interface defect 中文意思是什麼
interface defect
解釋
面缺陷-
Density of composites was varied with the amount of organic and grain size of ultramicro iron. influence of microstructure on and was discussed with the interface defect mechanism
指出了復合粒子密度的變化是由於有機相含量與超微鐵粒徑的變化引起的，並用界面缺陷的理論探討了微觀結構對與的影響。 -
The results show that, composite could be fabricated on the complicated surface by means of sodium silicate sand mold combination with vacuum infiltration process. when the substrate was 10 mm, composite layers reached 3 mm to 5 mm in thickness with high strength interface and less casting defect. microstructures of grey cast iron and low chromium cast iron matrix composites with various volume fraction has been analyzed
結果表明：用水玻璃砂型（芯）加負壓鑄滲的工藝能夠實現復雜表面（曲面）顆粒增強復合材料的制備，澆注方式簡單可靠，基材厚度在10mm時，復合層厚度能達到3 5mm ，且復合層鑄造缺陷少，復合效果好，界面緻密而且結合強度高。 -
Moreover, the investigation for the ma of cu - cr indicates that : with using of protective atmosphere, active carbon has a good effect on the oxidation control during milling ; the structure refining and increasing of interface and defect result in the formation of non - equilibrium phase
此外，對cu - cr難互溶體系的ma研究表明：粉末的結構細化及界面、缺陷的產生導致了ma過程中亞穩相（氧化物非晶、過飽和固溶體）的轉變與形成；與保護性氣氛相比較，活性炭對ma過程中的氧化現象有良好的控製作用。 -
The surface of ce02 - ti02 films were very smooth and difficulty to crystallization. the ceo2 - tio2 complex films were nanocrystalline microstructure or microcrystalline even if to heat the substrates or to anneal the films. the ceo2 and tio2 nanocrystalline were not easy congregate and bigger because of heterogeneity interface disturb and have many defect
組成ceo _ 2 - tio _ 2混合薄膜顆粒粒徑在納米尺度范圍3 ? 50nm ，與純ceo _ 2 、 tio _ 2薄膜相比，具有更小的表面粗糙度和更難結晶，這是由於異質材料晶界的相互干擾，使同質顆粒之間難于聚集而結晶長大，薄膜處于納米晶或雛晶態，即使加熱基片或薄膜進行熱處理也無明顯變化。 -
The defect and interface in sapphire and gan were observed by afm. we found that when the dislocation density in sapphire was lower thanl05 / cm2, the dislocation density in gan was 108 ~ 109 / cm2and not linear with the dislocation in sapphire. the impurity of mo in sapphire and gan was measured by sem xps epma and uvf we found the mo content in sapphire was 10 - 4, and the mo content in gan was lower than ppm. so it was concluded that low - cost mo crucible is viable
用掃描電鏡（ sem ） 、 xps 、電子探針和紫外熒光光譜儀測量了藍寶石襯底和gan外延層中的mo雜質的含量，發現藍寶石襯底中含有mo雜質，含量約為10 ~ （ - 4 ） （質量含量） ；而在外延層gan中沒有檢測到mo雜質，即mo雜質含量小於ppm級。 -
As a result 4 the rising annealing temperature induces si02 phase to form, also ivolves the formation of a si phase. in high - temperature - annealed sio ~, films the excess silicon atoms are present as si - si4 tetrahedra, randomly dispersed in the amorphous si02 matrix. photoluminescent spectra were observed for the samples excided by the laser whose wavelength is 365nm. the pl peak is located at about 445nm, which dose n ' t shift as the annealing temperature changes. as the annealing temperature is raised, the luminescent intensity increases. the phenomena suggest that the si - o - si bond as a defect center which is broken down by the stress at the si nc / si02 interface is the primary source of blue luminescence
這個陡的界面由於明顯的晶格結構的差別而有較大的應力。界面的形成伴隨著界面發光中心的增加，同時pl強度在l戶800有一個大的增強。這個結果提示我們，界面上h 0 s工鍵斷裂形成的nbohc應是藍光發射的主要原因。
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