four-point probe measurement 中文意思是什麼

four-point probe measurement 解釋
四探針測量
  • four : n 1 四人小組；（套在車上的）四匹馬。2 四的記號；（骰子的）四點；（鐘點的）四時；四歲。3 〈pl 〉 ...
  • point : n 1 尖頭，尖端；尖頭器具；〈美國〉筆尖；接種針，雕刻針，編織針；小岬，小地角；【拳擊】下巴。2 【...
  • probe : n 1 【醫學】探針；探示器；取樣器；【物理學】試探電極。2 【醫學】（對傷處等的）針探，探查；刺探；...
  • measurement : n. 1. 測量，計量，量度。2. 份量，尺寸，大小，寬度，厚度，深度（等）。3. 測量法。 measurement goods （按體積、容積計算的）體積貨物。
  1. This is the first time in this field. 2. putting forward rymaszewski method to square four point probe measurement

    利用rymaszewski法自動消除探針縱向游移影響的優點，將它應用於方形探針測試法中3
  2. Many important properties of semiconductor devices are relevant with their resistivity, which brings forward strict demands to the uniformity of the resistivity. especially micro - area ' s characteristics attract extensive attention. under this background, four - point probe measurement technique requires a new development

    許多器件的重要參數與電阻率有關，因此這對晶體電阻率的均勻性，電學特性提出了更為嚴格的要求，特別是微區的電特性和均勻性引起了人們的廣泛關注。
  3. Four - point probe measurement technique is one of the most extensive means for examining the resistivity in the semiconductor industry. with continuous progress, semiconductor industry develops at a very fast speed, the integration level of ic becomes higher and higher. presently, the ic production is entering into the age of ulsi, then testings are more and more important

    四探針測試技術是半導體工業檢測電阻率時採用最為廣泛的測試手段之一。隨著時代的不斷進步，半導體產業飛速發展，以單晶矽片為襯底的集成電路集成度越來越高，目前正進入甚大規模集成電路（ ulsi ）時代，測試在整個集成電路生產過程中的地位越來越重要。
  4. In this paper, the research actuality status of zno thin film ’ s structural character, preparation methods and electrical - optical properties is summarized. the effect of sputtering parameters, annealing parameters and doped sb2o3 on the structure, optical absorption and electrical properties of zno thin film is studied by sem, xrd, xps, eds, uv - vis spectrophotometer, hall effect detector, four - point probe electric resistance measurement and direct - current impedance measurement etc. the results of sem, xrd and edx show that zno thin film possesses good processing stability

    本文在綜述zno薄膜的結構特性、制備方法和光電性能等現狀的基礎上，採用射頻磁控濺射技術制備了純和sb _ 2o _ 3摻雜的zno薄膜，採用sem 、臺階儀、 xrd 、 xps 、 uv - vis分光光度計分析、電阻儀、阻抗譜儀等儀器設備分別研究了濺射工藝參數、退火工藝參數和sb _ 2o _ 3摻雜對zno薄膜結構特性、光吸收性能和電學特性的影響規律。
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