found in good and due form 中文意思是什麼
found in good and due form
解釋
確認無誤- found : adj （文藝作品等）找到的，拾得的，揀到的，自然形態的〈不是創作的，而是由藝術家對天然物或已有的文...
- in : adv 1 朝里，向內，在內。 A coat with a furry side in有皮裡子的外衣。 Come in please 請進來。 The ...
- good : adj （better; best ） （opp bad）1 好的，良好的；漂亮的，優美的。2 愉快的，幸福的。3 善良的，有品...
- and : n. 1. 附加條件。2. 〈常 pl. 〉附加細節。
- due : adj 1 （債款等）當付的，應該付給的；（票據等）到期（的），滿期（的）。2 （車、船等按時間）應到達...
- form : n 1 形態；形狀；樣子，外貌；【哲學】形式 （opp content）。2 人影，物影。3 格式；表格紙 （＝ 〈美...
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An analytical mosfet threshold voltage shift model due to radiation in the low - dose range has been developed for circuit simulations. experimental data in the literature shows that the model predictions are in good agreement. it is simple in functional form and hence computationally efficient. it can be used as a basic circuit simulation tool for analysing mosfet exposed to a nuclear environment up to about 1mrad. in accordance with common believe, radiation induced absolute change of threshold voltage was found to be larger in irradiated pmos devices. however, if the radiation sensitivity is defined in the way we did it, the results indicated nmos rather than pmos devices are more sensitive, especially at low doses. this is important from the standpoint of their possible application in dosimetry
該模型物理意義明確，參數提取方便，適合於低輻照總劑量條件下的mos器件與電路的模擬。並進一步討論了mosfet的輻照敏感性。結果表明，盡管pmos較之nmos因輻照引起的閾值電壓漂移的絕對量更大，但從mosfet閾值電壓漂移量的擺幅這一角度來看，在低劑量輻照條件下nmos較之pmos顯得對輻照更為敏感。
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