film growth 中文意思是什麼
film growth
解釋
薄膜生長-
Preferred growth of nanosized crystal silicon in doped hydrogenated nanocrystalline silicon film
薄膜中納米硅晶粒的擇優生長 -
Effect of reducing the dosage of methyl bromide and covering virtually impermeable film on soil fumigation and tomato growth in greenhouse
少用甲基溴的土壤消毒效果及對溫室番茄生長的影響 -
Ma na bold and decisive action when she carries to break through 50 us dollars in new york was also experiencing now known film, do not care about her around her right to belittle a criticism even scold sound, but like the wind as the narrow - leaved oleaster growth, even live out their attitude, become synonymous with treason
瑪當娜大膽果斷，她懷揣50美元闖紐約的經歷如今人盡皆知還被拍成電影，她從不在乎周圍對她的一片批評貶低甚至責罵聲，反而象風中的沙棗樹那樣生長，竟活出了自己的姿態，成為叛逆代名詞。 -
By compressing a monolayer film, the coexistence of liquid condensed ( lc ) and liquid expanded ( le ) phases can be reached. the transition from le to lc is usually regarded as a first - order one, so the theory of crystallization can be applied. in this article we review our recent studies on the growth of lc domains in the le - lc coexistence region driven by the illumination of a fluorescent microscope. the mechanism of this unusual 2d domain growth phenomenon is discussed. the formation of faceted, dendritic and fractal - like domains as well as the evolution and the transition of these patterns are investigated
當處于氣液界面的類脂類化合物的單分子膜被壓縮時，隨著分子間距的縮小，單分子膜將經歷一系列相變過程.通過熒光顯微術可以觀測到新相的成核和生長過程.由於單分子膜的二維特性，該系統中的實驗觀測對于檢驗和發展二維界面生長理論尤為重要.本文總結了近年來本課題組與相關單位合作，在單分子膜系統中發現的實驗現象以及對其生長機制的系列研究.內容包括對單分子膜系統中的成核、界面穩定性、枝晶生長、形態演變等的觀測和分析 -
Abstract : by compressing a monolayer film, the coexistence of liquid condensed ( lc ) and liquid expanded ( le ) phases can be reached. the transition from le to lc is usually regarded as a first - order one, so the theory of crystallization can be applied. in this article we review our recent studies on the growth of lc domains in the le - lc coexistence region driven by the illumination of a fluorescent microscope. the mechanism of this unusual 2d domain growth phenomenon is discussed. the formation of faceted, dendritic and fractal - like domains as well as the evolution and the transition of these patterns are investigated
文摘:當處于氣液界面的類脂類化合物的單分子膜被壓縮時，隨著分子間距的縮小，單分子膜將經歷一系列相變過程.通過熒光顯微術可以觀測到新相的成核和生長過程.由於單分子膜的二維特性，該系統中的實驗觀測對于檢驗和發展二維界面生長理論尤為重要.本文總結了近年來本課題組與相關單位合作，在單分子膜系統中發現的實驗現象以及對其生長機制的系列研究.內容包括對單分子膜系統中的成核、界面穩定性、枝晶生長、形態演變等的觀測和分析 -
Besides, the growth of gasb expitaxy film was monitored by reflection high energy electron diffraction ( rheed ). the rheed images and intesity oscillation are collected by computer system. it showed that the gasb film prepared in 400 was amorphous and it became monocrystalline when the temperature rose to 500. atomic force microscope ( afm ) was applied to analyse the surface morphology of the films which were grown in diffrent growth rates or substrate temperature. the analysis were compared to simulation results. the experiment results indicated it was easy to form clusters when the rate of growth is high or
此外，本文通過反射式高能電子衍射（ rheed ）監測了gasb外延薄膜的生長，利用rheed強度振蕩的計算機採集系統實現了rheed圖像和rheed強度振蕩的實時監測。實驗發現在400生長的gasb薄膜為非晶態，溫度升高到500薄膜轉變為單晶。利用原子力顯微鏡對不同生長速率和襯底溫度生長的gasb薄膜的表面形貌進行觀察分析，並與模擬結果進行比較。 -
Results showed that by using straw and plastic film dual mulch in dry - cultivation of rice planting, both of the range of temperature difference and the loss of water in dry - cultivated field of rice were decreased, the soil structure was improved, the soil nutrient contents were increased, the ineffective tillers of rice plant were decreased, the growth and development stage were advanced, the filling stage was extended, the grain per ear and 1 000 grain weight were raised, the grain yield of rice increased obviously
水稻秸稈+地膜二元覆蓋旱作栽培效應的研究結果表明，秸稈+地膜二元覆蓋旱作稻田土壤變溫幅度降低，水分散失減少，結構改善，養分積累增加；水稻無效分蘗減少，生育轉變提前，灌漿結實期延長，穗大粒多，千粒重高，增產效果顯著。 -
The surface modification of foils contributes to the activation of surface before etching, and consequently provides more pit sites. the redemption and regeneration of passive film on foil surface lead to continuous growth of tunnels. anodized in oxide - forming acid, the etched foil shows higher capacitance
侵蝕前鋁箔的表面改性處理研究了堿性、酸性溶液、直流電和低頻交流電對比容的影響，結果表明堿性溶液和酸性溶液處理有利於活化表面、提高比容；直流電和低頻交變電流表面改性需嚴格控制時間在5s內，最佳為2s ，可提高比容8 10 。 -
Chondroitin sulfate a ( c4s ), as a kind of endogenetic urinary macromolecule, not only increased the supersaturation of cac2o4 in solution, but also inhibited the two - dimensional growth and aggregation of com crystals. the growth of calcium oxalate crystals was influenced by surface pressure beneath dppc monolayer film. there were some crystals which have the same appearance as com crystals obtained from pure water system when monolayer surface pressure was hold 1, 10 and 30 mn / m while those growth at 20 mn / m were perfect orderly induced by dppc monolayer
生物大分子c _ 4s作為一種內源性的尿大分子，它不僅從熱力學上提高ca ~ （ 2 + ）在尿液中存在的濃度，使體系中cac _ 2o _ 4保持較高的相對過飽和度，降低草酸鈣結石成核的可能性；而且在晶體生長時，抑制com晶體晶面的二維生長和晶體聚集。 -
Furthermore, the growth and the study of self - organized quantum dots structures become more and more important recently, and the application of self - organization technique become wider and wider in this thesis, we address the theory of film growth and the growth technique firstly more, the ways and characteristics of surface detection are prescribed we mainly report the growth process, results and discuss of self - organized quantum dots structures in the a12o3 substrates by s - k mode using ecr - mocvd, in the espd - u device the growth art of ain epilayer which is the preliminary foundation of self - organized gan / ain quantum dots structures, including the substrate cleaning, nitridation, the growth of buffer and the growth of gan and ain epilayer, is discussed we deliberately compare the test result of rheed xrd and afm and achieved the optimalized condition of ain at last we have successfully realized the growth of ain which is much smooth and better crystal quality moreover, we grow the self - organized gan / ain quantum dots structure in s - k mode because the limits of the heater temperature, we can not grow the atom - smooth epilayer of ain until now so we could not grow better quantum dots which have small diameter and big density but the self - organized quantum dots structures with better quality will be realized successfully if the substrate temperature is increased the thesis study belong to my tutor subject of national nature science foundation ( 69976008 )
本論文主要論述了在espd - u裝置上，採用電子迴旋共振等離子體增強mocvd （ ecr - pamocvd ）方法，在藍寶石襯底上通過s - k模式自組裝生長gan aln量子點結構的生長工藝、結果及討論。而重點分析了自組裝生長量子點之前的aln外延層生長工藝，包括襯底清洗、氮化、緩沖層的生長和gan 、 aln外延層的生長；通過高能電子衍射、 x射線衍射和原子力顯微鏡測試，並且對這些測試結果進行了詳細的比較研究，得出了較優化的工藝條件，生長出了晶質較好、表面較平整的aln外延層；進而採用s - k模式自組裝生長了gan aln量子點結構。由於實驗裝置加熱爐溫度的限制，我們沒有能夠生長出原子級平滑的aln外延層表面，因而沒能夠生長出密度比較大和直徑比較小的量子點。 -
In this paper, the gas phase dissociation process during the diamond film growth from electron - assisted chemical vapor deposition ( eacvd ) by considering ch4 / h2 mixture gas as source gas had been studied by using monte - carlo computer simulation method. the eacvd gas phase dynamics model was built firstly and the low temperature deposition process was also discussed
本工作採用蒙特卡羅（ monte - carlo ）計算機模擬的方法，對以ch _ 4 h _ 2為源氣體的電子助進化學氣相沉積（ eacvd ）金剛石薄膜中的氣相分解過程進行了研究，初步建立了eacvd氣相動力學模型，並討論了eacvd中的低溫沉積過程。 -
In this paper, plasma - enhanced chemical vapor deposition ( pecvd ) technique was used to deposit the dielectric p - sio2 films and p - sion films on the silicon wafer under the conditions of low temperature and low pressure with teos organic sourse. this research was focused on the evaluation of film growth, hardness, stress, resistance and refractive index, by changing the experimental parameters including rf power, substrate temperature, chamber pressure, and the flow rates of teos, o2, n2. the results showed that the p - sio2 film was smooth, dense, and structurally amorphous
實驗結果顯示，用pecvd法淀積的p - sio _ 2膜是一表面平坦且緻密的非晶質結構的薄膜，與矽片襯底之間有良好的附著性；在中心條件時生長速率可控制在2600a / min左右；在基板溫度410時有最大的硬度可達16gpa ；其應力為壓縮應力，可達- 75mpa ；薄膜的臨界荷重為46 . 5un 。 -
Computer simulation and the modeling of thin film growth
薄膜生長模型與計算機模擬 -
Influence of silicon carbide on diamond film growth on heterogeneous substrates
在異質襯底生長金剛石膜的作用分析 -
Surface morphology and composition of the a1 film were characterized with field emission scanning electron microscopy ( fesem ) and energy dispersive spectroscopy ( eds ) to optimize a1 film growth conditions
利用場發射掃描電鏡（ fesem ）及能量散射譜（ eds ）分析儀對沉積的鋁層進行了表面形貌的表徵和化學組分的分析。 -
We combined the cvd technique with the pecvd technique by adding a dc or rf electric field to the reacting region of cvd device, and improved the inputting method of reaction gases, then had executed a diamond film growth system. the advantages of our system are : ( 1 ) reaction power, which can enhance the density of the plasma in the reacting region, is supplied with the heat filament and the dc electric field, or with the heat filament and the rf electric field both of them can be controlled precisely and they are complementary to each other
將熱絲cvd技術與pecvd技術相結合，在薄膜的成核和生長階段分別給反應區再施加一個直流和射頻電場，同時改進反應氣體的進氣方式，製成具有下列兩大特點的金剛石薄膜生長系統： （ 1 ）反應功率由熱絲和直流電場或熱絲和射頻電場共同提供，兩者互相補充，可精確控制，大大提高了反應區的等離子體密度； （ 2 ）能精確控制反應氣體的分佈、流量及流速。 -
Cellular automata simulation of magnetic thin film growth process
磁性薄膜生長的元胞自動機模擬 -
High quality znsxse1 - x thin film grown at the optimized temperature had the smoothest surface with lowest rms value of 1. 2 nm and tem cross - sectional micrograph showing a well defined columnar structure. the dependence of substrate temperature, deposition rate and alloy composition to the structure of the film was discussed in the thesis. the developed theory named " quasi - structure area mode " can successfully explain the film growth mechanism of polycrystalline znsxse1 - x thin films deposited on ito substrate by mbe
研究了採用mbe系統沉積zns _ xse _ （ 1 - x ）多晶薄膜的生長機理，分析了襯底溫度、沉積速率及薄膜組分對薄膜微結構的影響，提出的「類結構區域模型」可以較完整地解釋ito襯底上zns _ xse _ （ 1 - x ）多晶薄膜生長的機理。 -
Computer simulation of thin film growth
薄膜生長的計算機模擬 -
Off - lattice kinetic monte carlo simulation of initial stage of tin film growth
薄膜生長過程中孔洞填充的蒙特卡羅模擬
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