hall effect 中文意思是什麼

hall effect 解釋
哈耳效應
  • hall : n 1 〈常作 H 〉（政治團體、工會等的）本部，總部，辦公大樓。2 會館，會場，會堂；展覽廳；娛樂場。3 ...
  • effect : n 1 結果。2 效能，效果，效力，效應，作用，功效；影響。3 感觸，印象；外觀，現象。4 旨趣，意義。5 ...
  1. The cdte films doped te are deposited onto glass substrate by close spaced sublimation. the x - ray diffraction data indicate the pure cdte films are polycrystalline zinc - blende structure with grain orientation predominantly along ( 111 ) direction. the electrical properties of cdte films are investigated by hall effect measurement using the van der pauw method

    X射線衍射分析表明，純cdte薄膜是立方閃鋅礦結構， （ 111 ）晶面取向生長； hall效應實驗測量發現薄膜電阻很高，呈p型電導，面電阻率數量級達1010
  2. Furthermore, in the noncommutative chern - simons theory for the quantum hall effect, the constrain equation with quasiparticle source is also identified with the moment map eqaution of the noncommutative sun ( t ) cotangent bundle with marked points

    而且，在量子hall效應的非對易陳- simons理論里，具有準粒子源的約束方程也與具有marked點的非對易su _ n （ t ）餘切叢的momentmap方程相同。
  3. Electric parameter test of semiconductor epitaxy slice based on hall effect

    基於霍爾效應的半導體外延片電參數測試
  4. After shortly reviewed the haldane ' s description of the quantum hall effect on 2 - sphere s2 and zhang and hu ' s generalization to 4 - sphere 54. we obtained the corresponding noncommutative algebra an and the moyal structure of the hilbert space

    在回顧了haldane在2維球面s ~ 2上對量子hall效應的描述和張首晟與胡江平對量子hall效應在4維球面s ~ 4上的推廣后，我們構造了s ~ 2和s ~ 4上的非對易代數及其hilbert空間的moyal結構。
  5. " for the discovery of the quantized hall effect

    發現量子霍耳效應並開發了測定物理常數的技術
  6. Again, because the ion influx technique have a little damnification on the skin - deep structure for the cdte thin films, among the experiment, we have let the doped cdte thin films be annealed a hour with n2 atmosphere at 500, and then slowly cooled until the room temperature. via the test and analyse, heat treatment has very important effect on the comeback of crystallattice surface disfigurements. finally, the films were characterized by x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), ultraviolet visible ( uv ) and the hall effect measurement

    再次，由於離子注入會對薄膜表面的結構造成損傷，本實驗把被注入離子的cdte薄膜在n2氣氛中500下退火1個小時，然後緩慢冷卻至室溫。經測試分析，熱處理對晶格表面缺陷的恢復有很重要的作用。最後，利用xrd 、 sem 、紫外可見分光光度計及hall測試系統研究其結構，表面形貌和光電性能。
  7. Hall effect displacement transducer

    霍爾效應磁強計
  8. The wo3 based gas sensor is based on hall effect

    摘要利用霍耳效應成功地研製了wo3月半導體氣敏傳感器。
  9. According to the requirements of oil salvage operation and ground equipment, research and develop a system to conduct the dynamic test on the speed and position of oil extractor, and the tension supported by steel wire, with c8051f330 single - chip microcomputer as the core module, hall - effect sensor and resistance sensor as the test components

    摘要根據撈油作業和地面設備的需求，研製一種以c8051f330單片機為核心，採用霍爾傳感器和電阻應變片作為檢測元件，實現付撈油抽子升降速度、位置和鋼絲拉繩所承受拉力的動態檢測系統。
  10. A test device was designed which tested the properties of thrust according the theory of electromagnetism scale. using the hall - effect sensor to measure the scale displacement that could be converted the magnitude of the thrust

    根據電磁天平的原理設計了一套微推力測試裝置，利用霍耳傳感器來測量推力產生的位移，進而通過計算轉換為推力器的推力大小。
  11. Preparation of samples of the constant composition region of epitaxial gallium arsenide phosphide for hall effect measurements

    測量霍爾效應用恆定成分范圍的外延磷化砷化鎵試樣的制備
  12. Adiabatic hall effect

    絕熱霍耳效應
  13. In 1982 professor tsui discovered the remarkable fractional quantum hall effect in his experimental studies of electrons in high - mobility semiconductor heterostructures placed in strong magnetic fields at very low temperatures. professor tsui and his co - workers found unanticipated plateaus in the hall conductivity, characterized by fractional quantum numbers, in contrast to the integral quantum hall effect discovered two years earlier

    崔琦教授於一九八二年發現限制在平面上運動的電子系統在強磁場、極低溫的條件下，形成一種奇異的量子液體，它的準粒子元激發具有分數電荷，遂呈現所謂分數量子霍爾效應。
  14. The conclution is that this gas sensor based hall effect is a prospective gas sensor of new type

    因此，利用霍耳效應製作氣敏傳感器是一條完全可行的新思路。
  15. In 1997, he was awarded the benjamin franklin award in physics for his contributions to the discovery of the fractional quantum hall effect, and in 1998, he received the nobel prize in physics

    1997年，由於他在分數量子霍爾效應的突破性發現，贏得美國富蘭克林物理學獎，並於1998年獲頒授諾貝爾物理學獎。
  16. Topics covered include crystal structure and band theory, density functional theory, a survey of properties of metals and semiconductors, quantum hall effect, phonons, electron phonon interaction and superconductivity

    內容包括了晶體結構和能帶理論，密度泛函理論，金屬和半導體特性概論，量子霍爾效應，聲子，電子-聲子的相互作用以及超導電性。
  17. Semiconductor materials was laid on the base, and the corresponding electrode was lead to. the semiconductor material has selective adsorption to the gas that changes the electronic concentration which also raises hall coefficient, corresponding changes the export of hall electromotive force, so the gas sensors which is based on hall effect was made

    當我們把半導體材料塗敷到基片上，並引出相應的電極，由於氣敏材料對個別氣體有選擇的吸附特性從而改變了材料中的電子濃度，也就引起了霍耳系數的相應變化，輸出的霍耳電動勢也跟著變化，就製成了基於霍耳效應的氣敏傳感器。
  18. Ss5 surface mount hall effect sensor

    Ss5系列霍爾效應表面貼裝傳感
  19. In the hall effect, hall electromotive force is not only related to the current density, magnetic field and the distance of the poles, but also to hall coefficient directly

    據知，霍耳效應中輸出的霍耳電動勢除了跟輸入的電流強度、磁場強度及輸出電極的間距有關外，還與霍耳系數成正比。
  20. Design of adjustable dc voltage sensor based on hall effect

    基於霍爾效應的可調式直流電壓傳感器的研製
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