd film, the encapsulation of sensor and the experimental results ( including the design of the set - up ) and the discussions

    本論文主要圍繞實現漸逝場型光纖氫氣傳感器，開展了以下一些相關的技術性研究:鈀的氫敏感原理、表面等離子共振原理、穩定化光源的研究、拉錐型光纖和腐蝕型光纖的製作、薄膜的生長、傳感頭的封裝和傳感系統的實驗及結果分析。
  4. Fabrication of 10 inch field assistant hot - electron emission display

    10英寸場助熱電子發射顯示屏的製作
  5. Mems technology is a hot topic of science and industry in the 21st century, and micro - fabrication technologies are the key to the mems development. in the mems field, microstructure with high height and high aspect ratio is often used. liga ( x - ray lithography 、 electroforming 、 micro - replication ) technology are the very way to fabricate this microstructures

    在mems領域中，常需要用到具有一定厚度和深寬比的微結構， liga （ x射線深層光刻、電鑄成型和微復制）技術是製作這種微結構的重要手段，因此成為mems微細加工中十分重要的技術。
  6. Therefore, the waveguide optical modes in the semiconductor lasers with different waveguide structures are investigated by means of optical waveguide theory. with the development of fabrication and packaging techniques, the dimensions of optoelectronic and photonic systems have become smaller and smaller. the far - field radiation models are no longer suitable for the near - field distribution of semiconductor lasers

    隨著製作工藝和封裝技術的發展，光電系統和光子系統的尺寸越來越小，半導體激光輻射的遠場模型不再適合其近場特性的分析；而且，半導體激光器可以作為近場虛擬光探針，應用於近場光學高密度存儲、納米光刻、近場光學成像以及光譜探測等領域。
  7. Column and content as a journal in the electro - optic field, it is an application technology oriented journal, it covers almost all the topics relevant with optics, such as optical design, optical fabrication and integration, image processing, optical metrology, electro - optic engineering, optical communication, low - light - level night vision, ir and laser technology, thin - film optics, electro - optic countermeasures, etc

    同時，應用光學也受到國外著名檢索機構網路的關注， 2006年被俄羅斯文摘雜志aj美國化學文摘ca和劍橋科學文摘csa收錄， coden碼為yguae4 ，在國際上有了一定的影響力。
  8. Along with silicon ulsi technology has seen an exponential improvement in virtually any figure of merit, as described by moore ’ s law ; the miniaturization of circuit elements down to the nanometer scale has resulted in structures which exhibt novel physical effects due to the emerging quantum mechanical nature of the electrons, the new devices take advantage of quantum mechanical phenomena that emerge on the nanometer scale, including the discreteness of electrons. laws of quantum mechanics and the limitations of fabrication may soon prevent further reduction in the size of today ’ s conventional field effect transistors ( fet ’ s )

    隨著超大規模集成電路的的發展，半導體硅技術非常好地遵循moore定理發展，電子器件的特徵尺寸越來越小;數字集成電路的晶元的集成度越來越高，電子器件由微米級進入納米級，量子效應對器件工作的影響變的越來越重要，尺寸小於10nm將出現一些如庫侖阻塞等新特性。量子效應將抑制傳統晶體管fet繼續按照以前的規律繼續減小。在這種情況下，宏觀的器件理論將被替代，可能需要採用新概念的晶體管結構。
  9. Static - electric field of spindt cathode was analyzed and then field emission current was simulated. the method could direct the fabrication of spindt cathode. how the aspect ration and site density of cnts effect the field enhancement factor were also analyzed

    對碳納米管的頂端電場進行了計算，分析了其長徑比和生長密度對電場增強因子的影響，進而可以對場發射實驗進行指導。
  10. The dissertation gives a comment on the field of energy - transmitting fibers for mid - infrared laser, an introduction to the mechanism of infrared - transmitting fibers in view of radiations and waveguides, and a theoretical analyze of the layer - selecting method for the fibers with multi - layer dielectric films. in view of the properties of sic in the region of mid - infrared, the author has done many works about the energy - transmitting fibers with sic, and summarized as follows : first, it is found that sic is a very good material for the fabrication of power - transmitting fibers for mid - infrared laser, especially for co2 laser that works at 10. 6um wavelength, and sic / sio2 hollow fibers has not been studied in the world for the first time to our knowledge. second, it is pointed out, for the first time to our knowledge, that the hollow fibers with a structure like si / sic / sio2 or ge / sic / sio2 have very good properties for the mid - infrared laser power transmitting, especially for co2 laser

    本論文評述了關于中紅外傳能光纖的國內外進展，從光射線理論和波導理論出發介紹了紅外傳能光纖的傳輸機理，從薄膜光學出發分析了多層介質膜傳能光纖的膜層選擇機理等基礎理論，針對碳化硅（ sic ）在中紅外區的特點，在導師侯藍田教授領導的科研組已有成果的基礎上進行了以下幾個方面的研究：發現了sic是制備紅外傳能光纖的良好的紅外材料， sic sio _ 2空芯傳能光纖在國際上還沒有人進行研究：提出了具有si sic sio _ 2和ge sic sio _ 2膜結構的空芯傳能光纖，據我們所知，這種光纖目前在國內外還沒有人進行研究，並對其傳輸性能進行了可行性分析。
  11. Introducing several osl fabrication methods, mainly electric field poling method is investigated, and discussing the limit relation among poling electric field e, poling current i and natural poling intensity ps, and analyze the various factor affecting the osls quality. 4. the experiment of aperiodical litaos multi - wavelength shg is demonstrated

    3 、介紹了幾種介質制備的方法，著重對高壓電場極化法進行了理論研究，討論了脈沖電壓，電流及自然極化強度p _ s之間的制約關系，分析了影響成疇質量的幾個物理因素。
  12. That our company special field designs that fabrication is of all kinds comes to sample plate pen, gift pen, export sales pen, advertisement pen etc., is that the foreign merchant and every in the homeland industry order and process choose special field making one of company

    萬里文具禮品有限公司專業設計製造各類來樣品牌筆、禮品筆、外銷筆、廣告筆等，是外商及國內各行業訂購和加工的首選專業製造公司之一。
  13. The shg was found in as - prepared films and the intensity of film with 20 % se was bigger then that of 10 % se films. this phenomenon indicated that the film had been poled during the fabrication, due to the influence of electric field and magnetic field

    結果表明薄膜的制備方法影響了薄膜的微觀結構，磁控濺射過程中，電場和磁場影響了靶材原子的沉積，使玻璃薄膜中的電偶極子在一定程度上得到了定向排布，使薄膜呈現出顯著的二階非線性效應。
  14. The device structure and physical models of 4h - sic mosfet and mesfet are built and the properties are simulated with the use of medici software. the influence of the temperature and structure parameter on the device ' s properties is summarized indicates that no negative resistance exists in breakdown property and the breakdown voltage is up to 85v and 209v separately. the maximum power density of 4h - sic mesfet is as high as 19. 22w / mm. at the same time, the processes of sic field - effect transistor is studied and the fabrication processes suitable to sic mosfet are developed.

    論文分析建立了4h - sicmosfet和mesfet器件的結構模型和物理模型，採用二維器件模擬軟體medici對4h - sicmosfet和mesfet的輸出特性進行了模擬分析，研究了溫度和結構參數對器件特性的影響，表明兩種器件的擊穿特性均沒有負阻現象，擊穿電壓分別達到85v和209v ，由此得到4h - sicmesfet最大功率密度可達到19 . 22w mm ；同時，研究了sic場效應晶體管的製作工藝，初步得到了一套製造sicmosfet器件的製造工藝流程，研製出了4h - sicmosfet器件。
  15. The fabrication of the nano - structures and the study of nanoelectronic devices ( single electron transistor - set, single electron memory, etc. ) are one of the most important projects of the nanoelectronics and nanotechnology, of a study field with most vitality, progressive future, and it may bring magnitude effect to new technology revolution and industry in future

    納米結構的制備和納米電子器件（單電子晶體管、單電子存儲器等單電子器件）的研究是納米電子技術中最重要的研究內容之一，是最具有生命力、最具有發展前途，對未來新技術革命和產業可能帶來革命性作用的研究領域之一。
  16. It has broad application prospect in the following fields such as microelectronics, photoelectronic devices, large screen flat panel display, field emitter array, acoustic surface wave device, photon crystal, light waveguide array, holographic honeycomb lens and micro - optical element array, micro - structure manufacture, fabrication of large area grating and grid of high resolution, photoresist performance testing, profile measurement and metrology, etc. the paper only involves the primary research of interferometric lithography

    在微電子、光電子器件、大屏幕平板顯示器、場發射器陣列、表面聲波器件、光子晶體、光波導陣列、全息透鏡和微光學元件陣列、微結構製造，高分辨、大面積光柵和網格製造，在抗蝕劑性能測試、面形測量和計量等領域，干涉光刻技術都具有廣闊的應用前景。
  17. Recently bulk tb - dy - fe single crystals have been obtained by magnetic levitation cold crucible without contamination in wuhan university of technology. these excellent single crystals, possessing a large displacement output under low magnetic field, build a foundation for the fabrication of the high precision micro - displacement actuators. the purpose of this research is to manufacture an advanced micro - displacement actuator with this high performance single crystal as the driving unit

    常規的磁致伸縮型微位移致動器大多採用多晶或具有孿晶結構的磁致伸縮材料作為驅動單元，由於晶界和孿晶界對疇壁的移動具有阻礙作用，其低場下的位移輸出較小，調控精度受到很大影響。
  18. With the development of micro - electronics and information processing, microelectronic devices with high density, high velocity and superfrequency have been get rid of the stale and brought forth the fresh, which vastly prompt the development of the micro fabrication technologies to the field of the hyperfine, and put forward the higher requirement for the resolution of the conventional photo 1 i tho graphy

    隨著微電子和信息技術的飛速發展，高密度、高速度、超高頻微電子器件不斷推陳出新，促使微細加工技術不斷向著超精細領域發展，對傳統光學光刻技術的分辨本領提出更高的要求。傳統光學光刻中提高解析度往往是以犧牲系統焦深為代價的。
  19. By site evaluation and mutual agreement of safety, maintenance, production and engineering, areas may be designated shop areas on construction or field fabrication projects after proper evaluation

    經過場所評估和安全、維修、生產和項目工程師的一致同意，在正確的評估后在建築物或安裝工程場可能指定為（維修）車間區。
  20. A novel patterning technology of fine - pitched carbon nano tubes pixels on photo resists layer has been developed by lift - off process. another new sealing technology named flat panel sealed method in vacuum chamber for fed or other electro - vacuum devices has also been developed. the screen printed carbon nano tube field emission display device fabrication process has been set up and a 2

    建立了一種採用光刻膠作掩模的直接剝離方法，並可獲得高密度線條分佈的碳納米管冷陰極；建立了一種電真空器件的真空原位平面封裝方法；建立了一整套較為完善的碳納米管場發射冷陰極印刷制備及場發射顯示器件制備的工藝流程，並成功獲得2 . 2英寸碳納米管動態顯示原理型樣機。
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