film preparation 中文意思是什麼

film preparation 解釋
薄膜制備
  • film : n 1 薄層，薄膜；薄霧，輕煙；細絲狀的東西。2 【攝影】感光乳劑，照相軟片，電影膠片；影片。3 〈 pl ...
  • preparation : n 1 準備，預備；〈常 pl 〉準備工作[措施]；預修，預習 （for） 預習時間；（對…的）準備。2 （藥、菜...
  1. On preparation and photocatalytic capability of nano tio2 thin film adulterated with ag

    2薄膜的制備與光催化性能研究
  2. In this paper, pan based metal gradient composites films ( pmgcf ) were prepared by electrochemical reduction. the effect of polymer matrix on pmgcf and preparation and its forming mechanism of pmgcf were invested, they are as follows : lacrylonitrile - methyl - methacrylate copolymer, acryonitrile - itaconic acid copolymer, acrylonitrile - methyl methacry late - sodium allyl sulfonate terpolymer have been synthesized seperately in order to analyze the effects of the mma monomer unites and the hydrophilic unites of acryonitrile terpolymer on the process of copper deposition in polyacrylonitrile - based metal gradient composite film ( pmgcf ) as well as the flexibility of the film

    其內容如下： 1通過合成的丙烯腈?甲基丙烯酸甲酯二元共聚物（ p （ an - mma ） ） ，丙烯腈?亞甲基丁二酸二元共聚物（ p （ an - ita ） ） ，丙烯腈-甲基丙烯酸甲酯?丙烯磺酸鈉三元共聚物（ p （ an - mma - as ） ）分別作為基體制備了聚合物基金屬梯度復合膜材料（ pmgcf ） ，以分析加入的mma基團和親水性基團對pmgcf沉積層中金屬銅的梯度分佈形態和膜的柔韌性的影響。
  3. The preparation of ito thin film with sol - gel technique

    凝膠修飾膜的制備與表徵
  4. The pertinent research work has been carried out as follows : the transparent nano - tio2 films on soda - lime glass substrates were obtained by sol - gel process. the precursor of nano - tio2 film was ti ( oc4h9 ) 4 and the menstruum was c2h5oh. the preparation conditions which were effecting the nano - tio2 quality were researched

    本文主要就納米tio _ 2薄膜的制備、探索用ecr氮等離子納米tio _ 2的摻雜改性等開展了如下的工作：本文採用溶膠?凝膠法，以鈦酸丁醋做前驅體、無水乙醇做溶劑，水解制備溶膠，然後通過提拉法制備納米tio _ 2薄膜。
  5. The preparation, measure and tribological performance of zno nano - particles and octidecyltrichlorosilane ( ots ) self - assembled molecular film is studied in this paper. the main conclusions are reached as followed. 1

    本文對zno納米微粒及三氯十八硅烷（ octidecyltrichlorosilane ，簡稱ots ）自組裝分子膜的制備、表徵及摩擦學性能進行了研究，得出的主要結論如下： 1
  6. Preparation of sio2 - tio2 film and study on its photocatalysis activity

    2薄膜制備及其光催化性能研究
  7. Preparation of the doped tio2 film photocatalyst and its bactericidal mechanism

    2光催化膜材料的制備及其滅菌機理
  8. Preparation and evaluation on pva polarizing film

    偏光膜的制備及性能研究
  9. Among various fabrication techniques of thin film, the sol - gel process has gained much interest for the preparation of pzt thin film, due to ihe advantages of good homogeneity, easy control of composition, low in - ill i reaving temperature, easy formation of large area thin films pb ( zrxti : - k ) 0 :, ( pzt ) films were prepared on the ito coated glass plates and low resistor silicon wafer in sol - gel dip - coating process associated wi di heat treatment : at different temperatures and characterized by x - ray diffraction ( xrd ) and transmission electron microscopy ( tem ). lt is shown that the pzt ferroelectric thin films with ( 110 ) preferred orientation and well - crystallized perovskite structure can be obtained after annealing at 680 ? for 30 minutes on ito substrate and at 800 " c for lornin on silicon substrate

    Pzt的制備方法有很多，其中溶膠?凝膠（ sol - gel ）方法可以和集成電路（ ic ）光刻工藝相互兼容，處理溫度低，有大面積塗敷性能，能精確地控制組分，無需復雜的真空設備，成本低廉，所以對于集成鐵電薄膜電容的應用這種方法有很廣闊的前景。本文利用sol - gel技術在摻錫的in _ 2o _ 3透明導電薄膜（ ito ）襯底和低阻硅襯底上成功地制備了pzt鐵電薄膜。運用了x射線衍射， sawyer - tower電路和lcr電橋分別對薄膜的晶化溫度，結構和電學性能進行了測試。
  10. The preparation of gold electrode of double layers and the spectroscopic and electrochemical studies when it was incubated with bacteria : cv measurement demonstrated that the defect content within the double layer gradually decreased during the incubation, sers showed that the film structure became order during the incubation and the bands of double and triple bonds shifted toward high wavenumber, too

    循環伏安測試表明在雙分子層與細菌培養的過程中，雙分子中層中的的缺陷數量逐漸減少。表面增強拉曼光譜證實在雙分子層與細菌培養的過程中，雙分子中層的膜結構變得更加有序，且其雙鍵與三鍵的共振峰也同時向高波數的方向移動。
  11. Preparation of film - coated bear bile tablet

    熊膽薄膜包衣片的研製
  12. It is noted that no displacement of ft ~ lr adsorption of rnse occurred after the preparation of lb film compared wtth that prior to the preparation. wth the thickness of lb filin incrasing, the peak value of adsorption is of the tendency of increasing which indhates that lb film can deposit even and effeetively

    Hihb的成膜性能及吸附蛋白質的研究（ l ）用langmuirra天平研究了不岡酸度的亞相對hihb成膜性能的影響，結采腦刃，堿性亞相中hihb的成膜性能較佳。
  13. This work is based on the preparation, characterization, and processing of high - k materials ba0. 8sro0. 2tio3 thin film capacitor was deposited using mod technique with highly controlled precursor solution

    採用封閉式迴流系統和廉價的ba和sr的醋酸鹽為前軀物成功制備了不同厚度的bst薄膜，觀察了薄膜厚度對其電學性能的影響。
  14. For the preparation of coated conductors, one of the most important issues is the growth of seed layer ( the first buffer layer ), which provide a continuous, smooth, and chemically inert surface for the growth of the ybco film while transferring the biaxial texture from the substrate to the htsc layer

    在二代塗層導體中，第一層過渡層（也稱為種子層）起著順延織構和阻擋基帶與超導層之間互擴散的重要作用，因此，種子層是塗層導體制備的關鍵。
  15. This paper mainly studied the factors that influence the preparation of limn2o4 film on stainless steel by chemical solution deposition method

    本文主要研究化學溶液沉積法在不銹鋼基體上制備limn2o4薄膜的工藝和影響因素。
  16. Influence of preparation conditions of nanosized tio2 film on performance of photocatalytic degradation of cokey waste water

    二氧化鈦納米膜制備條件對煉焦廠廢水光催化降解性能的影響
  17. With the development of thin film science and technology, various thin film preparation techniques developed rapidly, as a result, conventional so - called filming has developed from single vacuum evaporation to many new film preparation techniques, such as ion plating, sputtering, laser deposition, cvd, pecvd, mocvd, mbe, liquid growth, microwave and mtwecr, etc., of which vacuum evaporation is the common technology for thin film preparation, because it has the distinct advantage of high quality of film deposition, good control - ability of deposition rate and high versatility

    隨著薄膜科學與技術的發展，各種薄膜制備方法得到了迅速發展，傳統的所謂鍍膜，已從單一的真空蒸發發展到包括蒸鍍、離子鍍、濺射鍍膜、化學氣相沉積（ cvd ） 、 pecvd 、 mocvd 、分子束外延（ mbe ） 、液相生長、微波法及微波電子共旋（ mwecr ）等在內的成膜技術。其中電子束蒸發技術是一種常用的薄膜制備技術，它具有成膜質量高，速率可控性好，通用性強等優點。
  18. Sige simox ; 3. sige smart - cut and behavior of sige / si he terostructure implanted with hydrogen. sige film preparation : sige films were grown on silicon substrate using solid source molecular beam epitaxy ( ssmbe ), gas - solid source molecular beam epitaxy ( gsmbe ) and ultra high vacuum chemical vapor deposition ( uhvcvd ) technologies

    Sige薄膜生長方面：在熟悉各種薄膜外延技術的基礎上，採用了近年來發展較為成熟的固態源分子束外延（ ssmbe ） 、氣-固態源分子束外延（ gsmbe ） 、超高真空化學氣相淀積（ uhvcvd ）三種sige薄膜外延技術，在硅（ 100 ）襯底上外延生長了sige薄膜。
  19. Sige - on - insulator ( sigeoi ), which appears very recently, integrates both the advantages of soi and that of sige and thus attracts much attention for the potential applications in low voltage, low power consumption, high dense integrated circuits and optoelectronics, system on chip etc. but people are in the very beginning of the sige - oi material fabrication research. this work focuses on these three facets : 1. sige film preparation ; 2

    本論文結合以上背景，主要進行了以下幾個方面的研究：一、硅基上sige材料的異質外延生長技術，以及sige薄膜的表徵；二、 sige - oi的simox制備工藝研究；三、 sige - oi材料的smart - cut制備工藝研究，以及sige / si異質結結構中注入h離子的物理效應。
  20. Laser - ablation technique is a powerful and available method, and has been widely used in many important fields, such as thin film preparation, nano - technique and element analysis. in the course of laser - ablation, the ejected species is normally called laser ablation plasma, and its processes of production and expansion are very complex

    脈沖激光燒蝕技術在材料處理、薄膜制備、納米技術、微量元素分析等領域的應用越來越廣泛，但激光-固體相互作用、等離子體的形成及膨脹等過程尚未完全清楚。
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