homogeneous x-ray 中文意思是什麼

homogeneous x-ray 解釋
單色x射線
  • homogeneous : adj. 1. 同種的,同質的,同性的,相似的。2. 純一的,均質的;均勻的。3. 【數學】齊性的,齊次的。adv. -ly ,-ness n.
  • x : X2= (羅馬數字)10 XX = 20 IX = 9 XV = 15 XL = 40 LX = 60 XC = 90 DXL = 540 MX = 1010 =...
  • ray : n 雷〈姓氏,男子名, Raymond 的昵稱〉。n 1 光線,射線,熱線;〈詩〉光輝,閃爍,曙光,一線光明。2 ...
  1. Using the microwave selective heating property for materials, by setup equivalent equation, and first time inducing the electromagnetic field perturbation theory to the design of heating materials for substrate in mpcvd, three temperature distribution modes were established, including temperature distribution comprehensive mode of inhomogeneous plasma, temperature distribution composite mode of composite substrate materials, temperature distribution perturbation mode of composite materials, which ii provided an whole new technology route to the design of substrate heating system in mpcvd and guided the preparation of heating materials for substrate. and then the heating materials for substrate were designed and optimized to obtain large area homogeneous temperature distribution even larger than substrate holder ' s diameter. as an important part, this thesis researched the nucleation and growth of diamond films in mpcvd, systematically researched the effects of substrate pretreatment, methane concentration, deposition pressure and substrate temperature etc experimental technologic parameters on diamond films " quality on ( 100 ) single crystal silicon substrate in the process of mpcvd, characterized the films qualities in laser raman spectra ( raman ), x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), infrared transmission spectra ( ir ), atomic force microscopy ( afm ), determined the optimum parameters for mpcvd high quality diamond in the mpcvd - 4 mode system

    該系統可通過沉積參數的精確控制,以控制沉積過程,減少金剛石膜生長過程中的缺陷,並採用光纖光譜儀檢測分析等離子體的可見光光譜以監測微波等離體化學氣相沉積過程;利用微波對材料的選擇加熱特性,通過構造等效方程,並首次將電磁場攝動理論引入到mpcvd的基片加熱材料的設計中,建立了非均勻等離子體溫度場綜合模型、復合介質基片材料的復合溫度場模型及復合介質材料溫度場攝動模型,為mpcvd的基片加熱系統設計提供了一條全新的技術路線以指導基片加熱材料的制備,並對基片加熱材料進行了設計和優選,以獲取大面積均勻的溫度場區,甚至獲得大於基片臺尺寸的均勻溫度區;作為研究重點之一,開展了微波等離體化學氣相沉積金剛石的成核與生長研究,系統地研究了在( 100 )單晶硅基片上mpcvd沉積金剛石膜的實驗過程中,基片預處理、甲烷濃度、沉積氣壓、基體溫度等不同實驗工藝參數對金剛石薄膜質量的影響,分別用raman光譜、 x射線衍射( xrd ) 、掃描電鏡( sem ) 、紅外透射光譜( ir ) 、原子力顯微鏡( afm )對薄膜進行了表徵,確立了該系統上mpcvd金剛石膜的最佳的實驗工藝參數。
  2. Surface chemical analysis - auger electron spectroscopy and x - ray photoelectron spectroscopy - guide to the use of experimentally determined relative sensitivity factors for the quantitative analysis of homogeneous materials

    表面化學分析.俄歇電子光譜法和x射線光電子光譜法.同質材料定量分析用實驗室測定相對敏感性系數的使用指南
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