fwhm 中文意思是什麼

fwhm 解釋
半高寬
  1. Generally, an aperture radius of two to three times the fwhm of the psf is a good value

    一般的，孔半徑設置為點擴展函數的半寬值的兩到三倍比較好。
  2. The software will display the snr, fwhm and rms values found

    軟體將顯示它們的信噪比，點擴展函數和均方差值。
  3. We obtained a high quality zno thin film with the pl fwhm of 94 mev at 900. the free exciton binding energy deduced from the temperature - dependent pl spectra is about 59 mev at 900, suggesting that the film quality can be improved by annealing process

    當退火溫度為900時獲得了高質量的氧化鋅薄膜，光致發光譜的半高寬為94mev ，通過變溫實驗得到激子束縛能為59mev ，表明退火過程提高了薄膜的質量。
  4. Fwhm full width half maximum

    譜線最大寬度
  5. The lattice parameter, a0, and fwhm of the uo2 + x ( fluorite type ) decrease initially and stabilize later as the increasing of reaction times at 200. the uo2 + x is progressively replaced by u3o8 as the oxidation proceeds at 300

    200條件下，金屬鈾表層所形成的氟化鈣結構的uo _ （ 2 + x ）的點陣參數a _ 0和fwhm隨著氧化時間的增加逐漸減小，然後出現穩定。
  6. After measuring dark current, photocurrent and response to x pulse of gaas detector before and after 1. 7 mev electronic radiation, the response tune, fall time of trailing edge, full width of half maximum ( fwhm ), sensitivity, carrier life, mobility are researched and contrasted. the result shows that the response speed of detector, time resolution ratio and nonlinear of back edge of output signal have been improved greatly after electronic radiation. though sensitivity of the detector reduces, its measuring range can be widened

    為了使探測器的性能得到進一步的提高，我們對其進行了電子輻照改性，並測量了本徵砷化鎵探測器和經過1 . 7mev電子輻照的探測器的暗電流、光電流及對x射線的脈沖響應，並對其響應時間，后沿下降時間，半高寬（ fwhm ） ，載流子壽命，靈敏度進行對比，研究，結果顯示經電子輻照后的探測器的性能得到了改善，使響應速度，分辯率進一步提高，並消除了探測器輸出信號后沿的非線性，雖靈敏度有所降低，反而使其測量范圍得以拓寬。
  7. Another phase, the high temperature phase, is hexagonal with space group p - 62m, which is stable from 300 to 800. the lattice parameter and the full width of half maximum ( fwhm ) of xrd peaks of u3o8 were also investigated at different temperature, and it were found that they change with the temperature under rules

    在兩種相結構各自穩定的溫度范圍內， u _ 3o _ 8的點陣參數以及衍射峰半高寬（ fwhm ）出現了有規律的變化，這種變化表明u _ 3o _ 8的晶體結構依賴于環境溫度的變化。
  8. The fwhm of pl decreased with increasing temperature at first, then it increased with increasing temperature

    當znse生長時間縮短時，其77k的pl譜峰藍移增大。
  9. By use of g. d. shen ' s tunneling cascade theory we have fabricated high performance and high power tunneling cascade ingaas / gaas / algaas 950nm / 990nm double wavelength strained quantum well lasers on the basis of former tunneling cascade high power lasers and high brightness light emitting diodes. the lasers " two peak wavelength are 95 ? nm and 990 ? nm. el spectrum ' s fwhm is 3nm

    在以往隧道級聯大功率應變量子阱激光器及高亮度發光管的理論研究與實驗的基礎之上，採用沈光地教授提出的隧道級聯思想，成功研製出基於ingaas gaas algaas材料的高性能大功率隧道級聯950nm及990nm雙波長應變量子阱激光器，激射波長分別為952 2nm和990 2nm ， el譜的譜線寬度約3nm ，未鍍膜器件單面最大輸出光功率可達2w以上，閾值電流最低達120ma 。
  10. With optimized buffer layer growth parameters, gan epilayer with improved quality has been grown, whose fwhm of ( 0002 ) plane dc - xrd rocking curve is 6 arcmin

    以優化的緩沖層生長條件得到質量有明顯改善的gan外延層， gan薄膜的（ 0002 ）面雙晶dc - xrd掃描的半高寬為6arcmin 。
  11. Our group has prepared nanometer - scale metal films in layer structures on glassy carbon ( gc ) substrate by cyclic voltammetric deposition. by using co as probe molecule, we have revealed for the first time, abnormal ir effects ( aires ) on these layer nanostructured films. the alres consists of several abnormal ir features including the enhancement of ir absorption, the inversion of ir band direction ( anti - absorption ), and the increase of fwhm ( increase of the number of different adsorption sites )

    本研究小組採用電化學循環伏安電沉積法在gc基底上制備層狀納米結構金屬薄膜，以co作為分子探針，觀察到異常紅外效應（ aires ）光譜特徵，即co等探針分子發生紅外吸收增強、紅外譜峰方向倒反（反吸收）和譜峰變寬（振動能級離散程度增加） 。
  12. The other has two metal - insulator - semiconductor ( ms ) contacts with lower leakage current ( less than 4 pa, 300v ) and better energy resolution ( about 10 % fwhm for 241am 59. 5kev line ) and poor working stability. in theoretical studies, the analysis on the phase equilibrium in the vapor growth of cdse single crystals shows that the stoichiometry of cdse crystals can be controlled effectively by controlling the stoichiometry of starting materials and the vapor growth temperature. besides, the investigation of the transporting properties of charge carries in cdse detectors indicates that the noise in energy spectrum detected by using the detectors with msm structure is caused by the hole injection, which is induced by electron injection and the light injection

    本文把cdse單晶體的生長、單晶體的成分、單晶體的性能以及單晶體在室溫核輻射探測器中表現出來的性能結合起來進行了比較系統的研究；採用垂直無籽晶氣相提拉法生長出了電阻率為10 cm量級、尺寸為中10mm 30mm的單晶體；制備出了能量解析度達10 （ fwhm ） （對~ （ 241 ） am59 . 5kev譜線而言）的cdse室溫核輻射探測器，取得了較好的研究結果。
  13. It is found from the experiment that under the conditions of peak magnetic field of 0. 57t, beam pulse fwhm ( full width of half maximum ) of 44ns, a microwave radiation pulse with fwhm 25ns and whole width of 35ns is produced, when the intensity of the guiding magnetic field rises, the peak microwave power changes little but the width of the pulse reduces. the a - k gap also has obvious influence on the microwave radiation, the stable and higher microwave output is obtained under suitable gap

    實驗中還發現，在峰值磁場0 . 57t和束流半高寬44ns情況下，得到了25ns半高寬和35ns底寬的微波脈沖信號，隨著導引磁場增加，微波信號幅值基本不變，但國防科學技術大學研究生院學位論文是微波脈沖寬度會逐步減少;實驗中還發現磁場線圈位置有一定的軸向調節范圍，說明在磁場軸向分佈的一定變化范圍內，器件都可以正常工作，這對以後的永磁場系統導引的微波實驗有利。
  14. The size of the zno nanocrystal grain was so little that the quantum confinement effect should be considered. that makes the band gap wide. atom transfer rate is affected by the substrate temperature, and the average size of the zno nano crystal grain increases with the increasing substrate temperature resulting in the red shift of pl emission position and the narrowness of pl fwhm

    低溫生長的氧化鋅晶粒小，考慮到量子限制效應，禁帶寬較大；襯底溫度影響吸附原子遷移能力，隨著溫度升高，晶粒的尺寸增大，分佈變的均勻，因而發光峰位隨著襯底溫度的升高而紅移，發光的半高寬變小。
  15. When the time of heat preservation prolonged, the intensity of most orientation of perovskite phase became stronger, and the full width at half maximum ( fwhm ) decreased. when the time of heat preservation was 80 seconds, the intensity of ( 100 ) and ( 110 ) orientation began to decrease

    循環次數從1次增加到3次， plt薄膜的（ 100 ）和（ 200 ）峰的衍射強度逐漸增強，薄膜的結晶性提高，鐵電性能逐漸增強，循環4次濺射后，薄膜的結晶性和鐵電性開始下降。
  16. The spectra parameters of these crystals can be calculated by the f - l formula, which show that the crystals are applicable for the tunable laser and femtosecond laser because of their large emission broadband ( fwhm 50nm )

    用f ? l公式計算了晶體yb3 +的2f7 / 2 2f5 / 2能級躍遷的發射截面、輻射躍遷幾率、輻射壽命等光譜參數。
  17. The fwhm of pl at 650c is the narrowest. the variation of pl with excited intensity and temperatures were discussed respectively

    當生長溫度到達680時，光致發光譜變成由兩個峰組成。
  18. ( 211 ) reflection of the polycrystal a - iron sample is used in the simulation experiments, and both the resulting full - width - at - half - maximum ( fwhm ) of the diffraction peaks and peak shifts under tensive and compressive strain are in accord with that expected from analytical methods. the instrumental resolution curves, under various combination of the first collimator and second collimator and take - off angle of the monochromator, are given

    用- fe多晶樣品的（ 211 ）晶面進行了模擬實驗，得到的衍射峰半高寬以及拉應變和壓應中國原子能科學研究院博士學位論文變作用下衍射峰移動的模擬結果都與解析方法的預期值符合得很好。
  19. The experiment with cr4 + : yag of 30 % and 63 % initial transparence was conducted in plane - convex unstable resonators and get the laser ' s fwhm and output energy are accordingly 8ns and 52mj, 18ns and 45. 7mj. it is proved that the nearer the max initial transparence is the initial transparence, the stronger intensity and smaller fwhm can be obtained cr4 + : yag crystal, which is consistent with the theoretical results. in addition, the experimental results acquired in different resonator structures and parameters are also analyzed

    在平-凸非穩腔中，採用初始透過率為30和63的cr ~ （ 4 + ） yag進行實驗，得到能量和脈寬相應為52mj 、 8ns和45 . 7mj 、 18ns的調q脈沖輸出，這表明：採用初始透過率越靠近最大初始透過率的cr ~ （ 4 + ） yag ，可得到越理想的實驗結果，這與理論分析一致。
  20. No high - temperature pre - heat - treatment of the si substrate was used to obtain epilayers. the zns epilayer quality was improved with decreasing the substrate temperature. the small x - ray diffraction fwhm was obtained at 300, which implied that the zns epilayers had higher quality

    隨著生長溫度的降低， zns單晶薄膜質量提高，由在300時得到較小x -射線衍射fwhm的結果表明獲得了結晶質量較高的zns單晶薄膜。
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