high-temperature test chamber 中文意思是什麼

high-temperature test chamber 解釋
高溫試驗箱
  • high : adj 1 高的〈指物，形容人的身高用 tall〉；高處的；高地的。2 高級的，高等的，高位的，重要的。3 高尚...
  • temperature : n. 1. 溫度，氣溫。2. 體溫。3. 〈口語〉發燒，高燒。
  • test : n 1 檢驗，檢查；考查；測驗；考試；考驗。2 檢驗用品；試金石；【化學】試藥；（判斷的）標準。3 【化...
  • chamber : n 1 〈古、詩〉室，房間；寢室，臥室；〈pl 〉套房；〈pl 〉律師[法官]辦公室。2 會議室，會場；議會，...
  1. There are over 80 sets test apparatus in tech - innovation centre, including : anechoic chamber, vibration tester, vibration measurement analysis, impact instrument, constant temperature and humidity facilities. salt spary test case, circle insulation withstand voltage tester, insulation resistance tester, withstand voltage tester, electric lead tester, electrical leakage tester, earth resistance tester, chassis dynamometer, chassis dynamometer control system, high stability dc resistance tester, electrical capacity tester, temperature rise test system

    中心擁有各類分析測試儀器和試驗裝置80餘臺套，包括：消音室振動臺噪聲振動測試分析系統沖擊儀恆溫恆濕實驗儀鹽霧試驗箱匝間耐壓分析儀絕緣電阻分析儀對地耐壓分析儀泄露電流測試儀對地電阻測試儀測功機測功機控制系統高精度直流電阻測試儀電參數測試儀帶電溫升測試儀復合式三坐標測量儀萬分投影儀及電功測試分析系統等。
  2. High temperature test chamber

    高溫試驗箱
  3. The basic signals in the projectile test are dynamic signals such as high initial speed, high chamber pressure, high frequency response, high impact, high temperature measurand. so, the test and measurement system should have more channels, the signals are easy to be obtained, and no matter the measurand it is, the test and measurement plateau should be integrated instantly

    彈丸測試的基本信號是高初速、高膛壓、高頻響、高過載、高沖擊、高溫等諸多動態量的信號，這要求測試系統通道多、捕捉動態信號容易、搭建針對不同被測信號的測試平臺快捷。
  4. The best process for high quality tio _ ( 2 ) thin film deposited on k9 glass by reb is studied by using orthogonal test method, the se results indicate that the best process for tio _ ( 2 ) thin film deposition is the substrate temperature of 300, the total gas press in the chamber of 2 x 10 ~ 2pa and the deposition rate of 0. 2 nm - s - 1, of which the substrate temperature has influence on the optical properties of the deposited films notably

    文中首先以tio _ 2薄膜的折射率和消光系數為研究對象，採用l9正交試驗法研究了在k9玻璃上制備高光學質量tio _ 2薄膜的最佳工藝條件。橢圓偏振儀的測試結果表明，制備tio _ 2薄膜的最佳工藝條件為：基片溫度300 ，工作真空2 10 ~ （ - 2 ） pa ，沉積速率0 . 2nm ? s ~ （ - 1 ） ，其中基片溫度對薄膜光學常數的影響最大，該結果具有較好的可重現性。
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