impurity defect 中文意思是什麼
impurity defect
解釋
雜質缺陷-
The major research interest covers a broad range of topics concerned with the fundamental properties of shallow - levels in semiconductors and with impurity related issues of importance to semiconductor physics and technology, e. g., single and multiple donors and acceptors, shallow excited states of deep - level impurities, defect interaction on the atomic scale such as impurity - pair or complex formation
主要研究方向涵括半導體物理與技術方面有關雜質之重要領域，例如施者與受者雜質、淺與深雜質、雜質能階、雜質光譜、雜質與雜質或缺陷相互間之交互作用，以及復合雜質之形成與特性等。 -
Point defect - a crystal defect that is an impurity, such as a lattice vacancy or an interstitial atom
點缺陷-不純凈的晶缺陷，例如格子空缺或原子空隙。 -
However, all of them had the same insuperable problem that the epitaxy of gan thin film had to be happened in high temperature no less than 1000 c. as a result, impurity as well as structure defect will be induced
上述方法均面臨一個問題，那就是gan薄膜的生長要在約1000的溫度下進行，其結果是造成晶格結構缺陷的產生。 -
By means of chemical etching, microscope observation, eelectron probe x - ray micro - analyzer ( epma ), the micro - distribution of c acceptor defect in lec si - gaas wafer is investigated, the results show that there is serious influence of the density and distribution of dislocations on the distribution of c impurity in wafer
本文通過ab腐蝕、 koh腐蝕，金相顯微鏡觀察，透射電鏡能譜分析，電子探針x射線微區分析，研究了液封直拉法生長的非摻半絕緣砷化鎵（ lec ， si - gaas ）單晶中碳的微區分佈。 -
The defect and interface in sapphire and gan were observed by afm. we found that when the dislocation density in sapphire was lower thanl05 / cm2, the dislocation density in gan was 108 ~ 109 / cm2and not linear with the dislocation in sapphire. the impurity of mo in sapphire and gan was measured by sem xps epma and uvf we found the mo content in sapphire was 10 - 4, and the mo content in gan was lower than ppm. so it was concluded that low - cost mo crucible is viable
用掃描電鏡（ sem ） 、 xps 、電子探針和紫外熒光光譜儀測量了藍寶石襯底和gan外延層中的mo雜質的含量，發現藍寶石襯底中含有mo雜質，含量約為10 ~ （ - 4 ） （質量含量） ；而在外延層gan中沒有檢測到mo雜質，即mo雜質含量小於ppm級。 -
There is also energy band structure for photons in photonic crystal, which is similar as that for electrons in natural crystal ( electronic crysta1 ). localized state will ap - pear if there is an impurity or defect
光子晶體中的光子與一般晶體（電子晶體）中的電子相似，都有能帶結構，都會因為有雜質和缺陷態的存在而存在局域態。
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