film index 中文意思是什麼

film index 解釋
薄膜指數
  • film : n 1 薄層,薄膜;薄霧,輕煙;細絲狀的東西。2 【攝影】感光乳劑,照相軟片,電影膠片;影片。3 〈 pl ...
  • index : n (pl es dices )1 索引。2 指標,標準,標志。3 示[食]指 (=index finger)。4 指數。5 【印刷】指...
  1. Ceo22 is used as optical materials, polishing agents, ultraviolet absorption materials, the cleaning catalyst of car ' s waste gases, chemical decolorant of glass, radiation - resisting glass permanent magnet, electronic ceramics etc. if it is processed into nanoparticles, it will exhibit some novel properties led to varied applications. for example, ceo22 nanocrystal is a better promoter of cytochrome c and the stabilizer of zro22 ceramics. because of its high index of refraction and good stability, it is used to produce reduced reflection film

    Ceo _ 2是一種廉價而用途極廣的材料,如用於發光材料、拋光劑、紫外吸收材料、汽車尾氣凈化催化劑、玻璃的化學退色劑、耐輻射玻璃、永磁體、電子陶瓷等,其納米化后將出現一些新的性質及應用,如ceoz納米晶是細胞色素c的良好的催進劑,還用作zro :陶瓷的穩定劑,由於ceo :折射率高,穩定性好,常用於制備減反射膜等。
  2. A planar film of refractive index nf is sandwiched between a substrate and a cover material.

    折射率為nf的平面薄膜夾在感光襯底和覆蓋層之間。
  3. The refractive index ( at 632. 8nm ) of cbn thin film with 92. 8 % cubic phase content is measured to be2. 19 by ellipsometer

    用橢偏儀測得,對于波長為632 . 8nm的光,立方相含量為92 . 8的氮化硼薄膜的折射率為2 . 19 。
  4. When the two layers of sio2 with different refractive index are finished, the designed mask pattern is printed on the film by photolithography. after that, icp is performed for dry etching, then, the waveguide structures are obtained. at present, the rudimental graph of edg has been obtained

    兩層不同折射率的sio _ 2薄膜制備好之後,經過光刻、等離子體刻蝕( icp )的工藝步驟之後,形成了波導結構,初步製作出了器件的圖形。
  5. The course covers non - sequential ray tracing, sources, detectors, objects, ray splitting, scattering, ghost analysis, stray light analysis, prisms, fresnel lenses, multi - element lenses, gradient index, polarization and thin film modeling

    本課程涵蓋了非連續光線的追跡、光源、探測器、物體、分光、散射、鬼像分析、雜散光分析、棱鏡、菲涅耳透鏡、多元件透鏡、梯度折射率、偏振和薄膜的建立。
  6. If we suppose 0, n0, nl, hh expressing incident angle, refractive index of glass prism, refractive index of low and high thin film material respectively

    和ill分別表示高低膜料的折射率,則macneille薄膜偏光分束鏡的設計要滿足如下公式。 。 n , n
  7. The relationship between crystal face index and film quality in single crystal diamond film

    單晶金剛石膜中晶面指數與薄膜品質的關系
  8. Align the film leader with the film leader index, and close the back cover. the film will advance to the first frame automatically

    將膠卷牽引片上的標志和牽引頭后關上相機后蓋,膠卷將自動進入第一張畫格。
  9. Through the internet or the workstations at the resource centre. moreover, internet links and electronic databases such as, " wisenews " and " film index international " are also available in the resource centre to facilitate effective searching for more film - related information resources

    此外,資源中心內還提供網際網路及其他電子資源如:慧科新聞資料庫( wisenews )及filmindexinternational線上電影資料庫的檢索服務,以方便公眾人士更有效去搜尋電影相關資料。
  10. However, the refractive index will increase with the increase of the flow ratio of sifu / nhs, slightly increase with the increase of substrate temperate, and decrease with the increase of rf power. by measuring the passivation results of hydrogen plasma and sinx thin film, we found an evident improvement of minor carrier lifetime in polycrystalline silicon after hydrogen plasma treatment, although it has little to do with the annealing temperature and time. the hydrogen contained in sinx thin film can enhance the carrier mobility of monocrystalline silicon, but after annealing at high temperature the mobility turns down

    通過測試氫等離子體鈍化和氮化硅薄膜鈍化的效果,實驗還發現氫等離子體處理對多晶硅材料的少子壽命提高作用比較明顯,但是這種提高作用與處理溫度以浙江大學碩士學位論文王曉泉2003年5月及時間的關系不大;氨化硅薄膜中的氫對單晶硅的載流子遷移率提高有一定作用,但經過高溫處理后這種作用消失;氮化硅薄膜能提高單晶硅和多晶硅的少子壽命,具有表面鈍化和體鈍化的雙重作用;氫等離子體和氮化硅薄膜都能有效地提高單晶和多晶電池的短路電流密度,進而使電池效率有不同程度(絕對轉換效率0
  11. Since high purified water for blood dialysis is obtained by reverse osmosis film separation, the quality of reverse osmosis unit is critical for water quality index, which should meet aami water supply standard, thus entailing a proper plan for the whole system

    血液透析用反透水處理系統採用反透膜法分離技術制取高品質純凈水,反滲透裝置的質量可靠性是關系產水指標能否達到美國aami用水標準的關鍵,合理的設計方案是必要的前提條件。
  12. The optimum refractive index of the coated dielectric is, and the optimum thickness is the best choice of the metallic film is silver, with the thickness beyond 0. 1 jam

    單層電介質的理論最佳折射率為,最佳厚度為,金屬膜為銀膜,要求厚度為0 . 1 m以上。
  13. The mode refractive index of 632. 8nm wavelength, which propagates in ion - exchanged planar waveguides, is obtained by m line technology ; the serious problems of silver film ion - exchange also be pointed out. the refractive index profile of planar waveguide is obtained with inverse wentzel - kramer - brillouin method by measured mode refractive index. finally, some improvements of silver film ion - exchange is put forward

    最後介紹了銀膜電場輔助法制備光波導的試驗過程,對實驗獲得的參數進行了分析和計算,得到了波導的模折射率和折射率變化的函數曲線,隨后對在試驗過程中遇到的一些問題和現象進行了闡述,分析了其產生的原因,並提出了自己的觀點和改進的辦法。
  14. The variation of the film composition can be monitored by using the method of spectrum analysis during the film deposition ( for the intensity of the persistent line is proportional to the particle density of the element in the vacuum chamber ). the measurement of the transmission spectrum of the film on a transparent substrate can be used to calculate the film parameters, such as refractive index, extinction coefficient and the thickness of the film. therefore, the combination of the two methods would be helpful to on line monitoring the film constituents and the optical paramenters in the preparation of thin films

    在制備薄膜的過程中,利用光譜分析的方法,以放電光譜特徵譜線強度的變化來反映相應物質成分的變化,以連續光譜光源發出的光透射過薄膜的透射率的變化,來反映薄膜的厚度、折射率、吸收系數等光學參數的變化,從而達到在制膜過程中,對薄膜的成分、厚度等參數進行在線監控的目的
  15. In this paper, plasma - enhanced chemical vapor deposition ( pecvd ) technique was used to deposit the dielectric p - sio2 films and p - sion films on the silicon wafer under the conditions of low temperature and low pressure with teos organic sourse. this research was focused on the evaluation of film growth, hardness, stress, resistance and refractive index, by changing the experimental parameters including rf power, substrate temperature, chamber pressure, and the flow rates of teos, o2, n2. the results showed that the p - sio2 film was smooth, dense, and structurally amorphous

    實驗結果顯示,用pecvd法淀積的p - sio _ 2膜是一表面平坦且緻密的非晶質結構的薄膜,與矽片襯底之間有良好的附著性;在中心條件時生長速率可控制在2600a / min左右;在基板溫度410時有最大的硬度可達16gpa ;其應力為壓縮應力,可達- 75mpa ;薄膜的臨界荷重為46 . 5un 。
  16. The optical characteristics for stn - lcd with film compensation are determined mainly by the anisotropy of refractive index of liquid crystal material, the distribution of director in liquid crystal layer, the orientation of polaroids and the compensating films " orientations and their optical retardations

    膜補償stn - lcd的光學傳輸特性主要取決于液晶材料的折射率各向異性( n _ e和n _ o ) 、液晶層中指向矢( director )沿層面法線的分佈、前後偏振片的方位角和補償膜的方位角及光學延遲。
  17. A new technique for liquid refractive index measurement by stratified film interference

    超短基線水下定位的關鍵技術分析
  18. Load the film cassette into the film chamber and pull out the film leader so that it extends past the film leader index

    把膠卷盒放入膠卷盒腔,拉出膠卷的牽引頭,使牽引頭超出牽引頭標志。
  19. Both hydrogen plasma and sinx thin film can effectively enhance the short circuit current density of mono and poly silicon solar cells, which cause the improvement of the absolute transfer efficiency about 0. 5 % ~ 2. 9 %. depositing sinx thin film followed by hydrogen plasma treatment will result in better passivation effect. the thickness of sinx thin film will decrease and the refractive index will increase after annealing

    經過薄膜後退火處理發現,氮化硅薄膜經熱處理后厚度降低,折射率升高,但溫度達到1000oc時折射率急劇降低;沉積氨化硅薄膜后400oc退火可以促進氫擴散,提高鈍化效果;超過400oc后氫開始逸失,晶體硅材料中的少子壽命急劇下降; rtp (快速熱處理)處理所導致氫的逸失比常規退火處理顯著。
  20. The film index is higher than that of bulk glass of the same composition as the target, but prepared by rapid quenching from the melt.

    薄膜折射率高於與靶成分相同的體型玻璃折射率,而此玻璃是由熔體迅速冷卻制得的。
分享友人