impurity distribution 中文意思是什麼

impurity distribution 解釋
雜質分佈
  • impurity : n. 〈常用 pl. 〉1. 不純，不潔。2. 下流，不道德，不貞節，雜質。
  • distribution : n 1 分配，分發，配給；分配裝置[系統]；配給品；配給量；【經濟學】配給方法，配給過程；分紅；【法律...
  1. From then on, the above two shortcomings had been overcome. impurity concentration and junction depth can be accurately controlled and freely adjusted. both low and high dopant concentration can be gained easily, and ideal distribution of ga in si can also be achieved with uniform surface concentration, good repeatability and high eligibility and excellence ratio, which have greatly improved comprehensive performances of the devices

    此工藝發明以來，克服了上述兩者的弊端，雜質濃度和結深能準確控制而又能任意調整，可進行低、高濃度階段性摻雜，得到元素ga在si中的理想分佈，而且表面濃度均勻一致、重復性好、合格率和優品率高，改善和提高了器件的綜合性能。
  2. At the initial stage of planar technique, b was employed as ideal diffusion impurity in base - region of npn si planar devices because of the match of its solid - solubility and diffusion coefficient in si with those of p in emission - region, and the good shield effect of sio2 film to b. but because of the relatively large solubility ( 5 1020 / cm3 at 1000 ) and the small diffusion coefficient, the linear slowly - changed distribution of acceptor b in pn junction can not be formed, which could not cater to the requirement of high - reversal - voltage devics. thereafter b - a1 paste - layer diffusion technology and close - tube ga - diffusion technology had been developed, while the former can lead to relatively large the base - region deviation and abruptly varied region in si, which caused severe decentralization of current amplification parameter, bad thermal stability and high tr ; the latter needed the relatively difficult pack technique, with poor repeatability, high rejection ratio, and poor diffusion quality and productio n efficiency

    在平面工藝初期，由於b在硅中的固溶度、擴散系數與n型發射區的磷相匹配， sio _ 2對其又有良好的掩蔽作用，早被選為npn硅平面器件的理想基區擴散源，但b在硅中的固溶度大（ 1000時達到5 10 ~ （ 20 ） ，擴散系數小， b在硅中的雜質分佈不易形成pn結中雜質的線性緩變分佈，導致器件不能滿足高反壓的要求，隨之又出現了硼鋁塗層擴散工藝和閉管擴鎵工藝，前者會引起較大的基區偏差，雜質在硅內存在突變區域，導致放大系數分散嚴重，下降時間t _ f值較高，熱穩定性差；後者需要難度較大的真空封管技術，工藝重復性差，報廢率高，在擴散質量、生產效率諸方面均不能令人滿意。
  3. The current distribution around a single impurity in a planar quantum wires is studied in this paper

    摘要微小器件內雜質原子的存在是影響電流分佈的主要因素之一。
  4. We also inspect the influences for both the width of strap and the position of the impurity, on the current distribution

    本文還研究了波導寬度以及雜質原子的位置對電流分佈的影響。
  5. By means of chemical etching, microscope observation, eelectron probe x - ray micro - analyzer ( epma ), the micro - distribution of c acceptor defect in lec si - gaas wafer is investigated, the results show that there is serious influence of the density and distribution of dislocations on the distribution of c impurity in wafer

    本文通過ab腐蝕、 koh腐蝕，金相顯微鏡觀察，透射電鏡能譜分析，電子探針x射線微區分析，研究了液封直拉法生長的非摻半絕緣砷化鎵（ lec ， si - gaas ）單晶中碳的微區分佈。
  6. Base on failure analysis and stress distribution analysis of the stuffing box using the lame formula and software ansys in predigested model, it is found that the composition of the material accorded with the requirement for stuffing box, and the microstructure with few impurity was qualified

    摘要對產生裂紋的填料盤進行了失效分析，通過拉梅公式和有限元分析軟體對填料盤簡化模型進行了受力分析。
  7. Damage annealing and impurity density distribution of as n2 co - implantation si

    的損傷退火及雜質濃度分佈
  8. Thus it is a conclusion that the cellular structure is the main reason that causes the inhomogeneous distribution of c impurity, and we also analysis theoretically the mechanism of the inhomogeneous distribution of c and the impact on material electricity characteristic

    因此，本文認為si - gaas中胞狀結構是引起碳不均勻分佈的主要原因，本文還研究了造成這種不均勻分佈的機理，及對材料電學特性的影響。
  9. Study on the influence of grading and impurity distribution for the properties of phosphogysum

    雜質分佈對其性能影響的研究
  10. The performance of devices is directly decided by the impurity distribution in the diffused region, and the impurity distribution may be affected by the material thermal properties, the mechanism of diffusion, the power of laser and the diffusion time

    激光誘導擴散過程中，基片的熱物理特性、擴散源的擴散機理、激光束的功率大小和擴散時間以及光束的聚焦狀況等等，都會對擴散結果產生重要的影響，而擴散層的雜質分佈情況將直接決定器件的性能指標。
  11. At present, the problem in testing sheet resistance for micro - areas is that probes must be set up at the suitable locations by handwork. in order to know the wafer ' s impurity distributing, we need test many times, so will waste a lot of time. if the wafer ' s diameter would be 300mm, this problem will be more serious. in this paper, image analysis is introduced, through pre - processing and edge picking - up, the probe tips are recognized. then probe tips will be aligned respectively in two perpendicular directions through driving stepper motors. thus the distribution of sheet resistance for whole wafer is got by automatic testing and it offers information for detecting the impurity distribution and the diffusion uniformity

    這樣，完成200mm （ 8時）圓片雜質的擴散分佈需要對許多圖形進行測試，需要花費很長的時間，當測試300mm矽片時問題就更為突出。本文將圖象與視覺測量系統引入四探針測試系統中，對採集到的原始探針圖像進行預處理、邊緣提取等操作，以便實現探針針尖的識別，然後由電機控制實現探針的自動定位。這樣測試系統可以自動獲得全片的薄層電阻分佈，為超大規模集成電路檢測雜質分佈和擴散的均勻性提供信息。
  12. Equipment with are made of stainless steel could mill the materials whose request of impurity content is high or sensitive to iron, meanwhile could meet the particles size and size distribution

    全不銹鋼型能超細加工那些對雜質含量要求極細的物料或對鐵質極其敏感的物料，同時能滿足粒度和粒度分佈的要求。
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