high-resolution x-ray structure 中文意思是什麼

high-resolution x-ray structure 解釋
高分辨x射線結構
  • high : adj 1 高的〈指物，形容人的身高用 tall〉；高處的；高地的。2 高級的，高等的，高位的，重要的。3 高尚...
  • resolution : n 1 決心，果斷；堅定，剛毅。2 （議會等的）決定，決議（案）；【法律】〈罕用語〉判決；（疑問等的）...
  • x : X2＝ （羅馬數字）10 XX ＝ 20 IX ＝ 9 XV ＝ 15 XL ＝ 40 LX ＝ 60 XC ＝ 90 DXL ＝ 540 MX ＝ 1010 ＝...
  • ray : n 雷〈姓氏，男子名， Raymond 的昵稱〉。n 1 光線，射線，熱線；〈詩〉光輝，閃爍，曙光，一線光明。2 ...
  • structure : n. 1. 構造，結構；組織；石理，石紋。2. 建造物。3. 【化學】化學結構。4. 【心理學】（直接經驗中顯現的）結構性，整體性；整體結構。adj. -d ,-less adj.
  1. Wt has been applied to denoising, data compression, and resolution of overlapping signals in analytical chemistry that includes flow injection analysis ( fia ), voltammetric analysis, high performance liquid chromatography ( hplc ), infrared ( ir ) spectroscopy, mass spectroscopy ( ms ), nuclear magnetic resonance ( nmr ) spectroscopy, ultraviolet - visible ( uv - vis ) spectroscopy, photoacoustic spectroscopy ( pas ), extended x - ray absorption fine structure ( exafs ) spectrum, etc

    在分析化學領域中，小波變換在流動注射分析、伏安分析、高效液相色譜、紅外光譜、質譜、核磁共振譜、可見紫外光譜、光聲光譜、擴展x -射線吸收精細結構（ exafs ）譜等分析化學信號的平滑濾噪、數據壓縮、重疊信號解析等方面都有成功的應用。
  2. Sem, transmission electron microscopy ( tem ), x - ray energy - dispersion analysis ( edax ), xrd, electron diffraction ( ed ) and high - resolution electron microscopy ( hrem ) were used to investigate the morphology, atomic composition and crystal structure of the nanowires. the hexagonal cdse nanowires with single crystal structure have been obtained in dmso under 140. ( 3 ) semiconductor te and cdte nanowires embedded in aao templates were fabricated for the first time by dc < wp = 7 > electrodeposition in ethylene glycol

    Sem 、 tem 、 edax 、 xrd 、 ed 、 hrem分析的結果表明，所得cdse納米線為六方晶型，晶體的（ 001 ）晶面沿平行於基底的方向擇優生長，且隨沉積溫度的降低，這種擇優生長的趨勢越來越強；納米線晶體在生長時，由於受aao模板孔徑的限制，形成c軸方向拉長的晶粒，其長徑比達5 1以上；晶體的大小和完善程度隨沉積溫度的降低而增大， 185沉積得到多晶六方cdse納米線，而140沉積時可得到六方cdse單晶納米線。
  3. In this project we use etching method x - ray transmission and tem observe and study the form mechanism of cell structure and linear structure ; use sem observe cell structure directly and evaluate effect to the electrical properties of substrate ; at last, use high resolution tem and eds to observe and identify the nature of microdefects

    發現幾乎所有高位錯密度的si - gaas單晶的表層都具有網路狀胞狀結構或系屬結構，首次對該胞狀結構和系屬結構的形成機制進行了研究；直接觀察微缺陷，配合eds （能量色散譜）鑒定si - gaas中微缺陷的物理本質，同時分析其產生原因，討論與位錯的相互作用。
  4. More recent studies show nanowires products with narrow dismeter distribution around 5 - 10mn and lengths ranging from several hundred nanometers to several micrometers can be obtained if the mixture solution of naoh and koh was replaced by koh solution. the nanowires were analyzed by a range of methods including powder x - ray diffraction ( xrd ), high resolution electron microscopy ( hrem ), selected area electron diffraction ( saed ), electron energy loss spectroscopy ( eels ), xrd and hrem image simulations. the structure of nanowires is determinded to be of the type of k2ti6oi3

    利用x射線衍射（ xri ） ） 、高分辨電子顯微鏡（ hrtem ） 、選區電子衍射（ saed ） 、電子能量損失譜（ eels ）以及x射線衍射和高分辨像模擬等分析測試手段，初步分析了這種納米線的生長機理，探討了她的結構和光學性能，實驗結果顯示這種納米線具有kzti6o ; 3的結構，紫外一可見光吸收光譜顯示， kzti6ol3納米線禁帶寬度約為3 . 45ev 。
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