high-temperature plasma 中文意思是什麼

high-temperature plasma 解釋
高溫等離子體
  • high : adj 1 高的〈指物，形容人的身高用 tall〉；高處的；高地的。2 高級的，高等的，高位的，重要的。3 高尚...
  • temperature : n. 1. 溫度，氣溫。2. 體溫。3. 〈口語〉發燒，高燒。
  • plasma : n. 1. 【生理】血漿；淋巴液。2. 【生物學】原生質。3. （做藥膏用的）膏漿。4. 【礦物】半透明的綠玉髓。5. 【物理學】等離子（體）；等離子區。
  1. The direct application of eftl is flat panel displays. it has several preferences, emissive, wide view angle, quick response, wide working temperature range, high pixel resolution, anti - strike, long life, less number of fabrication process etc. all these properties are better than plasma display fed and lc

    它的主動顯示、平板化、視角大、反應快、工作溫度范圍寬、像素鑒別率高、抗震動、壽命長、工序少等特點，都勝過液晶、等離子體、 lc等顯示技術：第一章介紹了無機電致發光及有機電致發光的發展現狀和存在問題。
  2. Impulse heavy current technology, as one of the important researches of pulse power techniques, is also widely applied to technology of high - temperature plasma, strong magnetic field, mechanics effects and so on

    沖擊大電流技術是脈沖功率技術的重要研究內容之一，廣泛的用於高溫等離子體、強磁場、力學效應等研究領域。
  3. ( 2 ) the emission spectra of laser ablation metal copper plasma were measured. the detailed mechanism of plume emission of cu plasma was qualitatively explained using a simple model based on excitation of atom and ion in plume arising from inelastic collision between the elemental species and electron with high kinetic energy. under the local thermal equilibrium model, the electronic temperature of copper plasma was deduced to be in the 104 scale by its emission lines

    （ 2 ） cu等離子體光譜：在420 570nm波長范圍內觀測了激光燒蝕cu等離子體的光譜和各發射譜線在等離子體中的空間分佈；比較了激光能量對cu等離子體發射光譜、電子溫度的影響；用局部熱力學平衡（ lte ）近似，測得cu等離子體的電子溫度為104k數量級；在不同背景氣壓下，觀測了激光燒蝕cu等離子體光譜的空間分佈。
  4. The soi is of crystal quality and the box is uniform in thickness, with the interfaces of si / sioa / si smooth and sharp. we have systematically studied the dependence of the formed soi structure on the process parameters, such as ion energy, implantation dosage, substrate temperature, as well as the annealing temperature. with xtem, sims, srp, rbs, ir, raman, aes, xps and other characterization tools, it was found that a dose window at fixed energy for water plasma ion implantation to form high quality soi structure similar to the conventional simox process exists

    本論文還系統地研究了不同注入劑量、注入能量、注入時基底溫度以及退火溫度對所形成soi結構性能的影響，藉助xtem 、 sims 、 srp 、 rbs 、 ie 、 raman 、 aes 、 xps等測試分析手段，我們發現，與傳統注氧隔離（ simox ）技術類似，存在著「劑量窗口」形成優質的soi材料，但在水等離子體離子注入方式中soi材料結構質量對劑量變化更為敏感，隨著注入劑量的增大， soi材料的埋層厚度增大而表層硅厚度減小。
  5. In the hipib film deposition, high purity graphite was employed as target. relations between process parameters and the microstructure, as well as different physical properties of diamond - like carbon ( dlc ) film deposited by hipib ablated plasma were studied by adjusting the distance between target and substrate, which affects the intensity and ion energy of hipib ablated plasma, and the temperature of substrate in the film deposition processes. the mechanism of film deposition by hipib ablated plasma was explored also

    在薄膜沉積方面，利用高純石墨作靶材，調整薄膜沉積過程中的靶基距（燒蝕等離子體密度、離子能量）和基片溫度，研究實驗工藝對hipib燒蝕等離子體方法制備的dlc薄膜的微觀結構和宏觀物理性能的影響，探討了hipib燒蝕等離子體沉積dlc薄膜的成膜機理。
  6. In this dissertation, we mainly report on a laser - produced plasma ( lpp ) source with liquid aerosol spray target. for sufficiently high backing pressure and low temperature, the valve reservoir gas of the light source can undergo a gas - to - liquid transition

    液體微滴噴射靶激光等離子體（ lpp ）光源是一種具有較高的軟x射線轉換效率且能夠長期連續運行的低碎屑光源。
  7. The result shows that argon gas can not only promote the excitation of plasma at low pressure, but also improve discharge state, increase the density and activation of reaction radical and improve the quality of diamond films. on the other side, argon can cool the plasma and maintain low temperature of substrate due to its big ionization section and high collision probability with gas molecules

    結果表明，氣體系統中引入氬氣一方面不僅有利於維持低壓放電，而且改善放電狀態，提高反應活性基濃度和活性，提高低溫沉積金剛石膜的質量；另一方面，由於其大的電離截面使其和電子碰撞的幾率大大提高，對等離子體進行冷卻，有利於基片溫度的降低。
  8. However, the refractive index will increase with the increase of the flow ratio of sifu / nhs, slightly increase with the increase of substrate temperate, and decrease with the increase of rf power. by measuring the passivation results of hydrogen plasma and sinx thin film, we found an evident improvement of minor carrier lifetime in polycrystalline silicon after hydrogen plasma treatment, although it has little to do with the annealing temperature and time. the hydrogen contained in sinx thin film can enhance the carrier mobility of monocrystalline silicon, but after annealing at high temperature the mobility turns down

    通過測試氫等離子體鈍化和氮化硅薄膜鈍化的效果，實驗還發現氫等離子體處理對多晶硅材料的少子壽命提高作用比較明顯，但是這種提高作用與處理溫度以浙江大學碩士學位論文王曉泉2003年5月及時間的關系不大；氨化硅薄膜中的氫對單晶硅的載流子遷移率提高有一定作用，但經過高溫處理后這種作用消失；氮化硅薄膜能提高單晶硅和多晶硅的少子壽命，具有表面鈍化和體鈍化的雙重作用；氫等離子體和氮化硅薄膜都能有效地提高單晶和多晶電池的短路電流密度，進而使電池效率有不同程度（絕對轉換效率0
  9. Quantum chromodaynamics predicts that at high temperature and high density a deconfined phase from hadronic matter to quark - gluon plasma will occur

    量子色動力學預言在高溫高密條件下，有可能發生從強子物質到退緊閉的夸克-膠子等離子體的相變躍遷。
  10. Plasma nitriding is an application way to metal surface and heating treatment based on the formed plasma by glow discharge. nitriding is a way of heating treatment, namely, metal accessory is put into activate nitrogen and the gas of low light pressure is ionized into energy electrons, high energy ions and high energy neutral atoms by the action of the electric field under a definite temperature and the time of the heat preservation

    等離子滲氮是利用輝光放電形成等離子體在金屬表面，熱處理方面的應用，滲氮是強化金屬表面的一種熱處理方法，是將金屬零件置於活性氮的介質中，在一定溫度和保溫時間下，低光壓氣體在電場作用下使之電離產生能電子、高能離子和高能中性原子。
  11. Using the microwave selective heating property for materials, by setup equivalent equation, and first time inducing the electromagnetic field perturbation theory to the design of heating materials for substrate in mpcvd, three temperature distribution modes were established, including temperature distribution comprehensive mode of inhomogeneous plasma, temperature distribution composite mode of composite substrate materials, temperature distribution perturbation mode of composite materials, which ii provided an whole new technology route to the design of substrate heating system in mpcvd and guided the preparation of heating materials for substrate. and then the heating materials for substrate were designed and optimized to obtain large area homogeneous temperature distribution even larger than substrate holder ' s diameter. as an important part, this thesis researched the nucleation and growth of diamond films in mpcvd, systematically researched the effects of substrate pretreatment, methane concentration, deposition pressure and substrate temperature etc experimental technologic parameters on diamond films " quality on ( 100 ) single crystal silicon substrate in the process of mpcvd, characterized the films qualities in laser raman spectra ( raman ), x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), infrared transmission spectra ( ir ), atomic force microscopy ( afm ), determined the optimum parameters for mpcvd high quality diamond in the mpcvd - 4 mode system

    該系統可通過沉積參數的精確控制，以控制沉積過程，減少金剛石膜生長過程中的缺陷，並採用光纖光譜儀檢測分析等離子體的可見光光譜以監測微波等離體化學氣相沉積過程；利用微波對材料的選擇加熱特性，通過構造等效方程，並首次將電磁場攝動理論引入到mpcvd的基片加熱材料的設計中，建立了非均勻等離子體溫度場綜合模型、復合介質基片材料的復合溫度場模型及復合介質材料溫度場攝動模型，為mpcvd的基片加熱系統設計提供了一條全新的技術路線以指導基片加熱材料的制備，並對基片加熱材料進行了設計和優選，以獲取大面積均勻的溫度場區，甚至獲得大於基片臺尺寸的均勻溫度區；作為研究重點之一，開展了微波等離體化學氣相沉積金剛石的成核與生長研究，系統地研究了在（ 100 ）單晶硅基片上mpcvd沉積金剛石膜的實驗過程中，基片預處理、甲烷濃度、沉積氣壓、基體溫度等不同實驗工藝參數對金剛石薄膜質量的影響，分別用raman光譜、 x射線衍射（ xrd ） 、掃描電鏡（ sem ） 、紅外透射光譜（ ir ） 、原子力顯微鏡（ afm ）對薄膜進行了表徵，確立了該系統上mpcvd金剛石膜的最佳的實驗工藝參數。
  12. High temperature plasma dynamics

    高溫等離子體動力學
  13. An ion implanter without ion mass analyzer was applied to simulate the phi procedure to fabricate soi materials by implantation of water plasma ions. thin soi structure was successfully fabricated by the implanter using 50 ~ 90kev water plasma ion implantation with the dose ranging from 2 - 6. 5 + 017cm - 2 and, subsequently, the high temperature annealing

    我們使用無質量分析器的離子注入機，模擬等離子體離子注入過程，成功地在該注入機上用水等離子體離子注入制備出了界面陡峭、平整，表層硅單晶質量好，埋層厚度均勻的薄型soi材料。
  14. Rf plasma system 9200 is a barrel - type batch stripping system with optional high temperature capabilities for photoresist removal, nitride etch, and other cleaning applications in semiconductor and mems fabs

    射頻等離子體9200是桶式爐脫模體，擁有可控制的高溫系統可去除光阻材料、氮化物蝕刻和半導體與微型機電系統等方面的清洗功能
  15. The applications field of fgm include aerospace, electron, chemistry, biology and medicine fields ; the composition change also from metal / ceramic to metal / metal, metal / alloy, non - metal / non - metal and non - metal / ceramic. moreover, various methods including powder metallurgy, self - propagating high - temperature synthesis ( shs ), chemical and physical vapor deposition ( cvd and pvd ), electrodeposition, laser cladding method, plasma sputtering and sol - gel method have been studed. metal organic chemical vapor deposition ( mocvd ), using chemical vapor deposition of metal organic compounds, is an effective method for acquiring special function materials and membrane

    功能梯度材料是21世紀最有發展前景的新型材料之一，其用途已由原來的宇航工業，擴大到核能源、電子、化學、生物醫學等領域；其組成也由金屬?陶瓷發展成為金屬?金屬、金屬?合金、非金屬?非金屬、非金屬?陶瓷等多種組合；其制備方法主要包括粉末冶金法，自蔓延高溫合成法（ shs ） 、氣相沉積法（ cvd和pvd ） 、電沉積法，激光熔覆法，溶膠?凝膠法（ sol - gel ）等。
  16. Spark plasma sintering ( sps ) is a kind of new sintering technology for materials synthesis and processing, it has such advantages as high sintering speed, low sintering temperature, it also can retain the origin state of the sintered materials, as such make the sintered materials keep the state of un - equilibrium in this paper, sps was conceived of treating iron covered silicon powder to keeping the origin state of the powder

    放電等離子燒結（ sparkplasmasintering簡稱sps ）是一種材料快速制備新技術，它具有燒結速度快，燒結溫度低，使燒結材料處于遠離平衡狀態，並能保持材料的原有狀態等重要特點。本文設想制各出鐵硅包覆粉末，再利用sps進行遠離平衡狀態的處理，來獲得保持原始粉末自然狀態的合金塊體。
  17. During large power laser beam welding, the surface of the work - piece is melted and gasified, which is ionized and form plasma with the shielding gas on the condition of high temperature over the welded zone

    在激光焊接過程中，當被焊材料受到高能激光束作用時，其表面會迅速熔化、氣化，與外加的保護氣體一起在被焊區域的上方電離形成等離子體雲。
  18. In this paper, we employ the plasma enhanced chemical vapor deposition ( pecvd ) to prepare high quality zno thin film at low temperature using a zinc organic source ( zn ( c2h5 ) 2 ) and carbon dioxide ( co2 ) gas mixtures. the effect of the substrate temperature and annealing temperature on the quality of zno thin films was studied in detail

    為了在低溫下制備高質量的氧化鋅薄膜，我們採用金屬有機源和二氧化碳氣源，首次利用等離子體增強化學氣相沉積的技術在低溫下制備了高質量的氧化鋅薄膜，確定了生長高質量氧化鋅薄膜的優化條件；研究了不同的襯底溫度和退火溫度對氧化鋅納米薄膜質量的影響。
  19. In order to otain high quality zno thin films, we, for the first time, employ the plasma enhanced chemical vapor deposition ( pecvd ) to prepare high quality zno thin film at low temperature using a zinc organic source ( zn ( c2h5 ) 2 ) and carbon dioxide ( co2 ) gas mixtures. the effects of the growing condiction and the native oxide layer of si substrate on the quality of zno thin films was studied in detail. to prepare p - zno and overcome the dufficulty of reverse due to the interaction between the n atomic, we obtain high qulaity p - zno by a easy way of thermal zn3n2

    為了在低溫下制備高質量的氧化鋅薄膜，我們採用金屬有機源和二氧化碳氣源，首次利用等離子體增強化學氣相沉積的技術在低溫下制備了高質量的氧化鋅薄膜，系統地研究了生長條件以及襯底表面氧化層對薄膜質量的影響，確定了生長高質量氧化鋅薄膜的優化條件；為獲得p - zno材料，克服在zno中摻n雜質間相互作用影響摻雜效率不易獲得p - zno的困難，我們通過熱氧化zn3n2的方法制備了p - zno ，獲得了一系列研究結果： 1 、詳細研究了氣體流速比，襯底溫度和射頻功率實驗參數對氧化鋅薄膜特性的影響。
  20. On the basis of the low - temperature plasma treat the surfaces of the fibres, a subject about the application of artifigial neural network in the low - temperatuer plasma surface treatment of ultra - high molecular weight polyethylene fiber has been researched deeper and more extensively in this dissertation

    在處理參數的優化中引入人工神經網路技術，主要完成了以下幾個方面的工作： 1 ）論述了低溫等離子體在復合材料表面處理上的應用原理及參數對處理的影響。
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