implantation materials 中文意思是什麼
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Plasma immersion ion implantation into insulating materials
等離子體浸沒離子注入絕緣材料的研究 -
In the current experimental parameter range, thin and / or ultra - thin soi with thickness of 50 - 150nm and box of 70 - 180nm thick were obtained. compared to the conventional simox - soi, the soi materials manufactured by water plasma ion implantation at the same implantation dosage and ion energy have much thicker box layers
本論文一個重要發現是以水等離子體離子注入方式所形成埋層sio _ 2厚度得到了大幅度的展寬，相比傳統simox法，其展寬幅度高達50 ，這一重要發現為降低注入時間和soi制備成本提供了有效的途徑。 -
In the present work, water plasma ion implantation, instead of the conventional oxygen plasma ion implantation, has been employed to fabricate soi materials. the masses of the three dominant ion species in the water vapor plasma, h2o +, ho +, and o +, are very close to each other, which overcome the problem of co - existence of o and 02 in oxygen plasma source. the oxygen depth profiles in the water plasma ion as - implanted silicon do not disperse much, which makes it possible for the formation of single buried oxide ( box ) layer by choosing appropriate implantation energy and dose
本論文創造性地採用水等離子體離子注入方式代替傳統的氧離子注入方式來制備soi結構材料，由於水等離子體中的三種離子h _ 2o ~ + 、 ho ~ +和o ~ +質量數相差很小，克服了氧等離子體中因o _ 2 ~ +和o ~ +質量數相差大而引起的氧在硅中的分佈彌散，使注入硅后的氧射程分佈相對集中，比較容易退火后形成soi結構材料。 -
Plasma implantation deposition on the surfaces of the non - conductive materials
非導電材料表面等離子體注塗技術 -
An ion implanter without ion mass analyzer was applied to simulate the phi procedure to fabricate soi materials by implantation of water plasma ions. thin soi structure was successfully fabricated by the implanter using 50 ~ 90kev water plasma ion implantation with the dose ranging from 2 - 6. 5 + 017cm - 2 and, subsequently, the high temperature annealing
我們使用無質量分析器的離子注入機，模擬等離子體離子注入過程，成功地在該注入機上用水等離子體離子注入制備出了界面陡峭、平整，表層硅單晶質量好，埋層厚度均勻的薄型soi材料。 -
Effects of si ion implantation on the total - dose radiation properties of simox soi materials
材料抗總劑量輻照性能的影響
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