gate trap 中文意思是什麼
gate trap
解釋
閘門阱-
The first step is the creation of trap centers in ultra - thin gate oxides by hot electron injection, and the second step is oxides breakdown induced by hole trapping
首先注入的熱電子在超薄柵氧化層中產生陷阱中心,然後空穴陷入陷阱導致超薄柵氧擊穿。 -
We can obtain the trap density by measuring the change of gate voltage of mos capacitance under constant current stress and the change of high frequency c - v curve before and after the stress
該方法根據電荷陷落的動態平衡方程,測量恆流應力下mos電容的柵電壓變化曲線和應力前後的高頻cn曲線變化求解陷階密度。 -
Solving process of trap density and extracting of correlative parameters in thin gate dielectric
薄柵介質陷阱密度的求解和相關參數的提取 -
With taking advantage of the model of two - stage h + process of interface trap formation and the role that f play in radiation hardness in gate - oxide. the above - mentioned result is deeply analyzed
藉助界面態建立的h ~ +兩步模型和f在柵氧化層中對抗輻照加固所起的作用對上述結果進行了深入的分析。
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