indium tin oxide 中文意思是什麼

indium tin oxide 解釋
氧化銦錫
  • indium : n. 【化學】銦。
  • tin : n 1 錫。2 鍍錫薄鋼板,馬口鐵,白鐵。3 錫器;罐頭;(容量)〈英國〉一罐[聽] (=〈美國〉 can)。4 ...
  • oxide : n. 【化學】氧化物。 antimony oxide 銻白,氧化銻。 deuterium oxide 重水,氧化氘。 mercuric oxide 氧化汞。 nitric oxide 一氧化一氮。
  1. A study of indium doped tin oxide as electrode of ferroelectric films

    用作鐵電薄膜電極的研究
  2. Azo ( aluminums zinc oxide films ) which have many characteristics such as high ratio of performance to price and innoxious are the replacer of ito ( indium tin oxide films )

    摻鋁的氧化鋅薄膜( azo )具有性價比高、無污染等特點,是摻錫氧化銦( ito )的最佳替代產品。
  3. Nano indium, tin oxide etc. particles / polymer composite was studied. high transparence and electromagnetic shielded efficiency are asked. the transparency of organic glass is good, but it is nonconductor and has no shielded efficiency

    大課題採取無機-高分子納米復合技術路線,研製氧化銦、氧化錫等金屬氧化物納米粒子丙烯酸酯類聚合物納米復合材料,要求高透光、高電磁屏蔽。
  4. The chief results and conclusion thus arrived at are as folloes : ( 1 ) the morphology and electrical properties of indium - tin - oxide ( ito ) films which were treated respectively by ethanol, naoh, sulfuric and oxygen plasma, were studied from microscopic view by atomic force microscopy, x - ray photoelectron spectroscopy and goniometer

    ( 1 )利用原子力顯微鏡、接觸角測試儀、紫外分光光度計從微觀角度研究了乙醇、氫氧化鈉、濃硫酸、氧等離子體處理對ito薄膜的表面性能和光電性能的影響。
  5. Antimony doped tin oxide ( ato ) and indium tin oxide ( ito ) thin films have been prepared by a sol - gel process using inorganic metal salts as precursors. the effects of heat - treatment atmosphere, temperature, time and dopant content on the electrical and optical properties of thin films were investigated. the fine patternings of the ato films were fabricated by chemical modification and sol - gel method

    本文以無機鹽為出發原料,採用溶膠?凝膠法制備了光學和電學性能較為優良的摻銻二氧化錫( ato )薄膜和摻錫氧化銦( ito )薄膜,進一步研究了熱處理氣氛、溫度、時間、摻雜量對薄膜電學及光學性能的影響。
  6. Indium - tin oxide ito

    銦錫氧化玻璃
  7. Indium tin oxide

    銦錫氧化物
  8. The main transparent conductive oxide include indium tin oxide ( ito ), al - doped zno ( azo ), tin antimony oxide ( ato ) etc. ito is important material of making the transparent electrode

    目前應用廣泛的透明導電氧化物薄膜主要有氧化銦錫薄膜( ito ) 、氧化鋅鋁膜( azo ) 、摻銻氧化錫( ato )等。銦錫氧化物( ito )是製造透明電極的重要材料。
  9. Because of better conductivity, higher transparency, smoother surface and higher work function, ito ( indium tin oxide ) films are used as the transparent electrodes which are the emitting side in oled

    Oled顯示器件經常採用ito膜作為有機發光的出射面和透明電極,要求ito膜可見光透過率、導電性、表面平整度以及功函數都很好。
  10. Deposition of additional thin layers of indium tin oxide and other compounds next to the electrodes altered the interaction of the thicker layers and also improved the efficiency of the injection of holes and electrons, thereby further upping the overall power efficiency of the fluorescent oled

    將薄層氧化銦錫及其他化合物附置在電極旁,可以改變厚層間的交互作用,並改善電洞及電子的注入效率,因而可以進一步增加螢光oled的整體用電效率。
  11. The transparent conductive glass with indium - tin oxide films used in liquid crystal display

    液晶顯示器用氧化銦錫透明導電玻璃
  12. According to the idea of strategic design, the writer discusses in detail the opportunity of zhuye group to invest ito ( indium tin oxide ) target material product, designs a comparative invest strategy for ito target material product, and makes the financial analysis and the overall evaluation for the invest strategy

    本文按照戰略設計的思想,對株冶集團銦靶材產品投資機會進行了詳細的分析,設計出較為系統的投資戰略,再對其進行了財務分析和綜合評價。在對具體案例的解析過程中,闡述了本人對產品投資戰略設計及其評價的理解。
  13. But the composite must have enough pervious light gap between conducting particles, or the particle size is less than the wavelength of visible light. so preparation of indium, tin oxide ( in2o3 / sno2 ) nano powders by promising method of sol - gel in liquid and surface modification were studied. we hope to summarize general nano preparation, modification and characterization methods

    所以本研究的目的是利用液相法中較有前途的溶膠-凝膠法制備氧化銦、氧化錫及其復合氧化物( in _ 2o _ 3 sno _ 2 )納米粉料,並對其進行表面修飾和綜合表徵,為大課題提供原材料並可望總結出普遍可行的納米粒子制備、修飾及表徵方法。
  14. It has been found that porous silicon particles drift inversely in the external electric field and adhere to the surface of positive electrodes, such as pt, p + - si, indium - tin oxide ( ito ) coated glass etc. there is a linear relationship between the photoluminescence ( pl ) intensity and the ps concentration of the suspension

    將ps懸浮於乙醇中配製成懸浮體系,用己附著的鋅片作正極,鋅片作負極,在電場強度為300v cm時電泳15min ;多孔硅被電泳到zno表面構成zn zno個s電極。
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