impurity diffusion 中文意思是什麼
impurity diffusion
解釋
雜質擴散-
At the initial stage of planar technique, b was employed as ideal diffusion impurity in base - region of npn si planar devices because of the match of its solid - solubility and diffusion coefficient in si with those of p in emission - region, and the good shield effect of sio2 film to b. but because of the relatively large solubility ( 5 1020 / cm3 at 1000 ) and the small diffusion coefficient, the linear slowly - changed distribution of acceptor b in pn junction can not be formed, which could not cater to the requirement of high - reversal - voltage devics. thereafter b - a1 paste - layer diffusion technology and close - tube ga - diffusion technology had been developed, while the former can lead to relatively large the base - region deviation and abruptly varied region in si, which caused severe decentralization of current amplification parameter, bad thermal stability and high tr ; the latter needed the relatively difficult pack technique, with poor repeatability, high rejection ratio, and poor diffusion quality and productio n efficiency
在平面工藝初期，由於b在硅中的固溶度、擴散系數與n型發射區的磷相匹配， sio _ 2對其又有良好的掩蔽作用，早被選為npn硅平面器件的理想基區擴散源，但b在硅中的固溶度大（ 1000時達到5 10 ~ （ 20 ） ，擴散系數小， b在硅中的雜質分佈不易形成pn結中雜質的線性緩變分佈，導致器件不能滿足高反壓的要求，隨之又出現了硼鋁塗層擴散工藝和閉管擴鎵工藝，前者會引起較大的基區偏差，雜質在硅內存在突變區域，導致放大系數分散嚴重，下降時間t _ f值較高，熱穩定性差；後者需要難度較大的真空封管技術，工藝重復性差，報廢率高，在擴散質量、生產效率諸方面均不能令人滿意。 -
The performance of devices is directly decided by the impurity distribution in the diffused region, and the impurity distribution may be affected by the material thermal properties, the mechanism of diffusion, the power of laser and the diffusion time
激光誘導擴散過程中，基片的熱物理特性、擴散源的擴散機理、激光束的功率大小和擴散時間以及光束的聚焦狀況等等，都會對擴散結果產生重要的影響，而擴散層的雜質分佈情況將直接決定器件的性能指標。 -
At present, the problem in testing sheet resistance for micro - areas is that probes must be set up at the suitable locations by handwork. in order to know the wafer ' s impurity distributing, we need test many times, so will waste a lot of time. if the wafer ' s diameter would be 300mm, this problem will be more serious. in this paper, image analysis is introduced, through pre - processing and edge picking - up, the probe tips are recognized. then probe tips will be aligned respectively in two perpendicular directions through driving stepper motors. thus the distribution of sheet resistance for whole wafer is got by automatic testing and it offers information for detecting the impurity distribution and the diffusion uniformity
這樣，完成200mm （ 8時）圓片雜質的擴散分佈需要對許多圖形進行測試，需要花費很長的時間，當測試300mm矽片時問題就更為突出。本文將圖象與視覺測量系統引入四探針測試系統中，對採集到的原始探針圖像進行預處理、邊緣提取等操作，以便實現探針針尖的識別，然後由電機控制實現探針的自動定位。這樣測試系統可以自動獲得全片的薄層電阻分佈，為超大規模集成電路檢測雜質分佈和擴散的均勻性提供信息。
分享友人