heteroepitaxial 中文意思是什麼
heteroepitaxial
解釋
異質外延的-
Based on laser molecular beam epitaxy, the strain behavior and the corresponding control technology in oxides heteroepitaxial system, especially in ferroelectric thin films with perovskite structure, was systematically studied by using in situ reflected - high - energy - electron - diffraction ( rheed ). some original and meaningful results were obtained. following aspects were included in this dissertation : the structure of thin films is analyzed by rheed
本論文基於激光分子束外延的基本原理，以高能電子反射為主要監測工具，對氧化物薄膜特別是鐵電氧化物薄膜異質外延過程中應變行為及其控制方法進行了系統的研究，並取得了一系列有意義的結果，主要包括以下內容:利用反射高能電子衍射（ rheed ）的信息對薄膜結構進行分析。 -
The effect of lattice mismatch on the nucleation process of heteroepitaxial growth of ultrathin film
晶格失配對異質外延超薄膜生長中成核特性的影響 -
So it is an maximum challenge and difficulty to product heteroepitaxial big size high - orientation and single crystal diamond films and big area transparent diamond films in nodiamond substrate ' s surface for present diamond films " r & d
因此，目前金剛石薄膜研究面臨的最大挑戰和難點就是在非金剛石襯底表面異質外延生長大尺寸高取向和單晶金剛石膜以及制備大面積透明金剛石膜。 -
The heteroepitaxial growth of 3c - sic on si substrate not only unfurls the maturity of si process, but also incarnates the excellence of 3c - sic, so that it become for long researchful direction. due to the large lattice parameter mismatch ( ~ 20 % ) and the large thermal expansion coefficient mismatch ( ~ 8 % ), however, the 3c - sic / si study is very difficult
然而，由於3c - sic與si之間存在較大的晶格失配度（約20 % ）和熱膨脹系數差異（約8 % ） ，因此， 3c - sic / si異質外延薄膜的制備非常困難，仍存在許多技術問題需要克服。 -
The kinetic monte carlo method based on a solid - on - solid model has been introduced to simulate the insb heteroepitaxial growth. furthermore, transmission electron microscopy ( tem ) and hall measurements have been performed to study the interface structure and electrical properties of insb epilayers
在sos （ solid - on - solid ）模型基礎上採用動力學蒙特卡羅（ kmc ）方法模擬了insb薄膜的外延生長過程，同時採用透射電鏡（ tem ）與霍爾（ hall ）測試方法研究了薄膜的界面結構與電學性能。 -
Up to date, it is still very hard to grow gan bulk crystals, so the heteroepitaxial growth of high quality gan thin films is the premise for the development of gan - based devices. at the same time, the rapid progress on devices requires better ohmic contact between metals and gan, so much more research work must be carried out at once
由於gan體單晶難以制備，生長高質量的薄膜單晶材料是研究開發gan基器件的基本前提條件，同時器件的發展對電極的制備提出了更高的要求，因而研究金屬電極與gan的接觸成為必然。
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