intrinsic region 中文意思是什麼

intrinsic region 解釋
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  • intrinsic : adj. (opp. extrinsic)1. 內在的;本來的;真正的,實在的。2. 【解剖學】內部的,體內的。
  • region : n. 1. 地方,地域,地帶;地區;行政區,管轄區,區;左近,鄰近;(大氣、海水等的)層,界,境。2. 【解剖學;動物學】(身體的)局部,部位。3. (學問等的)范圍,領域。4. 〈罕用語〉天空。
  1. This article obtains from the research technology progress to economy rate of rise contribution degree, the use " the charles w. cobo and paul howard douglas production function " and " solow function " unifies the technology progress to the northern tianshan slope economic belt economy rate of rise contribution degree to make the theoretical analysis and the real diagnosis discussion, analyzes this region technology progress development through computation different time technology progress contribution degree the dynamic behavior, through compares each interurban technology progress contribution degree difference condition analysis promotion technology progress level to enhance intrinsic machine - made and the external environment, by tendency angle research technology progress condition and influence factor, thus hinders the northern tianshan slope economic belt technology progress factor, and the ponder countermeasure, accelerates the northern tianshan slope economic belt technology progress, the promotion economy growth provides the reference.

    本文從研究技術進步對經濟增長速度的貢獻度入手,採用「柯布-道格拉斯生產函數」和索洛「增長速度方程」相結合的方法就技術進步對天山北坡經濟帶經濟增長速度的貢獻度做出理論分析和實證探討,通過計算不同時期的技術進步貢獻度來分析本區域技術進步發展的動態行為,通過比較各城市間的技術進步貢獻度差異狀況分析促進技術進步水平提高的內在機制及外在環境,以動態的角度研究技術進步的狀況和影響因素,從而為分析阻礙天山北坡經濟帶技術進步的因素,並思考對策,以期加速天山北坡經濟帶技術進步,促進經濟增長提供參考。
  2. The factors limiting the frequency band of the wide - band amplifier are introduced. through analyzing the effects of the intrinsic parameters and parasitical on the frequency characteristics, a method of improving fr of mosfet by using short channel device and making mosfet work at the saturation region through raising vgs is put forward ; the effects of different kinds of circuit configurations on the frequency characteristics and the junction voltage on the voltage pattern circuit, current pattern circuit and frequency characteristics are analyzed. according to the linear theory of transconductance which is applied in the bit circuit, the current pattern amplifier circuit, current transfer circuit and output circuit which consist of mosfet and the wide - band amplifier composed of them are put forward

    介紹了限制寬帶放大器頻帶寬度的因素,通過分析mosfet的本徵參數、寄生參數對頻率特性的影響,提出了採用短溝器件、使mosfet工作在飽和區、抬高柵源電壓等提高mosfet特徵頻率的方法;分析了不同電路組態對放大器頻率特性的影響、節點電壓對電壓模電路、電流模電路頻率特性的不同影響,根據應用於雙極晶體管電路的跨導線性原理,提出了採用mosfet構成的電流模放大電路、電流傳輸電路、輸出電路以及由它們所組成的寬帶放大器,獲得了良好的頻率響應。
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