interfacial diffusion 中文意思是什麼

interfacial diffusion 解釋
界面擴散
  • interfacial : adj. 1. 界面的，面際的。2. 界面角的。
  • diffusion : n. 1. 散布，發散。2. 傳播，普及。3. 冗長。4. 【化學】滲濾。5. 【物理學】擴散，漫射。
  1. Interfacial atoms diffusion or covalence by a circulated - argon ion bombardment process could improve the adhesion strength between the coatings and the uranium substrate

    循環氬離子轟擊鍍方法可促進使膜-基界面原子間的擴散或鍵合，有利於提高膜-基結合強度。
  2. Generally, the membrane thickness is much larger than the pore dimension. therefore, the resistance of the pore channel was the control resistance of the membrane diffusion process. while the existences of the stephen diffusion and pore interaction well explained the reason why the total membrane surface would be used as the interfacial area through where the mass transport took place

    盡管由於膜的厚度比孔的尺寸要大很多， stephen擴散以及孔之間的相互作用對通過膜的總擴散阻力影響很小，但它們存在的結果是使整個膜表面的氣體濃度趨於一致。
  3. The effects of interfacial resistance, superheating, free convection due to both temperature and concentration gradients, mass diffusion and thermal diffusion, and variable properties in both the liquid and gas - vapor regions were considered

    分析中，考慮了相間阻力、液膜波動、蒸汽過熱度、因溫度和濃度梯度引起的自然對流、質擴散和熱擴散以及物性的變化。
  4. The interfacial microstructure and properties for ti ni in diffusion bonding process

    擴散焊接界面的組織和性能
  5. It was found that the interfacial bonding of 93w - ofc was both the joining action of ofc / w grains and that of ofc / ni - fe binders, whereas the joining of ofc to tc4 could be seen as the mutual intense diffusion effect between ofc / tc4 and as a result cu - ti intermetallic compounds were formed at the joint. the joining of tc4 - a1 and a1 - mb2 were also attributed to the result of diffusion between elements ti - al and al - mg respectively. on the other hand, residual thermal stress and stress - induced distortion were produced at the joint simultaneously due to the difference in thermal expansion coefficient of different welding " materials

    研究表明， 93w與ofc的界面連接是ofc與93w中w晶粒的連接以及ofc與93w中ni - fe粘接劑的連接共同作用的結果； ofc與tc _ 4連接界面的形成是由於ofc與tc _ 4之間發生反應擴散，並由此在二者接頭處生成了cu - ti金屬間化合物的中間相； tc _ 4 - al的連接與al - mb _ 2的連接則分別是其基體元素ti 、 al之間和al 、 mg之間元素互擴散的結果，另外，由於熱膨脹系數的差異，擴散焊接后在不同焊件的接頭處存在殘余熱應力並由此引起接頭的形變。
  6. Stress generating mechanisms was discussed. the residual stress of 40 - bilayer mo / si multilayers in a high reflectivity multilayer was - 500 mpa ( compressive ), stress generating cause may be attributed to interfacial diffusion

    重點研究了多層膜的殘余應力控制技術；通過對單層膜以及多層膜的應力狀態分析，得出應力主要是由膜層之間的貫穿擴散引起的。
  7. Therefore, in this paper, the interfacial reactions of sic / ti composites were studied by means of quantum chemistry, thermodynamics, kinetics, diffusion dynamics and experiment

    因此本文運用量子化學、熱力學、動力學、擴散等理論，並採用實驗觀察，對sic ti基復合材料界面反應進行了多方面的研究，揭示了界面反應的本質。
  8. The fracture energy of cu / - aiodiffusion - welded joints was greatly increased by the introduction of the thin film nb interlayer whereas diffusion welding can be performed at a relatively low temperature ( 900 ). the increase in fracture energy of the joints with nb film interlayer was attributed to the strong abhesion of nb to - aio combined with larger plastic deformation in the metal side during fracture tem observations showed large amounts of dislocations existing at the interfacial regions

    本文主要內容就是概括地介紹了國內外關于擴散連接接頭行為數值模擬的發展現狀；主要包括界面孔洞消失過程、接頭元素擴散與反應層的形成、接頭變形與應力行為的數值模擬，以使人們能夠定性或半定量的分析擴散連接因素對接頭性能的影響。
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