heavily doped crystal 中文意思是什麼
heavily doped crystal
解釋
高摻晶體-
The crystal phase of as - deposited znte ( znte : cu ) films depends on the cu concentration in znte. znte films with un - doped cu and low cu doped ( 2. 98 % ) show cubic phases with preferred orientation of ( 111 ). heavily cu - doped films exhibit a mixture of cubic and hexagonal phases
剛沉積的znte （ znte ： cu ）薄膜的晶相結構取決于薄膜中的摻銅濃度，未摻銅和低摻銅（ 2 . 98 ）的薄膜為立方相，重摻銅（ 9 . 9 ）出現六方相和立方相的混合相。 -
For the substrate of heavily boron doped wafer, it has been proved that oxygen concentration is increased and oxygen precipitation is enhanced by hb ( heavily boron - doping ) during crystal growth, which is beneficial for ig and therefore improve the yield of ulsi
另一方面，在相同的晶體生長條件下，重摻硼硅單晶氧含量升高，氧沉澱被增強，能形成有效吸雜點，提高矽片機械強度，抑制void缺陷，有利於提高ulsi的成品率。 -
As is known to all, one of the most important characteristics of sige hbt is the strained sige base growing on the si substrate. generally, the base is required to be very thin so as not to cause the base sige crystal lattice mismatching in subsequent annealing process. also, in order not to increase the thermal noise of device, the base is always heavily doped
眾所周知， sigehbt的主要特點之一就是在si材料襯底上生長的sige材料是應變的，為了在後續的高溫退火工藝中不發生晶格馳豫現象，通常要求器件的基區要做的很薄，同時為了不增加器件的熱噪音，通常sigehbt基區都是高摻雜的。
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