high-temperature spectra 中文意思是什麼

high-temperature spectra 解釋
高溫譜
  • high : adj 1 高的〈指物，形容人的身高用 tall〉；高處的；高地的。2 高級的，高等的，高位的，重要的。3 高尚...
  • temperature : n. 1. 溫度，氣溫。2. 體溫。3. 〈口語〉發燒，高燒。
  • spectra : n. spectrum 的復數。
  1. ( 2 ) the emission spectra of laser ablation metal copper plasma were measured. the detailed mechanism of plume emission of cu plasma was qualitatively explained using a simple model based on excitation of atom and ion in plume arising from inelastic collision between the elemental species and electron with high kinetic energy. under the local thermal equilibrium model, the electronic temperature of copper plasma was deduced to be in the 104 scale by its emission lines

    （ 2 ） cu等離子體光譜：在420 570nm波長范圍內觀測了激光燒蝕cu等離子體的光譜和各發射譜線在等離子體中的空間分佈；比較了激光能量對cu等離子體發射光譜、電子溫度的影響；用局部熱力學平衡（ lte ）近似，測得cu等離子體的電子溫度為104k數量級；在不同背景氣壓下，觀測了激光燒蝕cu等離子體光譜的空間分佈。
  2. On the basis of it, - a isotherms were analyzed at different ph 、 temperature 、 molar fraction of mpda and the optimal condition were obtained the preparation of polydiacetylene monolayers and the studies of its spectroscopic properties : the mpda / pda monolayers were irritated by 254nm uv - lamp for 20 seconds and the sensitive monolayers were produced. the uv - vis spectra showed that the recognition between mannose and e. colik12 is specific. the results of the rrs confirmed that the bands of double < wp = 7 > and triple bonds simultaneously shifted toward high wavenumber and its electrical structure of the backbone changed from acetylene to butatriene

    - a曲線的結果表明：雙炔（ pda ）及其甘露糖衍生物（ mpda ）是混溶的。在此基礎之上，我們又對亞相處于不同溫度、不同ph值時和雙炔（ pda ）及其甘露糖衍生物（ mpda ）二者以不同比例混合時的- a曲線進行了詳細的分析，從而確定了雙炔（ pda ）及其甘露糖衍生物（ mpda ）成膜的最佳條件。
  3. We obtained a high quality zno thin film with the pl fwhm of 94 mev at 900. the free exciton binding energy deduced from the temperature - dependent pl spectra is about 59 mev at 900, suggesting that the film quality can be improved by annealing process

    當退火溫度為900時獲得了高質量的氧化鋅薄膜，光致發光譜的半高寬為94mev ，通過變溫實驗得到激子束縛能為59mev ，表明退火過程提高了薄膜的質量。
  4. Using the microwave selective heating property for materials, by setup equivalent equation, and first time inducing the electromagnetic field perturbation theory to the design of heating materials for substrate in mpcvd, three temperature distribution modes were established, including temperature distribution comprehensive mode of inhomogeneous plasma, temperature distribution composite mode of composite substrate materials, temperature distribution perturbation mode of composite materials, which ii provided an whole new technology route to the design of substrate heating system in mpcvd and guided the preparation of heating materials for substrate. and then the heating materials for substrate were designed and optimized to obtain large area homogeneous temperature distribution even larger than substrate holder ' s diameter. as an important part, this thesis researched the nucleation and growth of diamond films in mpcvd, systematically researched the effects of substrate pretreatment, methane concentration, deposition pressure and substrate temperature etc experimental technologic parameters on diamond films " quality on ( 100 ) single crystal silicon substrate in the process of mpcvd, characterized the films qualities in laser raman spectra ( raman ), x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), infrared transmission spectra ( ir ), atomic force microscopy ( afm ), determined the optimum parameters for mpcvd high quality diamond in the mpcvd - 4 mode system

    該系統可通過沉積參數的精確控制，以控制沉積過程，減少金剛石膜生長過程中的缺陷，並採用光纖光譜儀檢測分析等離子體的可見光光譜以監測微波等離體化學氣相沉積過程；利用微波對材料的選擇加熱特性，通過構造等效方程，並首次將電磁場攝動理論引入到mpcvd的基片加熱材料的設計中，建立了非均勻等離子體溫度場綜合模型、復合介質基片材料的復合溫度場模型及復合介質材料溫度場攝動模型，為mpcvd的基片加熱系統設計提供了一條全新的技術路線以指導基片加熱材料的制備，並對基片加熱材料進行了設計和優選，以獲取大面積均勻的溫度場區，甚至獲得大於基片臺尺寸的均勻溫度區；作為研究重點之一，開展了微波等離體化學氣相沉積金剛石的成核與生長研究，系統地研究了在（ 100 ）單晶硅基片上mpcvd沉積金剛石膜的實驗過程中，基片預處理、甲烷濃度、沉積氣壓、基體溫度等不同實驗工藝參數對金剛石薄膜質量的影響，分別用raman光譜、 x射線衍射（ xrd ） 、掃描電鏡（ sem ） 、紅外透射光譜（ ir ） 、原子力顯微鏡（ afm ）對薄膜進行了表徵，確立了該系統上mpcvd金剛石膜的最佳的實驗工藝參數。
  5. As a result 4 the rising annealing temperature induces si02 phase to form, also ivolves the formation of a si phase. in high - temperature - annealed sio ~, films the excess silicon atoms are present as si - si4 tetrahedra, randomly dispersed in the amorphous si02 matrix. photoluminescent spectra were observed for the samples excided by the laser whose wavelength is 365nm. the pl peak is located at about 445nm, which dose n ' t shift as the annealing temperature changes. as the annealing temperature is raised, the luminescent intensity increases. the phenomena suggest that the si - o - si bond as a defect center which is broken down by the stress at the si nc / si02 interface is the primary source of blue luminescence

    這個陡的界面由於明顯的晶格結構的差別而有較大的應力。界面的形成伴隨著界面發光中心的增加，同時pl強度在l戶800有一個大的增強。這個結果提示我們，界面上h 0 s工鍵斷裂形成的nbohc應是藍光發射的主要原因。
  6. In part four, the results of cryogenic raman spectra investigation show temperature dependence of rbm and gm at low temperature is greatly different from at high temperature, and the intensity of most feature is not reversible at low temperature

    在單壁碳納米管的低溫拉曼光譜測量過程中，發現rbm和gm的拉曼頻移在低溫下的溫度效應和在高溫時的溫度效應存在著很大的區別，且特徵峰的強度的變化是不可逆的。
  7. In this paper, the equipment developed in our laboratory for real - time molecular spectra measurement of high - temperature solution is reported

    主要報導自行與製作的高溫實時分子光譜測量裝置。
  8. The third one, we calculated the local facet temperature theoretically and experimentally when ld are operated, the former, we used the henry ' s model, however, the latter, we chose the photoluminescence and raman spectra, finally, we found that accuracy of pl is better than that of raman spectra, however, theoretical results is higher than trial results, but theoretical results accorded with pl when operating current increase. the fourth, electric derivative testing techinque at the constant current ( 500ma ) and temperarure ( 40c ). we study the reliability of ld, and analyzed the reasons, we measured more than the ingaasp high power semiconductor lasers with electric derivative technique, and analyzed the relation between the electric derivative parameters, m, b, h and reliability of devices

    分別從理論上和實驗上計算分析了激光器在工作時腔面的溫度分佈，理論上採用的是henry模型，實驗上通過光致發光和拉曼光譜法測試了激光器在工作時的腔面溫度分佈；結果表明光致發光法測量的較為準確，拉曼光譜法測量的值偏大，由於我們對理論模型做了一定的近似，理論結果偏大，但理論值在大注入時和光致發光法符合的較好，由此可見光致發光法對研究腔面的溫度有更大的優越性。
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