impurity state 中文意思是什麼
impurity state
解釋
雜質態-
Then, author regard that there exists the unaccomplished act in purity state and no such state crime, while exists in impurity state
關于繼續犯的停止形態，作者認為純粹型繼續犯無未遂犯，不純粹型繼續犯存在未遂犯。 -
The theoretic cycle capacity of limno2 is 286 mah g - 1, which has attracted a great deal of people to research. aim at the impurity of limno2 which was synthesized by the predecessor and the phase change during the electrochemical process, we try several methods, including wet moist chemical method, liquid state method, solide state method and liquid dipping method. at the same time, we study the synthesis of limnc > 2 in defferent atmosphere, for example air, argon and nitrogen
Limno _ 2具有286mah ? g ~ （ - 1 ）的理論容量，這種高容量材料深受廣大研究者的關注，針對前人合成出的還有少量雜相和在電化學循環過程中出現相變四川人學碩l :學位論文的問題，我們嘗試了幾種合成方法:濕化學法、液相法、固相法和溶液浸漬法，並在不同氣氛:空氣、氮氣和氫氣中進行limnoz的合成研究。 -
We creatively apply this way to the bounded polaron in the parabolic quantum well and get the analytical expressions of the ground state energy of an electron bound to a hydrogenic impurity in a parabolic quantum well in an electric field
我們開創性的把它應用到處理有拋物線量子阱中的束縛極化子，得到了有外電場的量子阱中，類氫雜質中的電子基態能量的解析結果。 -
The binding energies and the ground state energies of hydrogen impurity in a lens - shaped quantum dot ( gaas / inl - xgaxas ) under vertical magnetic field using effective mass approximation and variation method have been discussed
利用有效質量近似、變分法，研究了垂直磁場下透鏡型量子點（ gaas / in1 - xgaxas ）摻入類氫雜質后基態能和結合能。 -
Firstly the binding energies and the ground state energies of hydrogen impurity in a lens - shaped quantum dot ( gaas / inl - xgaxas ) under vertical magnetic field will be displayed. then how to use the nuclear spin as the quantum bit will be given
首先研究了垂直磁場下透鏡型量子點（ gaas / in1 - xgaxas ）摻入類氫雜質后基態能和結合能，然後討論了如何利用量子點中雜質核自旋構造量子位。 -
In the past 20 years, impurity state in low dimensional semiconductor structures have been studied extensively. impurites play an important role in the transport properties and optical properties of these structures
自80年代以來，低維半導體材料中雜質態的各種性質引起人們的廣泛關注，雜質對于材料中的電子輸運及光學性質都有重要影響。 -
Because of the great potential of sic mosfets and circuits, in this paper, the characteristics of 6h - sic pmosfets are studied systematically, emphasizing on the effects of interface state and s / d series resistance on sic pmosfets firstly, the crystal structure of silicon carbide, the phenomena of incomplete ionization of the impurity and the fitting formula of hole mobility are presented. the characterization in space - charge region of sic pmos structure is analyzed by solving one dimension poisson equation
研究了sic的晶體結構，分析了sic中雜質的不完全離化現象以及sic中空穴遷移率的擬和公式；用解一維poisson方程的方法分析了sicpmos空間電荷區的電特性；本論文重點分析了界面態分佈和源漏串聯電阻對sicpmos器件特性的影響。 -
It turns out that : ( 1 ) without the magnetic field for a spherical quantum dot, the ground state energy is the same, and has only relations with the distance of the impurity deviation. after applied the vertical magnetic field, the effects of the ground state energies on the deviation of in - plane or perpendicular to the plane are very small, while the effects on the deviation distance are great, the larger the distance, the more ground state energies will be
我們發現： （ 1 ）當球型量子點沒有加垂直磁場的時候，基態能僅與雜質的偏離距離有關，當加上垂直磁場后，雜質水平和垂直偏離相同距離后，基態能差別不大，當偏離距離增加時，基態能增加。 -
There is also energy band structure for photons in photonic crystal, which is similar as that for electrons in natural crystal ( electronic crysta1 ). localized state will ap - pear if there is an impurity or defect
光子晶體中的光子與一般晶體（電子晶體）中的電子相似，都有能帶結構，都會因為有雜質和缺陷態的存在而存在局域態。
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