growth interface 中文意思是什麼
growth interface
解釋
生長界面-
Controlling solid - liquid interface configuration during crystal growth of cdznte by vertical bridgman method
晶體時固液界面形狀的控制 -
The experimental results show that the variation range of cd content in different sections cut along the axes increases with the growth process, which reflects that the interface depth also becomes larger
表明生長界面形態隨著生長的進行逐漸加深。理論計算出p單相區的液固界面深度在生長過程中的變化規律與實驗結果相一致。 -
In addition, it was the sign of the initial amplitude growth rate, not the manner of the interface motion that determined whether the amplitude could increase. at weakly nonlinear stage, mode - coupling equations were derived in cylindrical and spherical geometries. it showed that the nonlinear terms were inversely proportional to the position of the interface in cylindrical and spherical geometries
在弱非線性階段，推導了柱和球幾何中模耦合方程，結果表明：非線性作用項反比于界面的位置，界面的位置越小，非線性作用越強，反之越弱；同時柱幾何中模耦合方程的解表明，在收縮幾何中，擾動在界面兩側的發展是不對稱的，在弱非線性階段，不穩定性向內發展的部分受到慣性力的擠壓，而向外發展的部分受到慣性力的拉伸。 -
In the paper we mainly researched space gainp2 / gaas / ge high efficiency tandem cells " making process by home - made low pressure mocvd technology and new solar concentrators. firstly, we presented reseached and development of solar cells in china and foreign countries ; secondly, on the basis of fundamental priciples and theories, we discussed some factors of influcing conversion efficiency of solar cells, and analysed the i - v output feature of two - junction tandem cells ; then the design concept of gainp2 / gaas / ge two - junction tandem cells was discussed, the detailed aspects of gainp2 / gaas / ge tandem cells epitaxy growth by low pressure mocvd was studied, and some questions on epitaxy growth ( such as crystal qualities, interface stress, element interdiffusion, n - and p - type doping et all ) were solved ; after that, the cell fabrication process was described ; finally, we reseached the hot pressing and mould process technology of an arched line - focus fresnel lens made by pmma, designed and fixed new solar concentrators
本文致力於用自製的低壓mocvd裝置進行cainp _ 2 / gaas / ge空間用高效級聯太陽能電池製作的工藝以及聚光太陽能電池組件的研究。首先，介紹了國內外太陽能電池的研究現狀及應用情況；其次，運用太陽能電池基本原理討論影響電池轉換效率的因素，分析了級聯電池的伏安特性；隨后，討論了cainp _ 2 / gaas / ge雙結級聯電池的結構設計理念，研究了採用低壓mocvd技術生長cainp _ 2 / gaas / ge級聯太陽電池材料的工藝過程，解決了異質材料生長的結晶質量、界面應力、材料互擴散以及材料n 、 p型摻雜等一系列問題；然後總結了級聯電池的后工藝製作；最後，研究了以pmma為材料的菲涅耳線聚焦透鏡的熱壓成型工藝及其模具的加工工藝，設計並安裝完成新型聚光太陽能電池組件。 -
Abstract : while we were analyzing the proposed theory about the crystal growth, we doubted that the interface phase existed in the process of crystal growth. with this, we had looked for a lot of references connected and analyzed them. we find that the interface - phase does exist in the process of crystal growth and takes a critic role. therefore, we divide the interface - phase into three co - relative parts : interface layer, adsorptive layer and transitive layer. base on the above ideal, we demonstrate the role of interface layer, adsorptive layer and transitive layer in the process of crystal growth respectively. furthermore, we proposal the interface - phase model about the crystal growth
文摘:在分析前人的晶體生長理論時，作者認為晶體生長過程中可能存在界面相；在分析各種晶體生長現象后認為，晶體生長過程中界面相是存在的，並起著十分重要的作用；通過分析研究，將晶體生長過程中的界面相劃分為3個有機的組成部分：界面層、吸附層和過渡層；並進一步論述了界面層、吸附層和過渡層在晶體生長過程中的地位與作用；在此基礎上提出了界面相模型。 -
Abstract : the affects of crystal absorption for heat radiation on crystal growth, which include : the heat loss of the hot grower, the chara - cteristic of temperature - time of crystal growth, the pattern of fluid flow and the shape of interface, the interface inversion of crystal, the temperature distribution and the thermal stress distribution, are reviewed in this paper
文摘:本文綜述了晶體對熔體熱輻射吸收對晶體生長的影響，包括對熱腔熱耗散的影響；對晶體生長溫度時間特性的影響；對液流形態和固液界面形狀的影響；對晶體界面反轉的影響；對晶體中溫度分佈和應力分佈的影響。 -
Xps depth measurement suggested that the films were compositionally homogeneous along the growth direction ; that the interdiffusion between znsxse1 - x and ito was not serious in this deposition process ; and a sharp interface had developed
Xps深度剖析顯示所制備的薄膜，其內部成分均勻，無偏析和凝聚，界面清晰而陡峭，擴散不嚴重。 -
Combining the unstable heat conduction in crystal layer with heat transfer of undeveloped slug flow in a vertical tube, a time - progression model of crystal layer growth in the bubble column crystallizer pipe is proposed, the calculation results from the numerical method agree well with the experimental data. under certain operating conditions, the periodical arrival of gas plugs can cause crystallization and partial re - melting occur in the crystal - melt interface
結合未充分發展彈狀流的傳遞特徵和晶層內不穩定導熱，提出了鼓泡塔結晶器管內晶層生長的時間級聯模型，與實驗值吻合良好.特定操作條件下，隨彈狀泡的到來和離去，結晶界面可發生結晶-部分重熔 -
The growth of lamellae at the interface of the banded spherulites was studied in situ using atomic force microscopy ( afm ) with a hot - stage
研究表明，片晶的扭轉不是一個漸變的過程，而是發生在相對較窄的區域。 -
For the optimization problem of fgms fracture performance, this paper fundamentally studies the fgm coating plate with interface edge - cracks, and establishes the approximate analysis method of the driving force for interface edge - cracks growth - energy release rate. this paper considers energy release rate as objective function and the optimization problem of fgms fracture performance is carried out by the paper mention optimization scheme
關于梯度材料破壞性能的優化設計問題，本文對含邊界界面裂紋的平板狀梯度塗層進行了初步的研究，建立了邊界界面裂紋擴展驅動力- -能量釋放率的近似分析方法，以能量釋放率為優化設計目標函數採用本文提出的優化設計方案對梯度材料的破壞性能進行優化設計。 -
Through the competition of ionization equilibrium of zno22 - and precipitation reaction, the nucleation and growth process of znse have been adjusted, and monodispersed znse semiconductor hollow microspheres are obtained. these microspheres were found to form through aggregation of small znse nanocrystals sizes of which could be finely tuned by temperature control. a novel gas - liquid interface aggregation mechanism was proposed and this idea might be generalized in other systems
以zno22 -陰離子提供鋅源，利用它在強堿性溶液中緩慢釋放出zn2 + ，並與se2 -之間的電荷排斥作用，成功地調節了反應動力學，獲得了尺寸和分散性都非常均勻的微米級znse空心球，並實現了空心球內部粒子尺寸的調控，提出了新穎的氣液界面團聚機理。 -
Two concave interfaces in the mnxcd1 - xin2te4 ingots were found. the one near the tip is the transient interface from a + p phase growth to p phase growth and the other is that from p phase growth to in2te3 phase growth
晶錠中存在兩個凹形的相轉變界面，其中一個是由+相生長向相生長的轉變界面，另一個是由相生長向in _ 2te _ 3相生長的轉變界面。 -
The models can not only describe the morphology of coherent precipitate, reverse coarsening, atom ordering and interface evolution successfully, but also fit all stages into one physical model, including nucleation, growth and coarsening
該模型可成功地描述共格沉澱相的形貌、反粗化現象、原子有序化、界面的演化等，並將形核、長大和粗化在同一理論框架內考慮。 -
The am fungus could obtain adequate carbon resources for itself, thus ensuring normal growth and metabolic activit y owing to the efflux of carbohydrate from the plasma membrane of the host root cortical cells to the interface of the symbiosis. thirdly, the structure and composition of the root cortex cellular plasma membrane kept good integrity and the leakage of carbohydrate maintained at low level when the plant obtained enough p and metabolizes normally. although enough carbohydrate was synthesized by plant, the am fungi could not obtain enough energy, resulting in inhibition of growth of the extraradical hyphae and decreased metabolic activity of the am fungi
由此，我們認為植物磷營養狀況調控菌根真菌生長和代謝活性的機制是：當植物處于嚴重缺磷脅迫時，不能合成足夠的碳水化合物供給自身生長的需要，也不能向真菌提供額外的碳水化合物，因而菌根真菌生長受阻，代謝活性較低；當植物中度缺磷時，根皮層細胞質膜的組成和結構不完整，通透性大，碳水化合物通過質膜向外的滲漏量大，菌根真菌因而獲得充足的碳源，保證真菌正常的生長和旺盛的代謝；當植物獲得足夠的磷而使體內磷營養代謝正常時，其細胞質膜組成和結構完整，碳水化合物的滲漏量保持在較低的水平，盡管此時植物合成了足夠的碳水化合物，但菌根真菌仍不能獲得足夠的能量，導致真菌生長受阻和代謝活性降低。 -
Moreover, nh3 gas from dissociation of ( nh4 ) 3zncl5, analogous to the inert gas, can adjust the growth rate of znse and stabilize the vapor - solid interface, and avoid the difficulties of the non - emerging of sen ( n = 2 ~ 8 ) in selenium vapor. above all, ( nh4 ) 3zncl5 is a novel transport agent with comprehensive advantages
此外，該輸運劑可提供類惰性氣體nh _ 3而穩定氣固生長界面，並可避免了se _ n （ n = 2 - 8 ）共存所導致的se _ n相互競爭降低se分壓等工藝問題，是一種多功能的znse晶體氣相生長輸運劑。 -
Two different growth methods are used to prepare ultra - thin hflayers on si ( 001 ) substrate for the purpose of studying the initial stage of the hafniuin / si ( 001 ) interface formation
5單層hf原子于a （ 001 ）襯底，並繼之以最高至650的退火。上述測量結果表明hf在ao ）的室溫淀積模式是所謂的層層生長模式。 -
And production rules are used to express the expert ’ s knowledge. model bases and reasoning machine are accomplished by using visual basic 6. 0 programming technology ; interface follows the windows ’ pattern. the peanut cultivation expert systems can realize functions such as simulating and predicting peanut ’ s growth and development, designing peanut cultivation
該系統可以根據花生種植地區的氣候、土壤和生產條件，實現花生生長發育的模擬與預測、花生栽培方案的設計、花生病蟲害的診斷與防治、信息咨詢和花生知識學習等功能，並能夠通過知識庫管理和維護系統進行知識的修改、添加和刪除，實現知識的獲取和管理功能。 -
Simulative investigation of fatigue crack growth at steel - concrete interface
鋼筋混凝土界面疲勞裂紋擴展模擬研究 -
The slow growth rate of 0. 6mm / h and imm / h were used for reducing the depth of the growth interface
為減小界面的凹陷程度，採用了0 . 6mm h和1mm h兩種較低的生長速度。 -
The calculation results agree well with the experimental results. the depth of growth interface seriously affects the crystal quality
實驗測得mcit0lb晶體中， q什相區和p相區的徑向組分的變化范圍隨著生長的進行而逐漸增大。
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